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TF20N40-VB Product details
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TF20N40-VB is a high voltage N-channel MOSFET in a TO220F package, designed for applications requiring high voltage and medium current control. With a maximum drain-source voltage (VDS) of 650V, this MOSFET is suitable for a variety of high voltage power management, power control and switching applications. With a gate threshold voltage (Vth) of 3.5V, the TF20N40-VB has good switching performance. Its on-resistance (RDS(ON)) is 160mΩ (VGS=10V), which can effectively control the current flow while keeping power loss low. With a maximum drain current (ID) of 20A, it is suitable for high voltage applications with medium current loads. TF20N40-VB uses SJ_Multi-EPI technology, which improves the voltage withstand capability, switching speed and thermal management performance of the MOSFET, making it perform well in high voltage and high frequency applications.
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TF20N40-VB is a high voltage N-channel MOSFET in a TO220F package, designed for applications requiring high voltage and medium current control. With a maximum drain-source voltage (VDS) of 650V, this MOSFET is suitable for a variety of high voltage power management, power control and switching applications. With a gate threshold voltage (Vth) of 3.5V, the TF20N40-VB has good switching performance. Its on-resistance (RDS(ON)) is 160mΩ (VGS=10V), which can effectively control the current flow while keeping power loss low. With a maximum drain current (ID) of 20A, it is suitable for high voltage applications with medium current loads. TF20N40-VB uses SJ_Multi-EPI technology, which improves the voltage withstand capability, switching speed and thermal management performance of the MOSFET, making it perform well in high voltage and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 160mΩ@VGS=10V
- **ID (maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI technology
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 160mΩ@VGS=10V
- **ID (maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI technology
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Domain and module applications：
Examples**
The 650V drain-source voltage of TF20N40-VB makes it an ideal choice for high voltage applications and is widely used in high voltage power management and power control systems. For example, in solar inverters, AC-DC power converters, power distribution modules and other fields, TF20N40-VB can provide stable and reliable voltage control and current switching.
In addition, TF20N40-VB is also very suitable for applications with medium current loads such as power tools, industrial power control systems, battery chargers and motor drive systems. In these applications, TF20N40-VB can provide efficient current control, especially in high voltage environments, effectively reducing power losses and ensuring long-term stable operation of the system.
In inverters, UPS (uninterruptible power supply) systems and power electronic equipment, TF20N40-VB is also widely used as a power switching device. It can provide stable performance in high voltage and high frequency working environments, reduce switching losses, and improve thermal management capabilities to ensure the stability of the system under high load operation.
Using SJ_Multi-EPI technology, TF20N40-VB can operate at higher frequencies and is suitable for high-frequency power conversion applications such as high-efficiency power modules and high-voltage switching power supplies. Its lower RDS(ON) and higher leakage current carrying capacity make it particularly suitable for high-voltage modules and power electronic devices that require stable and efficient current control, and can provide high-reliability solutions in high-voltage, high-power application scenarios.
The 650V drain-source voltage of TF20N40-VB makes it an ideal choice for high voltage applications and is widely used in high voltage power management and power control systems. For example, in solar inverters, AC-DC power converters, power distribution modules and other fields, TF20N40-VB can provide stable and reliable voltage control and current switching.
In addition, TF20N40-VB is also very suitable for applications with medium current loads such as power tools, industrial power control systems, battery chargers and motor drive systems. In these applications, TF20N40-VB can provide efficient current control, especially in high voltage environments, effectively reducing power losses and ensuring long-term stable operation of the system.
In inverters, UPS (uninterruptible power supply) systems and power electronic equipment, TF20N40-VB is also widely used as a power switching device. It can provide stable performance in high voltage and high frequency working environments, reduce switching losses, and improve thermal management capabilities to ensure the stability of the system under high load operation.
Using SJ_Multi-EPI technology, TF20N40-VB can operate at higher frequencies and is suitable for high-frequency power conversion applications such as high-efficiency power modules and high-voltage switching power supplies. Its lower RDS(ON) and higher leakage current carrying capacity make it particularly suitable for high-voltage modules and power electronic devices that require stable and efficient current control, and can provide high-reliability solutions in high-voltage, high-power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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