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TJ80S04M3L-VB Product details
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**TJ80S04M3L-VB Product Introduction: **
**TJ80S04M3L-VB** is a **P-Channel MOSFET** from **VBsemi**, packaged in **TO252** package type. This MOSFET adopts advanced **Trench technology**, has excellent switching performance and low on-resistance, and is suitable for medium and high power applications. With its low **RDS(ON)** and high **ID** capabilities, it can effectively reduce power loss and provide stable operating performance in a variety of power management systems.
**TJ80S04M3L-VB** is a **P-Channel MOSFET** from **VBsemi**, packaged in **TO252** package type. This MOSFET adopts advanced **Trench technology**, has excellent switching performance and low on-resistance, and is suitable for medium and high power applications. With its low **RDS(ON)** and high **ID** capabilities, it can effectively reduce power loss and provide stable operating performance in a variety of power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
**Detailed parameter description:**
- **Model:** TJ80S04M3L-VB
- **Package:** TO252
- **Configuration:** Single P-Channel
- **Drain-source voltage (VDS):** -40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 13mΩ (at VGS = 4.5V)
- 6.8mΩ (at VGS = 10V)
- **Continuous leakage current (ID):** -90A
- **Technology:** Trench
- **Maximum power consumption:** Suitable for high power applications such as power management and high power switching circuits.
- **Model:** TJ80S04M3L-VB
- **Package:** TO252
- **Configuration:** Single P-Channel
- **Drain-source voltage (VDS):** -40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):**
- 13mΩ (at VGS = 4.5V)
- 6.8mΩ (at VGS = 10V)
- **Continuous leakage current (ID):** -90A
- **Technology:** Trench
- **Maximum power consumption:** Suitable for high power applications such as power management and high power switching circuits.
Domain and module applications：
**Application fields and modules:**
1. **Power management system:**
- **TJ80S04M3L-VB** has low on-resistance (RDS(ON)) and high current carrying capacity, so it is very suitable for high-efficiency power management systems, especially as the main switching element in power modules. It can effectively improve power conversion efficiency and reduce power loss.
2. **DC-DC converter:**
- In DC-DC converters, P-Channel MOSFET is a commonly used switching element. **TJ80S04M3L-VB**'s low on-resistance characteristics enable it to provide lower power loss during the conversion process and ensure higher efficiency, especially suitable for high current and high power DC-DC conversion applications.
3. **Battery Management System:**
- In battery management systems, low on-resistance is a key parameter, and **TJ80S04M3L-VB**'s low RDS(ON) and high ID make it an ideal choice. It can work stably during battery charging and discharging, effectively control the current flow, and improve battery efficiency.
4. **Inverters and Power Amplifiers:**
- Due to its strong current carrying capacity and low switching loss, **TJ80S04M3L-VB** is also very suitable for power switches in energy conversion devices such as solar inverters and wind power generation systems.
5. **Power Tools and Automotive Applications:**
- In high-current, high-power applications such as power tools and electric vehicle drive circuits, **TJ80S04M3L-VB**'s high current carrying capacity enables it to stably control high-power currents and ensure system reliability and efficiency.
1. **Power management system:**
- **TJ80S04M3L-VB** has low on-resistance (RDS(ON)) and high current carrying capacity, so it is very suitable for high-efficiency power management systems, especially as the main switching element in power modules. It can effectively improve power conversion efficiency and reduce power loss.
2. **DC-DC converter:**
- In DC-DC converters, P-Channel MOSFET is a commonly used switching element. **TJ80S04M3L-VB**'s low on-resistance characteristics enable it to provide lower power loss during the conversion process and ensure higher efficiency, especially suitable for high current and high power DC-DC conversion applications.
3. **Battery Management System:**
- In battery management systems, low on-resistance is a key parameter, and **TJ80S04M3L-VB**'s low RDS(ON) and high ID make it an ideal choice. It can work stably during battery charging and discharging, effectively control the current flow, and improve battery efficiency.
4. **Inverters and Power Amplifiers:**
- Due to its strong current carrying capacity and low switching loss, **TJ80S04M3L-VB** is also very suitable for power switches in energy conversion devices such as solar inverters and wind power generation systems.
5. **Power Tools and Automotive Applications:**
- In high-current, high-power applications such as power tools and electric vehicle drive circuits, **TJ80S04M3L-VB**'s high current carrying capacity enables it to stably control high-power currents and ensure system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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