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TJ50S06M3L-VB Product details
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Product Introduction:
TJ50S06M3L-VB is a high-performance P-channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -70A. This MOSFET uses Trench technology and has very low on-resistance of 8mΩ (VGS = 4.5V) and 5.5mΩ (VGS = 10V). Its gate threshold voltage (Vth) is -3V, which is suitable for various power management, power conversion and drive applications, especially for low conduction loss and high efficiency circuit design.
The P-channel configuration and excellent conduction characteristics of TJ50S06M3L-VB make it widely used in power switching, reverse current control and load driving, especially in situations where negative power supply or high-efficiency switching is required. Its high current capability and low on-resistance make it perform well in motor drive, power management and inverter applications.
TJ50S06M3L-VB is a high-performance P-channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -70A. This MOSFET uses Trench technology and has very low on-resistance of 8mΩ (VGS = 4.5V) and 5.5mΩ (VGS = 10V). Its gate threshold voltage (Vth) is -3V, which is suitable for various power management, power conversion and drive applications, especially for low conduction loss and high efficiency circuit design.
The P-channel configuration and excellent conduction characteristics of TJ50S06M3L-VB make it widely used in power switching, reverse current control and load driving, especially in situations where negative power supply or high-efficiency switching is required. Its high current capability and low on-resistance make it perform well in motor drive, power management and inverter applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | 5.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 5.5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -70A
- **Technology**: Trench
- **Junction temperature**: Maximum operating temperature range is 150°C
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 5.5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -70A
- **Technology**: Trench
- **Junction temperature**: Maximum operating temperature range is 150°C
Domain and module applications：
Application fields and modules:
1. **Motor drive**:
TJ50S06M3L-VB, as a P-channel MOSFET, can be widely used in motor drive circuits, especially for drive modules that require high-efficiency reverse control. In industrial automation, home appliance power tools, electric vehicles and other fields, MOSFET can play an important role in load drive and reverse current protection. Its low RDS(ON) characteristics enable higher efficiency when the motor starts, reduce heat loss, and improve the energy efficiency of the overall system.
2. **Power management and battery protection**:
In power management systems, TJ50S06M3L-VB can be used as an efficient switching element for negative power supply. Especially in battery management systems (BMS), P-channel MOSFET is mainly used to control the current flow during battery charging and discharging. It has a low on-resistance, can effectively reduce power loss, and provide high efficiency and safety in functions such as battery overcharge, over-discharge protection and battery voltage regulation.
3. **DC-DC Converter and Inverter**:
In DC-DC converter or inverter module, TJ50S06M3L-VB can be used as power switch element. Due to its high current capability and low on-resistance, MOSFET can provide high efficiency in medium and high power level conversion applications, especially suitable for power supply voltage regulation, inverter circuit and power conditioning module. It can achieve precise voltage control and efficient power conversion in solar inverter and power electronic converter.
4. **Load Switch and Reverse Current Protection**:
In some applications requiring reverse current control, TJ50S06M3L-VB can be used as load switch, especially in high voltage or high current occasions, such as power modules, battery charging systems, etc. The P-channel characteristics of this MOSFET give it a significant advantage in applications that need to control negative voltage or negative current, providing reverse current protection and efficient current switching function.
5. **Automotive Electronic Systems**:
In automotive electronic systems, especially in the electric drive systems of high-efficiency electric vehicles (EVs) and hybrid electric vehicles (HEVs), the TJ50S06M3L-VB can be used for battery management, power conversion, and motor drive. Its high current capability and low on-resistance provide excellent performance in these applications, especially for applications requiring efficient reverse current control and high-power load switching.
1. **Motor drive**:
TJ50S06M3L-VB, as a P-channel MOSFET, can be widely used in motor drive circuits, especially for drive modules that require high-efficiency reverse control. In industrial automation, home appliance power tools, electric vehicles and other fields, MOSFET can play an important role in load drive and reverse current protection. Its low RDS(ON) characteristics enable higher efficiency when the motor starts, reduce heat loss, and improve the energy efficiency of the overall system.
2. **Power management and battery protection**:
In power management systems, TJ50S06M3L-VB can be used as an efficient switching element for negative power supply. Especially in battery management systems (BMS), P-channel MOSFET is mainly used to control the current flow during battery charging and discharging. It has a low on-resistance, can effectively reduce power loss, and provide high efficiency and safety in functions such as battery overcharge, over-discharge protection and battery voltage regulation.
3. **DC-DC Converter and Inverter**:
In DC-DC converter or inverter module, TJ50S06M3L-VB can be used as power switch element. Due to its high current capability and low on-resistance, MOSFET can provide high efficiency in medium and high power level conversion applications, especially suitable for power supply voltage regulation, inverter circuit and power conditioning module. It can achieve precise voltage control and efficient power conversion in solar inverter and power electronic converter.
4. **Load Switch and Reverse Current Protection**:
In some applications requiring reverse current control, TJ50S06M3L-VB can be used as load switch, especially in high voltage or high current occasions, such as power modules, battery charging systems, etc. The P-channel characteristics of this MOSFET give it a significant advantage in applications that need to control negative voltage or negative current, providing reverse current protection and efficient current switching function.
5. **Automotive Electronic Systems**:
In automotive electronic systems, especially in the electric drive systems of high-efficiency electric vehicles (EVs) and hybrid electric vehicles (HEVs), the TJ50S06M3L-VB can be used for battery management, power conversion, and motor drive. Its high current capability and low on-resistance provide excellent performance in these applications, especially for applications requiring efficient reverse current control and high-power load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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