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TJ15S06M3L-VB Product details
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TJ15S06M3L-VB is a high-performance N-channel P-type MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET is suitable for power switches and current control applications that require a negative voltage working environment. Its gate threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate voltage, improving switching efficiency. The on-resistance (RDS(ON)) of TJ15S06M3L-VB is 58mΩ (VGS=4.5V) and 46mΩ (VGS=10V), which is relatively low and suitable for operation under medium current load conditions. Its maximum drain current (ID) is -35A, providing sufficient driving capability. TJ15S06M3L-VB uses Trench technology, which gives it lower conduction losses and better switching characteristics, and is widely used in high current and high efficiency systems such as power management and power conversion.
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TJ15S06M3L-VB is a high-performance N-channel P-type MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET is suitable for power switches and current control applications that require a negative voltage working environment. Its gate threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate voltage, improving switching efficiency. The on-resistance (RDS(ON)) of TJ15S06M3L-VB is 58mΩ (VGS=4.5V) and 46mΩ (VGS=10V), which is relatively low and suitable for operation under medium current load conditions. Its maximum drain current (ID) is -35A, providing sufficient driving capability. TJ15S06M3L-VB uses Trench technology, which gives it lower conduction losses and better switching characteristics, and is widely used in high current and high efficiency systems such as power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
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- **Package**: TO252
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON)**: 58mΩ@VGS=4.5V, 46mΩ@VGS=10V
- **ID (maximum drain current)**: -35A
- **Technology**: Trench technology
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- **Package**: TO252
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON)**: 58mΩ@VGS=4.5V, 46mΩ@VGS=10V
- **ID (maximum drain current)**: -35A
- **Technology**: Trench technology
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Domain and module applications：
Examples**
The TJ15S06M3L-VB has a drain-source voltage of -60V, making it ideal for power systems that require negative voltage switching and control, especially in inverters, DC-DC converters, and battery management systems. Due to its low on-resistance (RDS(ON)), the MOSFET is able to maintain low power losses at medium and high current loads, making it particularly suitable for efficient power conversion applications.
In electric vehicle (EV) chargers, solar inverters, and power distribution systems, the TJ15S06M3L-VB can be used as an efficient switching element to efficiently switch negative voltages to ensure system stability and energy efficiency. In industrial automation equipment, especially in power modules that require negative voltage control, its high switching frequency and low on-resistance make it an ideal choice.
In addition, in battery charging management systems, the TJ15S06M3L-VB can provide high-efficiency current control, reduce power losses, and extend battery life. It is also suitable for low-voltage DC power management and overcurrent protection circuits.
In summary, TJ15S06M3L-VB is a P-type MOSFET suitable for systems such as high-efficiency power conversion, battery management, electric vehicle chargers and inverters. Its low on-resistance, high current handling capability and high-efficiency switching characteristics make it an ideal choice for various power conversion modules and negative voltage control applications.
The TJ15S06M3L-VB has a drain-source voltage of -60V, making it ideal for power systems that require negative voltage switching and control, especially in inverters, DC-DC converters, and battery management systems. Due to its low on-resistance (RDS(ON)), the MOSFET is able to maintain low power losses at medium and high current loads, making it particularly suitable for efficient power conversion applications.
In electric vehicle (EV) chargers, solar inverters, and power distribution systems, the TJ15S06M3L-VB can be used as an efficient switching element to efficiently switch negative voltages to ensure system stability and energy efficiency. In industrial automation equipment, especially in power modules that require negative voltage control, its high switching frequency and low on-resistance make it an ideal choice.
In addition, in battery charging management systems, the TJ15S06M3L-VB can provide high-efficiency current control, reduce power losses, and extend battery life. It is also suitable for low-voltage DC power management and overcurrent protection circuits.
In summary, TJ15S06M3L-VB is a P-type MOSFET suitable for systems such as high-efficiency power conversion, battery management, electric vehicle chargers and inverters. Its low on-resistance, high current handling capability and high-efficiency switching characteristics make it an ideal choice for various power conversion modules and negative voltage control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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