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T70N03G-VB TO251 Product details
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T70N03G-VB is a unipolar N-channel MOSFET in TO251 package, designed for low voltage, high current, high efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for medium and low voltage power control, power management and battery drive systems. The Vth (gate threshold voltage) of T70N03G-VB is 1.7V, and it has an extremely low on-resistance (RDS(ON)) of 3.5mΩ (VGS=10V) and 4.5mΩ (VGS=4.5V), which can significantly reduce conduction losses and improve system efficiency. Its maximum drain current (ID) is 100A, which enables it to carry a large current load and is suitable for applications requiring high current output. The T70N03G-VB uses Trench technology, which has low switching losses and excellent thermal stability, and can provide stable and reliable performance under high frequency and high current conditions.
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T70N03G-VB is a unipolar N-channel MOSFET in TO251 package, designed for low voltage, high current, high efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for medium and low voltage power control, power management and battery drive systems. The Vth (gate threshold voltage) of T70N03G-VB is 1.7V, and it has an extremely low on-resistance (RDS(ON)) of 3.5mΩ (VGS=10V) and 4.5mΩ (VGS=4.5V), which can significantly reduce conduction losses and improve system efficiency. Its maximum drain current (ID) is 100A, which enables it to carry a large current load and is suitable for applications requiring high current output. The T70N03G-VB uses Trench technology, which has low switching losses and excellent thermal stability, and can provide stable and reliable performance under high frequency and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON)**: 4.5mΩ@VGS=4.5V; 3.5mΩ@VGS=10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench technology
**
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON)**: 4.5mΩ@VGS=4.5V; 3.5mΩ@VGS=10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench technology
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Domain and module applications：
Example**
T70N03G-VB is widely used in low and medium voltage power management and high current switching applications due to its high current carrying capacity and low on-resistance. In DC-DC converters, AC-DC power supplies, LED drive circuits and battery management systems (BMS), T70N03G-VB can effectively improve system efficiency and reduce power loss. It is particularly suitable for power tools, electric vehicle chargers, solar inverters and other fields, reducing the overall loss of the system through efficient power conversion.
With a maximum leakage current of 100A, T70N03G-VB performs well in drive circuits with high current loads, such as in motor drives, battery power management and high power switching power supplies. The low RDS(ON) characteristics of this MOSFET also make it perform well in high-frequency switching power supplies, computer power modules and communication power supplies, which can reduce power loss and optimize system performance. In addition, it is also widely used in uninterruptible power supply (UPS) systems and efficient industrial automation power control modules, which can effectively improve the efficiency and reliability of the entire system.
T70N03G-VB is widely used in low and medium voltage power management and high current switching applications due to its high current carrying capacity and low on-resistance. In DC-DC converters, AC-DC power supplies, LED drive circuits and battery management systems (BMS), T70N03G-VB can effectively improve system efficiency and reduce power loss. It is particularly suitable for power tools, electric vehicle chargers, solar inverters and other fields, reducing the overall loss of the system through efficient power conversion.
With a maximum leakage current of 100A, T70N03G-VB performs well in drive circuits with high current loads, such as in motor drives, battery power management and high power switching power supplies. The low RDS(ON) characteristics of this MOSFET also make it perform well in high-frequency switching power supplies, computer power modules and communication power supplies, which can reduce power loss and optimize system performance. In addition, it is also widely used in uninterruptible power supply (UPS) systems and efficient industrial automation power control modules, which can effectively improve the efficiency and reliability of the entire system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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