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TF12N60L-VB Product details

Product introduction:

Product Introduction

**TF12N60L-VB TO220F N-channel MOSFET** is a **high voltage N-channel MOSFET**, using **Plannar technology**, designed for **high voltage** applications, suitable for power conversion and switching circuits that require large current and high voltage resistance. Its **maximum drain-source voltage** (VDS) is **650V**, enabling it to work stably in a higher voltage environment. The **maximum drain current** (ID) of this MOSFET is **20A**, suitable for applications that handle higher currents.

The **on-resistance (RDS(ON))** of TF12N60L-VB is **320mΩ** @ **VGS = 10V**, which can provide lower power loss while ensuring high efficiency of the system. Its **threshold voltage** (Vth) is **3.5V**, making it compatible with common power control voltages, suitable for a variety of power management and motor drive applications.

This MOSFET adopts **TO220F package**, which has stronger heat dissipation capability and is suitable for the heat dissipation requirements of high-power applications. TF12N60L-VB is suitable for industrial power electronics, inverters, switching power supplies and other fields, especially in environments that require high voltage resistance and medium current carrying.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: TF12N60L-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **320mΩ** @ **VGS = 10V**
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar technology

Domain and module applications:

Application fields and module examples: 1. **Power conversion system**: TF12N60L-VB is widely used in **power converter** and **power supply modules**, especially in **AC-DC converter** and **DC-DC converter**. The **650V** high withstand voltage capability and **20A** high current carrying capacity of this MOSFET enable it to work stably in high voltage power supply environment. Its **320mΩ** on-resistance helps to reduce power loss and improve system efficiency and reliability. 2. **Inverter application**: TF12N60L-VB is suitable for **inverters**, such as switching modules for **solar inverter** or **wind power inverter**. Its high withstand voltage and **large current carrying capacity** can handle the conversion task of high voltage power supply, especially suitable for the field of renewable energy. This MOSFET helps convert **DC** to **AC**, providing efficient power conversion solutions in electric vehicles, renewable energy generation systems, etc.

3. **Motor drive system**:
TF12N60L-VB is also suitable for **motor drive systems**, such as **industrial motor** or **home appliance motor control**. Due to its **650V** high voltage capability, it is suitable for motor control applications that require medium current (such as **20A**) and high voltage. In areas such as power tools, electric pumps and fans, this MOSFET provides efficient drive and control.

4. **Industrial electrical control and protection**:
TF12N60L-VB can be applied to **electrical protection and control systems**, such as **overcurrent protection circuit** or **short-circuit protection circuit**. In these applications, this MOSFET can be used as a switching element in a high voltage environment, providing high-reliability current switching, preventing equipment failure and ensuring system stability.

5. **High-voltage battery management system (BMS)**:
In **electric vehicles** or **energy storage systems**, TF12N60L-VB can be used as a key switching element for **high-voltage battery management systems** (BMS). This MOSFET is capable of withstanding higher voltages (650V) and medium currents (20A), and can effectively manage the battery charging and discharging process, protecting the battery from damage caused by overcurrent or overvoltage.

6. **Electrical isolation and voltage regulation module**:
In **electrical isolation** or **voltage regulation** applications, TF12N60L-VB can be used as a switching element to help isolate high-voltage signals from low-voltage control systems. Its **650V** high withstand voltage capability enables it to handle high-voltage signals from the power network, and is widely used in power distribution systems, electrical controls, and high-voltage power regulation modules.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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