TF10N50FD-VB Product details
Product introduction:
**TF10N50FD-VB** is a high-voltage, single N-channel MOSFET in a TO220F package with a maximum drain-source voltage (VDS) of 650V, suitable for switching applications that require high voltage resistance and reliability. Its maximum drain current (ID) is 10A, the gate threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 830mΩ at VGS=10V. This MOSFET uses Planar technology to optimize its switching characteristics and voltage resistance, making it perform well in medium and high voltage power conversion, load switching, battery management and other occasions. TF10N50FD-VB is suitable for multiple fields, such as power electronics, industrial control, automotive electronics and high-efficiency power systems. It has the advantages of reliability and long life, and is particularly suitable for operation in high voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: TF10N50FD-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Planar
- **Power loss**: Calculated according to operating conditions and ambient temperature
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 125W (with proper heat dissipation)
- **Switching performance**: Good switching characteristics, suitable for medium and high voltage high frequency switching applications
- **Packaging characteristics**: TO220F package, with excellent thermal conductivity, suitable for higher power applications
Domain and module applications:
1. **High-voltage power management system**:
TF10N50FD-VB is particularly suitable for high-voltage power management systems. It can work stably at a high voltage of 650V and is suitable for high-efficiency DC-DC converters and AC-DC power supplies. It can provide efficient power conversion in high-voltage environments and is particularly suitable for industrial power supplies, solar panels, and power transmission systems. The high voltage withstand capability of this MOSFET ensures system stability and effectively reduces energy loss.
2. **Power tools and home appliances**:
In power tools and large home appliances (such as motor drives, battery chargers, and home appliance control systems), TF10N50FD-VB MOSFET can be used as a high-current switching element. It can withstand high operating voltages and currents, and is very suitable for high-voltage DC motor drives for power tools, power regulation for automation control systems, etc. Due to its low on-resistance, it can reduce energy loss and improve the efficiency of equipment.
3. **Automotive Electronic Systems**:
TF10N50FD-VB can be used in automotive electronic systems, especially in battery management systems (BMS), electric vehicle (EV) charging systems and inverter applications. Due to its high voltage withstand capability of up to 650V, it can handle the current of high-voltage battery packs and provide efficient power switching functions during the charging/discharging process. In addition, its high current capability and good thermal stability make it suitable for use in demanding automotive power supplies and drive modules.
4. **Industrial Control and Automation**:
In industrial control systems, TF10N50FD-VB can be used for motor drives, load switches, power regulation and high-voltage switching systems. Whether it is an automated production line, a transmission system, or a control drive module for an electric motor, TF10N50FD-VB can provide efficient and stable switching operations under high voltage and high current environments. Due to its high voltage and high current resistance, it can work stably and long-term in harsh industrial environments to ensure efficient operation of the equipment.
5. **Power Conversion and Inverter Applications**:
TF10N50FD-VB plays a key role in efficient power conversion systems, especially in inverters in renewable energy systems such as wind and solar energy. It can provide excellent switching performance under high voltage conditions to ensure efficient conversion and transmission of power, especially in medium and high voltage inverters, power regulation and battery energy storage systems, and is widely used in renewable energy and efficient power management systems.
6. **Battery Management System (BMS)**:
Due to its 10A large current carrying capacity and high voltage resistance, TF10N50FD-VB can be widely used in battery management systems (BMS), especially in the charge and discharge management of high-power battery packs such as electric vehicles and power tools. MOSFET as a switching element can accurately control the charging and discharging process of the battery, prevent overcurrent or overvoltage conditions, and ensure safe and reliable operation of the system.
7. **High-power LED driver**:
In high-power LED lighting systems, TF10N50FD-VB can provide stable power regulation in high-current, high-power environments due to its low on-resistance and high voltage resistance. It can be used for power conversion and regulation of LED drivers to ensure that LED lamps work in an efficient and stable state while reducing energy loss.
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