TF11C60-VB Product details
Product introduction:
TF11C60-VB is a single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. Using Plannar technology, this MOSFET performs stably and reliably in high-voltage applications. Its threshold voltage (Vth) is 3.5V, and the gate-source voltage (VGS) can withstand a maximum of ±30V. The on-resistance is 320mΩ@VGS=10V, which enables it to provide excellent performance in medium-power level applications. TF11C60-VB can be widely used in applications requiring high voltage and high current switch control, such as power management, switching power supplies, battery management and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type:** TO220F
- **Configuration:** Single N-channel MOSFET
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 320mΩ@VGS = 10V
- **Maximum drain current (ID):** 20A
- **Technology:** Plannar technology
- **Maximum power dissipation (Ptot):** 40W (depends on heat dissipation conditions)
- **Operating temperature range:** -55°C to +150°C
- **Thermal resistance (RthJC):** About 3.5°C/W (source to junction)
- **Maximum Junction Temperature (Tj): ** 150°C
Domain and module applications:
# **1. Power Management System: **
TF11C60-VB is suitable for various power management applications, such as AC-DC converters, power factor correction (PFC) circuits and power modules. Its 650V drain-source voltage enables it to handle high voltage inputs, and it has good switching characteristics, which can effectively control current transmission and provide efficient power conversion.
# **6. Uninterruptible Power Supply (UPS): **
TF11C60-VB can be widely used in UPS (Uninterruptible Power Supply) systems. It can handle high voltage and high current input and output in UPS systems, ensuring that the system can provide continuous power supply in the event of a power outage. Efficient switching characteristics and low on-resistance help improve the overall efficiency and reliability of the UPS system.
# **7. Solar inverter: **
TF11C60-VB is suitable for high voltage power conversion in solar inverters. Solar systems usually need to convert the DC power generated by photovoltaic panels into AC power, and MOSFET plays an important role in this process. Due to its high withstand voltage (650V) and stable switching characteristics, it can effectively perform power conversion and current control in solar systems.
# **8. Automotive power management: **
In the power management system of electric vehicles (EV) and hybrid electric vehicles (HEV), TF11C60-VB can be used in modules such as battery management, motor drive, and charger control. Its high voltage tolerance and high-efficiency switching control make it suitable for battery charging, energy recovery, and drive control systems in electric vehicles.
# **9. TV and consumer electronics power modules: **
TF11C60-VB is also widely used in power modules for TVs, TV screens, and other consumer electronics. Its high withstand voltage of 650V is suitable for the power adapters and power converters of these products, ensuring the efficient operation of the equipment.
Summary:
As a single N-channel MOSFET with 650V drain-source voltage and 20A maximum drain current, TF11C60-VB is suitable for high voltage applications such as power management, switching power supplies, battery management, power tools, UPS systems, solar inverters, etc. Its low on-resistance and efficient switching characteristics make it excellent in medium to high power applications, which can effectively improve system efficiency and reduce energy loss. TF11C60-VB is an ideal choice for high voltage applications, providing stable and reliable performance and meeting various high voltage power control and conversion needs.
Technical support:
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