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TF10N65-VB Product details
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TF10N65-VB is a high voltage unipolar N-channel MOSFET in a TO220F package, designed for high voltage power management and switching applications. With a drain-source voltage (VDS) of 650V, this MOSFET is suitable for electronic devices and power systems that require high voltage control. With a gate threshold voltage (Vth) of 3.5V, the TF10N65-VB has high voltage withstand capability and stable conduction characteristics. Although its on-resistance (RDS(ON)) is relatively high at 830mΩ (VGS=10V), its maximum leakage current (ID) is 10A, making it suitable for high voltage switching applications with medium current loads. Using Plannar technology, the TF10N65-VB has low switching losses and excellent thermal stability, and can maintain good performance in high-frequency, high-voltage operating environments.
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TF10N65-VB is a high voltage unipolar N-channel MOSFET in a TO220F package, designed for high voltage power management and switching applications. With a drain-source voltage (VDS) of 650V, this MOSFET is suitable for electronic devices and power systems that require high voltage control. With a gate threshold voltage (Vth) of 3.5V, the TF10N65-VB has high voltage withstand capability and stable conduction characteristics. Although its on-resistance (RDS(ON)) is relatively high at 830mΩ (VGS=10V), its maximum leakage current (ID) is 10A, making it suitable for high voltage switching applications with medium current loads. Using Plannar technology, the TF10N65-VB has low switching losses and excellent thermal stability, and can maintain good performance in high-frequency, high-voltage operating environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **ID (maximum drain current)**: 10A
- **Technology**: Plannar technology
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- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 830mΩ@VGS=10V
- **ID (maximum drain current)**: 10A
- **Technology**: Plannar technology
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Domain and module applications：
Example**
TF10N65-VB is suitable for high voltage applications, especially power conversion and power management systems that require 650V withstand voltage. This MOSFET is widely used in high voltage power systems such as AC-DC power converters, power supply modules, and solar inverters. In solar inverters, wind power generation systems, and industrial power control, TF10N65-VB can stably provide high voltage current switching control to ensure stable system operation.
In addition, TF10N65-VB is also widely used in power tools, battery chargers, and some high-power power modules. In these applications, despite its high on-resistance, it can still provide reliable current control through excellent switching performance and withstand voltage capability. In UPS (uninterruptible power supply) systems, inverters, and motor drive systems, TF10N65-VB is also used as a power switching device, especially in application scenarios that require high voltage but medium current. It can effectively transmit and control current and improve system efficiency.
Due to the use of Plannar technology, TF10N65-VB can effectively reduce switching losses in high-frequency and high-voltage working environments, ensuring the long-term stability of the system. Therefore, it is a reliable choice in the fields of industrial automation, communication power modules and high-power power supplies, especially for power modules with medium current requirements and high voltage carrying capacity.
TF10N65-VB is suitable for high voltage applications, especially power conversion and power management systems that require 650V withstand voltage. This MOSFET is widely used in high voltage power systems such as AC-DC power converters, power supply modules, and solar inverters. In solar inverters, wind power generation systems, and industrial power control, TF10N65-VB can stably provide high voltage current switching control to ensure stable system operation.
In addition, TF10N65-VB is also widely used in power tools, battery chargers, and some high-power power modules. In these applications, despite its high on-resistance, it can still provide reliable current control through excellent switching performance and withstand voltage capability. In UPS (uninterruptible power supply) systems, inverters, and motor drive systems, TF10N65-VB is also used as a power switching device, especially in application scenarios that require high voltage but medium current. It can effectively transmit and control current and improve system efficiency.
Due to the use of Plannar technology, TF10N65-VB can effectively reduce switching losses in high-frequency and high-voltage working environments, ensuring the long-term stability of the system. Therefore, it is a reliable choice in the fields of industrial automation, communication power modules and high-power power supplies, especially for power modules with medium current requirements and high voltage carrying capacity.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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