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TK10P60W-VB Product details
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Product Introduction
**TK10P60W-VB** is an **N-Channel MOSFET**, using **TO252 package**, designed for high-voltage switching applications, with **650V** maximum drain-source voltage (VDS) and **11A** maximum drain current (ID). This MOSFET uses advanced **SJ_Multi-EPI technology**, providing a lower on-resistance (RDS(ON)), and its on-resistance is **370mΩ** at **VGS = 10V**, which makes it exhibit excellent switching performance and power efficiency in high-voltage and medium-current applications. **TK10P60W-VB** is mainly used in high-power and high-voltage power switches, inverters and other occasions requiring high current control.
With its **650V** voltage rating and **11A** current capability, this MOSFET can be widely used in **power management, industrial control, automotive electronics** and **motor drive systems**, especially in applications that require efficient current switching.
**TK10P60W-VB** is an **N-Channel MOSFET**, using **TO252 package**, designed for high-voltage switching applications, with **650V** maximum drain-source voltage (VDS) and **11A** maximum drain current (ID). This MOSFET uses advanced **SJ_Multi-EPI technology**, providing a lower on-resistance (RDS(ON)), and its on-resistance is **370mΩ** at **VGS = 10V**, which makes it exhibit excellent switching performance and power efficiency in high-voltage and medium-current applications. **TK10P60W-VB** is mainly used in high-power and high-voltage power switches, inverters and other occasions requiring high current control.
With its **650V** voltage rating and **11A** current capability, this MOSFET can be widely used in **power management, industrial control, automotive electronics** and **motor drive systems**, especially in applications that require efficient current switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: TK10P60W-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **370mΩ** @ **VGS = 10V**
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: External heat dissipation design is usually required to ensure that the operating temperature is controlled within a safe range.
- **Model**: TK10P60W-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **370mΩ** @ **VGS = 10V**
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Maximum power consumption**: External heat dissipation design is usually required to ensure that the operating temperature is controlled within a safe range.
Domain and module applications：
Application fields and module examples
1. **Switching power supply (SMPS)**:
**TK10P60W-VB** is a high voltage **N-Channel MOSFET**, which is very suitable for **switching power supply (SMPS)**. Its **650V** voltage tolerance and **370mΩ** low on-resistance can effectively reduce power loss during switching and improve conversion efficiency. This MOSFET is suitable for **AC-DC power adapters, DC-DC converters (DC-DC Converters)**, and **high-efficiency power management systems**, which can provide stable power output and maintain low energy loss.
2. **Motor drive system**:
In **motor drive systems**, **TK10P60W-VB** can be used as an efficient switching device to control the start, speed regulation and stop of the motor. It is particularly suitable for **industrial automation, home appliance motor control systems, robot drive systems** and other applications. With its low on-resistance and high current handling capability, this MOSFET can effectively control the operation of the motor and reduce the heat generated by switching losses, improving system efficiency and motor stability.
3. **Inverter and power conversion systems**:
**TK10P60W-VB** is also very suitable for **inverter systems**, especially those that need to convert **DC power to AC power**. For example, in **solar inverters, wind power generation systems** and **UPS power systems**, this MOSFET can provide efficient power conversion, reduce power losses, and improve overall system efficiency and operating stability. Its **650V** voltage capability is suitable for high voltage applications, especially in **high power inverters**.
4. **High power power modules**:
**TK10P60W-VB** is also used in **high power power modules**, especially in **industrial power systems, energy distribution systems**. The **650V** voltage rating and **11A** current capability of this MOSFET make it suitable for load regulation that requires higher voltage and current. Its low on-resistance enables it to provide higher efficiency and reduce power loss in power transmission and distribution, and is widely used in **data center power supplies, industrial equipment power modules** and other fields.
5. **Battery Management System (BMS)**:
In the **Battery Management System** (BMS), the **TK10P60W-VB** can be used as a switching element to control the battery charging and discharging process. Especially in **electric vehicles** and **energy storage systems**, this MOSFET can operate safely at high voltages and provide efficient charging and discharging control of the battery. Due to its low on-resistance, it can reduce heat generation, extend battery life, and improve the energy efficiency of the entire system.
6. **Power Electronic Equipment**:
Due to the **TK10P60W-VB**’s high voltage and high current carrying capacity, it is suitable for **power electronic equipment**, such as **power conditioning, power factor correction (PFC) circuits, smart grid equipment**, etc. Its low on-resistance and high current capability enable it to have lower losses during power transmission and provide precise power regulation, which is especially suitable for high-power power equipment and electrical control systems.
1. **Switching power supply (SMPS)**:
**TK10P60W-VB** is a high voltage **N-Channel MOSFET**, which is very suitable for **switching power supply (SMPS)**. Its **650V** voltage tolerance and **370mΩ** low on-resistance can effectively reduce power loss during switching and improve conversion efficiency. This MOSFET is suitable for **AC-DC power adapters, DC-DC converters (DC-DC Converters)**, and **high-efficiency power management systems**, which can provide stable power output and maintain low energy loss.
2. **Motor drive system**:
In **motor drive systems**, **TK10P60W-VB** can be used as an efficient switching device to control the start, speed regulation and stop of the motor. It is particularly suitable for **industrial automation, home appliance motor control systems, robot drive systems** and other applications. With its low on-resistance and high current handling capability, this MOSFET can effectively control the operation of the motor and reduce the heat generated by switching losses, improving system efficiency and motor stability.
3. **Inverter and power conversion systems**:
**TK10P60W-VB** is also very suitable for **inverter systems**, especially those that need to convert **DC power to AC power**. For example, in **solar inverters, wind power generation systems** and **UPS power systems**, this MOSFET can provide efficient power conversion, reduce power losses, and improve overall system efficiency and operating stability. Its **650V** voltage capability is suitable for high voltage applications, especially in **high power inverters**.
4. **High power power modules**:
**TK10P60W-VB** is also used in **high power power modules**, especially in **industrial power systems, energy distribution systems**. The **650V** voltage rating and **11A** current capability of this MOSFET make it suitable for load regulation that requires higher voltage and current. Its low on-resistance enables it to provide higher efficiency and reduce power loss in power transmission and distribution, and is widely used in **data center power supplies, industrial equipment power modules** and other fields.
5. **Battery Management System (BMS)**:
In the **Battery Management System** (BMS), the **TK10P60W-VB** can be used as a switching element to control the battery charging and discharging process. Especially in **electric vehicles** and **energy storage systems**, this MOSFET can operate safely at high voltages and provide efficient charging and discharging control of the battery. Due to its low on-resistance, it can reduce heat generation, extend battery life, and improve the energy efficiency of the entire system.
6. **Power Electronic Equipment**:
Due to the **TK10P60W-VB**’s high voltage and high current carrying capacity, it is suitable for **power electronic equipment**, such as **power conditioning, power factor correction (PFC) circuits, smart grid equipment**, etc. Its low on-resistance and high current capability enable it to have lower losses during power transmission and provide precise power regulation, which is especially suitable for high-power power equipment and electrical control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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