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TK100S04N1L-VB Product details
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1. **TK100S04N1L-VB Product Introduction: **
TK100S04N1L-VB is a single N-channel MOSFET in TO252 package, designed for low voltage and high current applications, with a maximum drain-source voltage (VDS) of 40V, extremely low on-resistance (RDS(ON) = 1.6mΩ@VGS=10V), and can carry a maximum drain current of 120A. This MOSFET uses Trench technology, with extremely low switching losses and efficient current conduction capabilities. With its excellent thermal and switching performance, TK100S04N1L-VB is particularly suitable for high-power, high-efficiency power management, battery-powered systems, power conversion and load switching applications. The device performs well in battery management systems, power tools, DC-DC converters, switching power supplies and other fields, and can improve system efficiency and reduce power consumption.
TK100S04N1L-VB is a single N-channel MOSFET in TO252 package, designed for low voltage and high current applications, with a maximum drain-source voltage (VDS) of 40V, extremely low on-resistance (RDS(ON) = 1.6mΩ@VGS=10V), and can carry a maximum drain current of 120A. This MOSFET uses Trench technology, with extremely low switching losses and efficient current conduction capabilities. With its excellent thermal and switching performance, TK100S04N1L-VB is particularly suitable for high-power, high-efficiency power management, battery-powered systems, power conversion and load switching applications. The device performs well in battery management systems, power tools, DC-DC converters, switching power supplies and other fields, and can improve system efficiency and reduce power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **TK100S04N1L-VB Detailed parameter description: **
- **Package type: ** TO252
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): **
- 3mΩ@VGS=4.5V
- 1.6mΩ@VGS=10V
- **Maximum leakage current (ID): ** 120A
- **Maximum power dissipation (Ptot): ** 150W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 1.5°C/W (source to junction)
- **Technology: ** Trench technology
- **Maximum drive voltage: ** ±20V
- **Drive voltage requirement: ** VGS=4.5V or 10V
- **Package type: ** TO252
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): **
- 3mΩ@VGS=4.5V
- 1.6mΩ@VGS=10V
- **Maximum leakage current (ID): ** 120A
- **Maximum power dissipation (Ptot): ** 150W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 1.5°C/W (source to junction)
- **Technology: ** Trench technology
- **Maximum drive voltage: ** ±20V
- **Drive voltage requirement: ** VGS=4.5V or 10V
Domain and module applications：
3. **TK100S04N1L-VB Applications and Modules:**
# **1. Battery Management System (BMS)**
TK100S04N1L-VB is widely used in battery management systems, especially in electric vehicles (EV) and energy storage systems. Due to its low on-resistance and high current capability (120A), it is able to handle the battery charging and discharging process and effectively reduce power consumption and improve system efficiency. This MOSFET can provide efficient and stable performance in battery voltage regulation and load switching, ensuring that the battery maintains an efficient and safe working state during charging and discharging.
# **6. Power Conversion Equipment**
This MOSFET can also be used in efficient power conversion equipment such as inverters and power amplifiers. In solar photovoltaic systems, UPS power supplies and power conditioning equipment, the high efficiency performance of TK100S04N1L-VB makes it an ideal switching element that can provide fast response and minimize energy loss, ensuring system efficiency and reliability.
# **7. High-power load control**
Due to the low on-resistance and high current carrying capacity of TK100S04N1L-VB, it can also be used in high-power load control systems, such as load switching, protection circuits, etc. in power systems. Its high power density and fast switching characteristics make it suitable for load control and current protection in industrial equipment and power electronic equipment.
Summary:
TK100S04N1L-VB is a high-efficiency N-channel MOSFET in TO252 package with a maximum drain-source voltage of 40V and a maximum drain current of 120A. Its low on-resistance (RDS(ON) = 1.6mΩ@VGS=10V) and efficient Trench technology enable it to perform well in high-efficiency applications such as power management, battery management, power tools, DC-DC converters, etc. The device plays an important role in reducing power consumption, improving efficiency and providing stable performance, and is widely used in various types of high-power loads and high-efficiency power conversion systems.
# **1. Battery Management System (BMS)**
TK100S04N1L-VB is widely used in battery management systems, especially in electric vehicles (EV) and energy storage systems. Due to its low on-resistance and high current capability (120A), it is able to handle the battery charging and discharging process and effectively reduce power consumption and improve system efficiency. This MOSFET can provide efficient and stable performance in battery voltage regulation and load switching, ensuring that the battery maintains an efficient and safe working state during charging and discharging.
# **6. Power Conversion Equipment**
This MOSFET can also be used in efficient power conversion equipment such as inverters and power amplifiers. In solar photovoltaic systems, UPS power supplies and power conditioning equipment, the high efficiency performance of TK100S04N1L-VB makes it an ideal switching element that can provide fast response and minimize energy loss, ensuring system efficiency and reliability.
# **7. High-power load control**
Due to the low on-resistance and high current carrying capacity of TK100S04N1L-VB, it can also be used in high-power load control systems, such as load switching, protection circuits, etc. in power systems. Its high power density and fast switching characteristics make it suitable for load control and current protection in industrial equipment and power electronic equipment.
Summary:
TK100S04N1L-VB is a high-efficiency N-channel MOSFET in TO252 package with a maximum drain-source voltage of 40V and a maximum drain current of 120A. Its low on-resistance (RDS(ON) = 1.6mΩ@VGS=10V) and efficient Trench technology enable it to perform well in high-efficiency applications such as power management, battery management, power tools, DC-DC converters, etc. The device plays an important role in reducing power consumption, improving efficiency and providing stable performance, and is widely used in various types of high-power loads and high-efficiency power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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