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TF7N60FD-VB Product details

Product introduction:

1. **TF7N60FD-VB Product Introduction: **

TF7N60FD-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 650V, suitable for applications requiring high voltage resistance and robust performance. This MOSFET is equipped with planar technology, providing efficient conduction performance and low on-resistance (RDS(ON) = 1100mΩ@VGS=10V), ensuring excellent efficiency and stability in medium power switching applications. The maximum drain current (ID) is 7A, making TF7N60FD-VB widely applicable in industrial power supplies, inverters, motor drives and high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 7A 1100mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. **TF7N60FD-VB detailed parameter description: **

- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 1100mΩ@VGS=10V
- **Maximum leakage current (ID): ** 7A
- **Maximum power dissipation (Ptot): ** 80W (depends on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 2.5°C/W (source to junction)
- **Technology:** Plannar technology
- **Maximum drive voltage:** ±30V

Domain and module applications:

3. **TF7N60FD-VB Application Fields and Modules: **

# **1. Switching Power Supply (SMPS): **
TF7N60FD-VB plays an important role in switching power supply (SMPS) applications due to its high withstand voltage characteristics (650V VDS) and moderate current carrying capacity (ID = 7A). In power conversion with high voltage requirements, TF7N60FD-VB provides the advantage of low on-resistance, which can effectively reduce switching losses and improve energy efficiency. It is widely used in industrial power supply, TV power supply, LED driver power supply and communication power supply.

# **6. Battery Management System (BMS): **
In the battery management system (BMS), TF7N60FD-VB can also provide efficient current switching and battery charge and discharge control. It is suitable for high voltage battery management applications to ensure the safety and high efficiency of the battery during charging and discharging.

# **7. Power Electronic Protection System: **
TF7N60FD-VB is suitable for use in power electronic protection systems, such as overload protection, short circuit protection and other modules. It can reliably carry and control large currents, ensuring that the power system is quickly protected and disconnected under abnormal conditions to avoid damage to other sensitive components.

# **8. High Voltage Transmission and Regulation System: **
TF7N60FD-VB is also used in some high voltage power transmission systems. Due to its 650V withstand voltage capability, this MOSFET can effectively withstand high voltages and is used in power regulation systems for tasks such as current control, power regulation and power conversion.

Summary:
TF7N60FD-VB is a high performance single N-channel MOSFET in a TO220F package, suitable for high voltage, high power switching and power management applications. Its 650V drain-source voltage, low on-resistance (RDS(ON) = 1100mΩ@VGS=10V) and 7A leakage current carrying capacity make it an ideal choice for switching power supplies, battery management, inverters, motor drives, power regulation and high-voltage power supply applications. TF7N60FD-VB can provide efficient switching operation, reduce energy loss, ensure high efficiency and reliability of the system, and is a key component in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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