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TJ40S04M3L-VB Product details
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1. **TJ40S04M3L-VB Product Introduction: **
TJ40S04M3L-VB is a single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of -40V and can provide up to -90A of drain current (ID) at a low on-resistance (RDS(ON) = 6.8mΩ@VGS=10V), suitable for high-efficiency power switching applications. The device uses Trench technology, has low conduction losses and high switching speeds, and can provide stable performance in high power conversion, load switching and battery management. TJ40S04M3L-VB is suitable for low voltage load drive, power management, inverter and other fields, especially in applications requiring higher current capacity, which can improve the efficiency and reliability of the overall system.
TJ40S04M3L-VB is a single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of -40V and can provide up to -90A of drain current (ID) at a low on-resistance (RDS(ON) = 6.8mΩ@VGS=10V), suitable for high-efficiency power switching applications. The device uses Trench technology, has low conduction losses and high switching speeds, and can provide stable performance in high power conversion, load switching and battery management. TJ40S04M3L-VB is suitable for low voltage load drive, power management, inverter and other fields, especially in applications requiring higher current capacity, which can improve the efficiency and reliability of the overall system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. **TJ40S04M3L-VB Detailed parameter description: **
- **Package type: ** TO252
- **Configuration: ** Single P-channel MOSFET
- **Drain-source voltage (VDS): ** -40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2V
- **On-resistance (RDS(ON)): **
- 13mΩ@VGS=4.5V
- 6.8mΩ@VGS=10V
- **Maximum leakage current (ID): ** -90A
- **Maximum power dissipation (Ptot): ** 120W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 1.5°C/W (source to junction)
- **Technology: ** Trench technology
- **Maximum drive voltage: ** ±20V
- **Drive voltage requirement: ** VGS=4.5V or 10V
- **Package type: ** TO252
- **Configuration: ** Single P-channel MOSFET
- **Drain-source voltage (VDS): ** -40V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2V
- **On-resistance (RDS(ON)): **
- 13mΩ@VGS=4.5V
- 6.8mΩ@VGS=10V
- **Maximum leakage current (ID): ** -90A
- **Maximum power dissipation (Ptot): ** 120W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 1.5°C/W (source to junction)
- **Technology: ** Trench technology
- **Maximum drive voltage: ** ±20V
- **Drive voltage requirement: ** VGS=4.5V or 10V
Domain and module applications：
3. **TJ40S04M3L-VB Applications and Modules: **
# **1. Battery Management System (BMS) **
TJ40S04M3L-VB has important applications in battery management systems, especially electric vehicles (EV) and energy storage systems. Its low on-resistance and high current carrying capacity (90A) enable it to handle the high power output and charging and discharging process of the battery. This MOSFET can effectively control the battery current and provide efficient power transmission, ensuring that the battery maintains an efficient and safe working state during the charging and discharging process.
# **6. Power Switch and Load Control **
TJ40S04M3L-VB can also be used as a load switch in power modules, overcurrent protection, load switching and control circuits in home appliances. Especially for applications that require high current and fast switching, it can stably switch loads and maintain low power consumption and high efficiency.
# **7. Power Conversion and Inverter**
TJ40S04M3L-VB can be used in power conversion equipment, such as inverters and power modules, and is particularly suitable for applications where P-channel switches are required. It can effectively manage and control the load flow during voltage conversion, and is suitable for solar inverters and other power conversion equipment.
Summary:
TJ40S04M3L-VB is a high-efficiency P-channel MOSFET with a maximum drain-source voltage of 40V and a maximum drain current of 90A. It uses a TO252 package and is suitable for battery management, power switching, DC-DC conversion, motor drive, and switching power supplies. Its low on-resistance and high switching performance enable it to provide reliable performance in high-efficiency power management, load control, and high power conversion, and is widely used in power management, electric vehicles, power electronics, and other fields.
# **1. Battery Management System (BMS) **
TJ40S04M3L-VB has important applications in battery management systems, especially electric vehicles (EV) and energy storage systems. Its low on-resistance and high current carrying capacity (90A) enable it to handle the high power output and charging and discharging process of the battery. This MOSFET can effectively control the battery current and provide efficient power transmission, ensuring that the battery maintains an efficient and safe working state during the charging and discharging process.
# **6. Power Switch and Load Control **
TJ40S04M3L-VB can also be used as a load switch in power modules, overcurrent protection, load switching and control circuits in home appliances. Especially for applications that require high current and fast switching, it can stably switch loads and maintain low power consumption and high efficiency.
# **7. Power Conversion and Inverter**
TJ40S04M3L-VB can be used in power conversion equipment, such as inverters and power modules, and is particularly suitable for applications where P-channel switches are required. It can effectively manage and control the load flow during voltage conversion, and is suitable for solar inverters and other power conversion equipment.
Summary:
TJ40S04M3L-VB is a high-efficiency P-channel MOSFET with a maximum drain-source voltage of 40V and a maximum drain current of 90A. It uses a TO252 package and is suitable for battery management, power switching, DC-DC conversion, motor drive, and switching power supplies. Its low on-resistance and high switching performance enable it to provide reliable performance in high-efficiency power management, load control, and high power conversion, and is widely used in power management, electric vehicles, power electronics, and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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