TF13N50-VB Product details
Product introduction:
TF13N50-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 550V and a maximum drain current (ID) of 18A. This product adopts Plannar technology and has a maximum gate-source voltage (VGS) of 30V, which is suitable for high voltage and medium current applications. Its on-resistance (RDS(ON)) is 260mΩ@VGS=10V, which has good power loss characteristics and can effectively reduce energy consumption. TF13N50-VB is mainly used in high-voltage switching applications, suitable for power management, switching power supplies, industrial power control and other fields, providing reliable switching solutions for various high-voltage power control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 550V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 260mΩ@VGS = 10V
- **Maximum drain current (ID): ** 18A
- **Technology: ** Plannar technology
- **Maximum power dissipation (Ptot): ** 40W (depends on heat dissipation conditions)
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** About 3°C/W (source to junction)
- **Maximum Junction Temperature (Tj):** 150°C
Domain and module applications:
# **1. Power management system: **
TF13N50-VB is suitable for switching power supplies (SMPS) and voltage-stabilized power supply modules in power management systems. Due to its high drain-source voltage of 550V, it can operate stably under high voltage input and is suitable for high-efficiency power conversion, voltage regulation and load control. Especially in televisions, communication equipment and industrial power supplies, TF13N50-VB provides stable power conversion and reliable switch control.
# **6. UPS (uninterruptible power supply) system: **
In UPS systems, TF13N50-VB can be used to handle high voltage input, provide reliable current switching and power conversion, and ensure continuous power support for key equipment during power outages. Its high voltage and medium current characteristics are very suitable for the design requirements of UPS systems.
# **7. Battery Management System (BMS): **
TF13N50-VB can be used in battery management systems, especially in applications such as electric vehicles (EV) and power tools. It can stably control the battery charging and discharging process, work effectively under high voltage and high current conditions, and ensure the safe and efficient operation of the battery system.
# **8. Electric Vehicles and Electric Transportation: **
TF13N50-VB can also be used in battery management and charging control systems for electric vehicles (EV) and hybrid electric vehicles (HEV). In these applications, MOSFETs can be used as power switches to achieve battery charging and discharging control and energy recovery management, thereby improving the energy efficiency and operating stability of electric vehicles.
# **9. Consumer Electronics Power Modules: **
In power modules for consumer electronic products such as TVs, audio, computers, and home appliances, TF13N50-VB provides stable power conversion and voltage regulation functions, ensuring that these devices operate stably under high voltage input with low power loss and heat generation.
Summary:
TF13N50-VB is a high-performance single N-channel MOSFET with 550V drain-source voltage and 18A maximum drain current, suitable for power management, switching power supplies, battery management systems, power tools, solar inverters and other fields. It provides excellent switching performance and stable high-voltage working ability, which can ensure high efficiency and stability of the system in various industrial and consumer applications. With its low on-resistance and high voltage tolerance, TF13N50-VB has become an ideal choice in a variety of high-voltage power control modules.
Technical support:
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