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TK100F04K3-VB Product details
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TK100F04K3-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. With a drain-source voltage (VDS) of 40V, this MOSFET is suitable for low voltage power management, power switching and current control applications. Its gate threshold voltage (Vth) is 3V, which ensures that it can start at a lower gate voltage. The on-resistance (RDS(ON)) of TK100F04K3-VB is very low, 3mΩ (VGS=4.5V) and 1.6mΩ (VGS=10V), respectively, which makes it have extremely low power loss and high efficiency under high current load. Its maximum drain current (ID) is 120A, which can handle larger currents and is suitable for high power applications. Using Trench technology, TK100F04K3-VB can provide lower on-resistance and faster switching response, and is widely used in power management, high-efficiency power supplies, and various high current control systems.
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TK100F04K3-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. With a drain-source voltage (VDS) of 40V, this MOSFET is suitable for low voltage power management, power switching and current control applications. Its gate threshold voltage (Vth) is 3V, which ensures that it can start at a lower gate voltage. The on-resistance (RDS(ON)) of TK100F04K3-VB is very low, 3mΩ (VGS=4.5V) and 1.6mΩ (VGS=10V), respectively, which makes it have extremely low power loss and high efficiency under high current load. Its maximum drain current (ID) is 120A, which can handle larger currents and is suitable for high power applications. Using Trench technology, TK100F04K3-VB can provide lower on-resistance and faster switching response, and is widely used in power management, high-efficiency power supplies, and various high current control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON)**: 3mΩ@VGS=4.5V, 1.6mΩ@VGS=10V
- **ID (maximum drain current)**: 120A
- **Technology**: Trench technology
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- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON)**: 3mΩ@VGS=4.5V, 1.6mΩ@VGS=10V
- **ID (maximum drain current)**: 120A
- **Technology**: Trench technology
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Domain and module applications：
Examples**
The low on-resistance and high current carrying capacity of the TK100F04K3-VB make it ideal for high-efficiency power management systems. With a maximum drain-source voltage of 40V, it is ideal for low-voltage DC-DC converters, power supply modules, and current control applications such as battery management systems (BMS) and high-power LED driver power supplies.
In industrial applications, the TK100F04K3-VB can be used in servo motor drives, power tool control systems, and various types of automation equipment to achieve efficient power conversion and current control. Its ultra-low on-resistance ensures energy efficiency under high current loads and effectively reduces power loss. In electric vehicles (EVs) and battery charging systems, the TK100F04K3-VB can also provide efficient current switching and overload protection to help achieve fast charging and extend system life.
In addition, due to its good switching characteristics, the TK100F04K3-VB is also suitable for high-frequency switching power supplies (SMPS) and high-efficiency power conversion modules, especially in power applications that require high current and low power loss.
In summary, the TK100F04K3-VB is a high-efficiency, high-current carrying capacity MOSFET suitable for DC-DC converters, battery management, power tools and various automation systems, providing low power loss and high switching efficiency, and is an ideal choice for various high-current and low-voltage applications.
The low on-resistance and high current carrying capacity of the TK100F04K3-VB make it ideal for high-efficiency power management systems. With a maximum drain-source voltage of 40V, it is ideal for low-voltage DC-DC converters, power supply modules, and current control applications such as battery management systems (BMS) and high-power LED driver power supplies.
In industrial applications, the TK100F04K3-VB can be used in servo motor drives, power tool control systems, and various types of automation equipment to achieve efficient power conversion and current control. Its ultra-low on-resistance ensures energy efficiency under high current loads and effectively reduces power loss. In electric vehicles (EVs) and battery charging systems, the TK100F04K3-VB can also provide efficient current switching and overload protection to help achieve fast charging and extend system life.
In addition, due to its good switching characteristics, the TK100F04K3-VB is also suitable for high-frequency switching power supplies (SMPS) and high-efficiency power conversion modules, especially in power applications that require high current and low power loss.
In summary, the TK100F04K3-VB is a high-efficiency, high-current carrying capacity MOSFET suitable for DC-DC converters, battery management, power tools and various automation systems, providing low power loss and high switching efficiency, and is an ideal choice for various high-current and low-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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