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TF8N60-VB Product details
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TF8N60-VB is a high voltage N-channel MOSFET in TO220F package, designed for medium and high voltage power control and switching applications. With a drain-source voltage (VDS) of 650V, this MOSFET can withstand higher voltage working environments. Its gate threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of TF8N60-VB is 830mΩ (VGS=10V), which is suitable for medium current and higher voltage applications. The maximum drain current (ID) is 10A, which is suitable for applications requiring medium power and high voltage. TF8N60-VB uses Plannar technology, providing stable switching characteristics and high voltage resistance, and is widely used in power management, power conversion and electric drive systems.
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TF8N60-VB is a high voltage N-channel MOSFET in TO220F package, designed for medium and high voltage power control and switching applications. With a drain-source voltage (VDS) of 650V, this MOSFET can withstand higher voltage working environments. Its gate threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of TF8N60-VB is 830mΩ (VGS=10V), which is suitable for medium current and higher voltage applications. The maximum drain current (ID) is 10A, which is suitable for applications requiring medium power and high voltage. TF8N60-VB uses Plannar technology, providing stable switching characteristics and high voltage resistance, and is widely used in power management, power conversion and electric drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **ID (maximum drain current)**: 10A
- **Technology**: Plannar technology
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **ID (maximum drain current)**: 10A
- **Technology**: Plannar technology
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Domain and module applications：
Example**
The 650V withstand voltage of the TF8N60-VB makes it suitable for areas that require high-voltage power management and switch control. Despite its high on-resistance, it can still provide reliable performance in some medium-power, low-current load applications. The TF8N60-VB is widely used in power conversion fields such as AC-DC converters, DC-DC converters, power modules, and overload protection systems.
In power drive systems such as power tools, home appliances, LED lighting drivers, and industrial control systems, the TF8N60-VB can provide stable current switching control, especially in environments that require higher voltages and medium currents. Its Plannar technology gives this MOSFET good stability and durability in high-voltage applications, and despite its relatively high on-resistance under high-current applications, it can still meet the requirements of most medium and low-power applications.
In addition, the TF8N60-VB is also suitable for power transmission systems such as uninterruptible power supply (UPS) systems and power control modules. Its 650V withstand voltage and low on-resistance make it suitable for power conversion and power management applications with higher voltage requirements, especially in systems that require higher switching efficiency and reliability.
In short, TF8N60-VB is suitable for applications in medium-voltage power conversion, power management modules, drive systems and UPS, providing stable and reliable switching control and voltage management capabilities.
The 650V withstand voltage of the TF8N60-VB makes it suitable for areas that require high-voltage power management and switch control. Despite its high on-resistance, it can still provide reliable performance in some medium-power, low-current load applications. The TF8N60-VB is widely used in power conversion fields such as AC-DC converters, DC-DC converters, power modules, and overload protection systems.
In power drive systems such as power tools, home appliances, LED lighting drivers, and industrial control systems, the TF8N60-VB can provide stable current switching control, especially in environments that require higher voltages and medium currents. Its Plannar technology gives this MOSFET good stability and durability in high-voltage applications, and despite its relatively high on-resistance under high-current applications, it can still meet the requirements of most medium and low-power applications.
In addition, the TF8N60-VB is also suitable for power transmission systems such as uninterruptible power supply (UPS) systems and power control modules. Its 650V withstand voltage and low on-resistance make it suitable for power conversion and power management applications with higher voltage requirements, especially in systems that require higher switching efficiency and reliability.
In short, TF8N60-VB is suitable for applications in medium-voltage power conversion, power management modules, drive systems and UPS, providing stable and reliable switching control and voltage management capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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