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TF9606-VB Product details
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1. **TF9606-VB Product Introduction:**
TF9606-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, which can withstand higher operating voltages and is suitable for applications that require high withstand voltage characteristics. The maximum drain current (ID) of this MOSFET is 10A, and it uses planar technology to provide relatively low on-resistance (RDS(ON) = 830mΩ@VGS=10V), which can ensure good efficiency and stability in medium-power switching applications. TF9606-VB is widely used in power management, motor drive, industrial control, inverters and high-voltage power modules.
TF9606-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, which can withstand higher operating voltages and is suitable for applications that require high withstand voltage characteristics. The maximum drain current (ID) of this MOSFET is 10A, and it uses planar technology to provide relatively low on-resistance (RDS(ON) = 830mΩ@VGS=10V), which can ensure good efficiency and stability in medium-power switching applications. TF9606-VB is widely used in power management, motor drive, industrial control, inverters and high-voltage power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **TF9606-VB detailed parameter description:**
- **Package type:** TO220F
- **Configuration:** Single N-channel MOSFET
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 830mΩ@VGS=10V
- **Maximum leakage current (ID):** 10A
- **Maximum power dissipation (Ptot):** 80W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj):** 150°C
- **Operating temperature range:** -55°C to +150°C
- **Thermal resistance (RthJC):** 2.5°C/W (source to junction)
- **Technology:** Plannar technology
- **Maximum drive voltage:** ±30V
- **Package type:** TO220F
- **Configuration:** Single N-channel MOSFET
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 830mΩ@VGS=10V
- **Maximum leakage current (ID):** 10A
- **Maximum power dissipation (Ptot):** 80W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj):** 150°C
- **Operating temperature range:** -55°C to +150°C
- **Thermal resistance (RthJC):** 2.5°C/W (source to junction)
- **Technology:** Plannar technology
- **Maximum drive voltage:** ±30V
Domain and module applications：
3. **TF9606-VB application fields and modules: **
# **1. Switching power supply (SMPS) **
TF9606-VB can be used in switching power supply (SMPS). Its 650V drain-source voltage and low on-resistance make it very suitable for providing high efficiency in high-voltage power conversion. In power management applications, TF9606-VB can effectively reduce conduction losses and improve system efficiency. It is suitable for industrial power supply, communication power supply, LED driver power supply, etc.
# **6. Overvoltage protection and power protection module **
TF9606-VB is suitable for high voltage protection and power protection modules, such as overload protection, current limiting and short circuit protection circuits. In these modules, TF9606-VB can protect other components in the power system from damage through efficient switch control. Its high withstand voltage of 650V and low on-resistance ensure that the power protection system can respond quickly and cut off the circuit under abnormal conditions to avoid overcurrent or overvoltage damage.
# **7. High-voltage power supply system**
As TF9606-VB has a withstand voltage of 650V, it is very suitable for high-voltage power supply systems, especially in applications that require higher voltage and current stability, such as power electronics and industrial automation control systems. This MOSFET can provide reliable switching function under high voltage and is an ideal choice for high-voltage power supply design.
Summary:
TF9606-VB is a single N-channel MOSFET suitable for high voltage (650V) and high power applications. It adopts TO220F package and combines Plannar technology. It is widely used in switching power supplies, inverters, motor drives, power regulation, battery management systems, and high-voltage protection. It has low on-resistance and high withstand voltage, and can provide efficient switching performance in high-voltage power electronic systems to ensure efficient operation and reliability of the system.
# **1. Switching power supply (SMPS) **
TF9606-VB can be used in switching power supply (SMPS). Its 650V drain-source voltage and low on-resistance make it very suitable for providing high efficiency in high-voltage power conversion. In power management applications, TF9606-VB can effectively reduce conduction losses and improve system efficiency. It is suitable for industrial power supply, communication power supply, LED driver power supply, etc.
# **6. Overvoltage protection and power protection module **
TF9606-VB is suitable for high voltage protection and power protection modules, such as overload protection, current limiting and short circuit protection circuits. In these modules, TF9606-VB can protect other components in the power system from damage through efficient switch control. Its high withstand voltage of 650V and low on-resistance ensure that the power protection system can respond quickly and cut off the circuit under abnormal conditions to avoid overcurrent or overvoltage damage.
# **7. High-voltage power supply system**
As TF9606-VB has a withstand voltage of 650V, it is very suitable for high-voltage power supply systems, especially in applications that require higher voltage and current stability, such as power electronics and industrial automation control systems. This MOSFET can provide reliable switching function under high voltage and is an ideal choice for high-voltage power supply design.
Summary:
TF9606-VB is a single N-channel MOSFET suitable for high voltage (650V) and high power applications. It adopts TO220F package and combines Plannar technology. It is widely used in switching power supplies, inverters, motor drives, power regulation, battery management systems, and high-voltage protection. It has low on-resistance and high withstand voltage, and can provide efficient switching performance in high-voltage power electronic systems to ensure efficient operation and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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