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T95N02RG-VB Product details

Product introduction:

Product Introduction:
T95N02RG-VB is a single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, the maximum gate-source voltage (VGS) is ±20V, and the gate threshold voltage (Vth) ranges from 0.5V to 1.5V. The on-resistance (RDS(ON)) of this MOSFET is very low, 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, which can provide extremely low conduction losses at low voltages and significantly improve energy efficiency. The maximum drain current (ID) is 100A, making it suitable for high current applications. The use of Trench technology optimizes its switching performance, especially in high-frequency and high-efficiency switching scenarios. T95N02RG-VB can be widely used in power management, load switching, battery management and other electronic systems that require high-efficiency and high-current switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description:
- **Model**: T95N02RG-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: Varies according to operating conditions and ambient temperature
- **Switching performance**: High efficiency and low loss, suitable for high-frequency switching applications
- **Typical applications**: Power management, load switching, battery management, DC power conversion, etc.
- **Packaging features**: TO252 package, suitable for medium current load applications, small package, easy to dissipate heat.

Domain and module applications:

Applications and module examples:

1. **Power management system**:
T95N02RG-VB MOSFET is suitable for low voltage, high current power management applications. Due to its low on-resistance and efficient switching performance, this MOSFET is particularly suitable for high frequency power conversion, voltage regulated power modules and DC-DC converters. Especially in high efficiency power systems, it can reduce energy loss and improve the efficiency of the overall system. This MOSFET can also be used for power management in battery-powered devices to ensure efficient power conversion when the battery is fully charged.

2. **Load switch and protection circuit**:
T95N02RG-VB is suitable for high current load switching due to its low RDS(ON) characteristics. This MOSFET can be used in intelligent power switches, load switching, overcurrent protection circuits, etc., especially for high current load switches. It can respond quickly to load changes in these applications and protect the circuit from damage caused by overcurrent or short circuit.

3. **Battery Management System (BMS)**:
In a battery management system, the T95N02RG-VB MOSFET can be used to control the charging and discharging process of the battery. With a maximum drain current of up to 100A, it is suitable for high-power battery management applications to ensure efficient charging and discharging of the battery pack, especially in high-current battery packs such as power tools and electric vehicles. The low RDS(ON) of this MOSFET minimizes the power loss of the battery management system, prolongs the battery life and improves the system efficiency.

4. **High-efficiency DC-DC converter**:
The T95N02RG-VB is suitable for high-efficiency DC-DC power converters, especially for applications that require fast switching, such as industrial power supplies, consumer electronics, LED drivers, etc. Due to its very low on-resistance, it can significantly reduce power losses and improve conversion efficiency when operating at high frequencies. The high current handling capability of this MOSFET enables it to operate reliably under high current loads, especially suitable for use in uninterruptible power supplies (UPS) and power conversion modules.

5. **Automotive Electronic Systems**:
T95N02RG-VB MOSFET is widely used in automotive electronic systems, especially in battery management systems, on-board chargers and power conversion modules of electric vehicles. Due to its high current carrying capacity (100A), it can meet the needs of automotive electronic systems for high current, and has a low on-resistance, ensuring efficient operation of the system. This MOSFET can provide efficient power management, reduce the power consumption of automotive systems, and improve driving experience and endurance.

6. **High-efficiency Switching Power Supply (SMPS)**:
In switching power supplies (SMPS), the low on-resistance and high current carrying capacity of T95N02RG-VB make it an ideal choice. It can support high-frequency switching operations, reduce losses, and ensure that the switching power supply maintains efficient operation while providing stable voltage output. In high-performance computer power supplies, server power supplies, audio amplifier power supplies and other equipment, T95N02RG-VB provides efficient and stable power conversion.

7. **Power drive and motor control**:
T95N02RG-VB can also be used in the control and drive systems of small and medium power motors, especially in applications that require high current drive, such as motor drive in household appliances, load drive in industrial equipment, etc. Its high current carrying capacity enables it to stably drive the motor and is suitable for various motor control systems to ensure drive accuracy and system stability.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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