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TDM3412-VB Product details

Product introduction:

TDM3412-VB MOSFET Product Introduction

TDM3412-VB is a half-bridge N+N type MOSFET in DFN8(3x3)-C package, designed for high-efficiency power management and power conversion applications. Its maximum drain-to-source voltage (V_DS) is 30V, suitable for low voltage and medium power applications. Using Trench technology, it provides lower on-resistance (R_DS(ON)) and excellent switching performance, especially when V_GS=10V, the N-channel on-resistance is only 16mΩ and the P-channel is 40mΩ, which can significantly reduce power loss and improve system efficiency. The maximum drain current (I_D) of TDM3412-VB is 28A, which is suitable for applications with high frequency and high current requirements, such as DC-DC converters, battery management systems, power tools and power regulation modules for electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 28A 16/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3)-C Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 28A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3)-C Half-Bridge-N+N 30V 1.7V 28A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3)-C Half-Bridge-N+N
TDM3412-VB MOSFET Detailed parameter description

- **Package type**: DFN8(3x3)-C
- **Configuration**: Half-Bridge N+N-Channel
- **Drain to source voltage (V_DS)**: 30V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- N-channel: 22mΩ @ V_GS = 4.5V, 16mΩ @ V_GS = 10V
- P-channel: 45mΩ @ V_GS = 4.5V, 40mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 28A
- **Technology**: Trench technology (low on-resistance and fast switching characteristics)
- **Package**: DFN8(3x3)-C, small size and good heat dissipation performance, suitable for space-constrained applications.

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Domain and module applications:

Application fields and module examples

1. **DC-DC converter**:
TDM3412-VB MOSFET is particularly suitable for low voltage, high frequency DC-DC converter applications. Its low on-resistance and high switching frequency can effectively reduce energy loss and improve conversion efficiency, especially in applications with high voltage conversion efficiency requirements, such as communication equipment, computer power supplies, LED driver power supplies, etc. TDM3412-VB can effectively improve the overall performance of the power module in these applications and provide stable current output.

2. **Battery Management System (BMS)**:
In the battery management system (BMS), TDM3412-VB has excellent current control performance and can carry up to 28A of current. It is suitable for battery charge and discharge control, overcharge and overdischarge protection, and battery power monitoring functions. Especially in electric vehicles, portable devices, and energy storage systems, TDM3412-VB can effectively regulate battery current, extend battery life, and improve charging efficiency.

3. **Power tools and portable power devices**:
Power tools and portable power devices have high requirements for battery management and efficient power regulation. TDM3412-VB is suitable for power conversion and battery control systems in these devices, especially in applications such as power tools and electric scooters. It can withstand large currents and ensure stable operation under high load conditions. In addition, its low on-resistance helps reduce energy loss, thereby increasing battery life.

4. **Electric Vehicle (EV) Battery Charging and Power Management**:
In electric vehicles (EV) and electric vehicle charging systems, TDM3412-VB can be used in DC-DC converters, battery charging management systems, and power regulation modules for electric vehicles. It can effectively regulate battery current, improve charging efficiency, and provide stable and reliable current control during battery charging. It is suitable for fast charging systems of electric vehicles and power management of other vehicles.

5. **Low-voltage power supply systems and consumer electronic devices**:
TDM3412-VB is widely used in low-voltage power supply systems and power management modules of various consumer electronic devices, such as mobile phone chargers, electric toothbrushes, portable audio, etc. Because it adapts to the low voltage range of 30V and can provide up to 28A of current, it can meet the needs of these devices for small-sized, high-efficiency power supplies.

6. **High-frequency switching power supplies and power amplifiers**:
The high switching frequency and low on-resistance of TDM3412-VB make it very suitable for applications such as high-frequency switching power supplies and power amplifiers. It can effectively reduce switching losses and improve the overall efficiency of the system, and is suitable for communication base station power supplies, radio frequency (RF) amplifiers and other applications that require frequent switching and high current loads.

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In summary, TDM3412-VB MOSFET is a high-efficiency, low-power, low-voltage half-bridge structure MOSFET suitable for large currents. It is widely used in DC-DC converters, battery management systems, power tools, electric vehicles, and consumer electronic devices to help improve power efficiency and battery life. Its small DFN8 (3x3) -C package and excellent performance characteristics make it an ideal choice for various power management modules and high-frequency switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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