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TF470-VB Product details
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1. **TF470-VB Product Introduction:**
TF470-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for high-power switching and power conversion applications. With a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 90A, the product can provide efficient energy conversion and current control. Its on-resistance (RDS(ON)) is as low as 9mΩ@VGS=10V, which makes TF470-VB have excellent performance in high-current and high-efficiency applications. Based on Trench technology, this MOSFET provides good thermal stability and low switching losses, and is an ideal choice for high-efficiency power supplies, inverters, switching power supplies (SMPS), battery management systems (BMS) and other fields.
TF470-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for high-power switching and power conversion applications. With a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 90A, the product can provide efficient energy conversion and current control. Its on-resistance (RDS(ON)) is as low as 9mΩ@VGS=10V, which makes TF470-VB have excellent performance in high-current and high-efficiency applications. Based on Trench technology, this MOSFET provides good thermal stability and low switching losses, and is an ideal choice for high-efficiency power supplies, inverters, switching power supplies (SMPS), battery management systems (BMS) and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **TF470-VB detailed parameter description: **
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 9mΩ@VGS=10V
- **Maximum leakage current (ID): ** 90A
- **Maximum power dissipation (Ptot): ** 90W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.5°C/W (source to junction)
- **Technology:** Trench technology
- **Maximum drive voltage:** ±20V
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 9mΩ@VGS=10V
- **Maximum leakage current (ID): ** 90A
- **Maximum power dissipation (Ptot): ** 90W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.5°C/W (source to junction)
- **Technology:** Trench technology
- **Maximum drive voltage:** ±20V
Domain and module applications：
3. **TF470-VB Application Fields and Modules: **
# **1. Switching Power Supply (SMPS): **
TF470-VB is a highly efficient MOSFET widely used in switching power supplies (SMPS). In high power power conversion applications, TF470-VB provides low on-resistance (RDS(ON)), reduces switching losses and improves conversion efficiency. This makes it an ideal choice for high-performance power modules such as power adapters, industrial power supplies, and communication power supplies, ensuring stable operation of power systems and reducing heat generation.
# **6. Consumer Electronics: **
TF470-VB is also suitable for consumer electronic devices with high-efficiency power supply. Due to its high current carrying capacity and low on-resistance, it is widely used in power management of products such as laptops, TVs, audio systems, and game consoles. Its excellent current control and low loss performance help improve the overall efficiency of the device, extend battery life and reduce power loss.
# **7. Power system protection: **
TF470-VB also has important applications in power system protection modules. It can efficiently handle problems such as overload or short-circuit protection and ensure stable operation of the system. In industrial power systems, smart grids, and high-voltage power management systems, TF470-VB can provide fast current control and protection to ensure that the system is protected from current fluctuations.
# **8. Power transmission and distribution: **
TF470-VB is also widely used in power transmission and distribution systems, especially in power control and current regulation during power transmission. It can efficiently control the current flow in the power system, ensure stable power transmission, reduce losses, and improve the efficiency of the distribution system.
Summary:
TF470-VB is an efficient single N-channel MOSFET suitable for a variety of high-power switches and power management systems. Its low on-resistance (RDS(ON) = 9mΩ@VGS=10V) and high current carrying capacity (ID = 90A) make it an ideal choice for switching power supplies, battery management, inverters, electric vehicles, industrial automation, etc. TF470-VB uses Trench technology to provide excellent performance, reliability and energy efficiency, and is a key component in efficient power electronic systems.
# **1. Switching Power Supply (SMPS): **
TF470-VB is a highly efficient MOSFET widely used in switching power supplies (SMPS). In high power power conversion applications, TF470-VB provides low on-resistance (RDS(ON)), reduces switching losses and improves conversion efficiency. This makes it an ideal choice for high-performance power modules such as power adapters, industrial power supplies, and communication power supplies, ensuring stable operation of power systems and reducing heat generation.
# **6. Consumer Electronics: **
TF470-VB is also suitable for consumer electronic devices with high-efficiency power supply. Due to its high current carrying capacity and low on-resistance, it is widely used in power management of products such as laptops, TVs, audio systems, and game consoles. Its excellent current control and low loss performance help improve the overall efficiency of the device, extend battery life and reduce power loss.
# **7. Power system protection: **
TF470-VB also has important applications in power system protection modules. It can efficiently handle problems such as overload or short-circuit protection and ensure stable operation of the system. In industrial power systems, smart grids, and high-voltage power management systems, TF470-VB can provide fast current control and protection to ensure that the system is protected from current fluctuations.
# **8. Power transmission and distribution: **
TF470-VB is also widely used in power transmission and distribution systems, especially in power control and current regulation during power transmission. It can efficiently control the current flow in the power system, ensure stable power transmission, reduce losses, and improve the efficiency of the distribution system.
Summary:
TF470-VB is an efficient single N-channel MOSFET suitable for a variety of high-power switches and power management systems. Its low on-resistance (RDS(ON) = 9mΩ@VGS=10V) and high current carrying capacity (ID = 90A) make it an ideal choice for switching power supplies, battery management, inverters, electric vehicles, industrial automation, etc. TF470-VB uses Trench technology to provide excellent performance, reliability and energy efficiency, and is a key component in efficient power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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