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T6NQ-VB Product details
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Product Introduction
**T6NQ-VB SOT223 MOSFET** is an **N-channel MOSFET**, using **Trench** technology, designed for low-power applications and high-efficiency switching. The **maximum drain-source voltage** (VDS) of this device is **100V**, and the **maximum drain current** (ID) is **5A**, which is suitable for low and medium power current switching applications. Its **threshold voltage** (Vth) is **1.8V**, and the gate-source voltage (VGS) can reach **±20V** at most, which gives it a wide voltage adjustment range and can adapt to different driving requirements.
The on-resistance (**RDS(ON)**) of T6NQ-VB is **100mΩ** at **VGS = 10V** and **120mΩ** at **VGS = 4.5V**, which ensures that it has low power loss during normal operation. The device is packaged in **SOT223**, which is suitable for applications with low to medium power, high density and limited heat dissipation space. With its compact package and efficient performance, T6NQ-VB is widely used in various electronic devices, especially in low-power switching, power management and small power converters.
**T6NQ-VB SOT223 MOSFET** is an **N-channel MOSFET**, using **Trench** technology, designed for low-power applications and high-efficiency switching. The **maximum drain-source voltage** (VDS) of this device is **100V**, and the **maximum drain current** (ID) is **5A**, which is suitable for low and medium power current switching applications. Its **threshold voltage** (Vth) is **1.8V**, and the gate-source voltage (VGS) can reach **±20V** at most, which gives it a wide voltage adjustment range and can adapt to different driving requirements.
The on-resistance (**RDS(ON)**) of T6NQ-VB is **100mΩ** at **VGS = 10V** and **120mΩ** at **VGS = 4.5V**, which ensures that it has low power loss during normal operation. The device is packaged in **SOT223**, which is suitable for applications with low to medium power, high density and limited heat dissipation space. With its compact package and efficient performance, T6NQ-VB is widely used in various electronic devices, especially in low-power switching, power management and small power converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: T6NQ-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- **120mΩ** @ **VGS = 4.5V**
- **100mΩ** @ **VGS = 10V**
- **Maximum Drain Current (ID)**: 5A
- **Technology**: Trench technology
- **Model**: T6NQ-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- **120mΩ** @ **VGS = 4.5V**
- **100mΩ** @ **VGS = 10V**
- **Maximum Drain Current (ID)**: 5A
- **Technology**: Trench technology
Domain and module applications：
Application Fields and Module Examples
1. **Low Power Management System**:
T6NQ-VB is suitable for low power power management systems such as **DC-DC converters** and **Battery Management Systems (BMS)**. Due to its low on-resistance (**100mΩ**), T6NQ-VB can reduce power loss in high-efficiency power conversion, thereby improving system efficiency. It is widely used in power management of small devices, such as portable devices, wireless charging modules, portable power banks, etc.
2. **Switching Power Supply**:
T6NQ-VB can be used as a core component of **switching power supplies** (such as flyback converters, boost/buck converters, etc.). In these applications, low **RDS(ON)** and **high efficiency** are very important performance parameters. Its on-resistance of **100mΩ** at **VGS = 10V** provides fast response in low power situations and reduces power loss under high-frequency switching. This feature makes it ideal for power management in consumer electronics, telecommunications equipment, and small home appliances.
3. **Battery-Powered Devices**:
T6NQ-VB is also suitable for battery-powered systems. Due to its **low power loss** and low **Vth**, it can effectively manage the battery charge and discharge process, improving the battery's efficiency and life. It is particularly suitable for **portable battery devices**, smart home devices, and **power tools**.
4. **Consumer Electronics**:
In consumer electronics such as smartphones, tablets, and wearable devices, T6NQ-VB is often used in power management modules, LED drivers, and other power switching applications due to its small **SOT223 package** and high performance. It can operate stably in these low-power, high-frequency applications, providing precise current control while maintaining low heat generation.
5. **Load Switching and Current Switching**:
This MOSFET is suitable for small **load switching** and **current switching** applications. Its low on-resistance ensures fast and efficient current switching, especially in battery-powered electronic products, which can effectively switch load current, reduce current loss, and extend the battery life of the device. It is used in **consumer electronic products**, such as smart lamps, wireless sensor network (WSN) devices, etc.
6. **LED drive circuit**:
In LED drive circuits, T6NQ-VB is widely used as a switching element. Its low **RDS(ON)** characteristic minimizes energy loss in the LED drive power supply, ensuring high efficiency and long life of LED display devices. It is suitable for various types of low-power **LED drivers**, such as backlights, indoor lighting, and dimmable LED lamps.
1. **Low Power Management System**:
T6NQ-VB is suitable for low power power management systems such as **DC-DC converters** and **Battery Management Systems (BMS)**. Due to its low on-resistance (**100mΩ**), T6NQ-VB can reduce power loss in high-efficiency power conversion, thereby improving system efficiency. It is widely used in power management of small devices, such as portable devices, wireless charging modules, portable power banks, etc.
2. **Switching Power Supply**:
T6NQ-VB can be used as a core component of **switching power supplies** (such as flyback converters, boost/buck converters, etc.). In these applications, low **RDS(ON)** and **high efficiency** are very important performance parameters. Its on-resistance of **100mΩ** at **VGS = 10V** provides fast response in low power situations and reduces power loss under high-frequency switching. This feature makes it ideal for power management in consumer electronics, telecommunications equipment, and small home appliances.
3. **Battery-Powered Devices**:
T6NQ-VB is also suitable for battery-powered systems. Due to its **low power loss** and low **Vth**, it can effectively manage the battery charge and discharge process, improving the battery's efficiency and life. It is particularly suitable for **portable battery devices**, smart home devices, and **power tools**.
4. **Consumer Electronics**:
In consumer electronics such as smartphones, tablets, and wearable devices, T6NQ-VB is often used in power management modules, LED drivers, and other power switching applications due to its small **SOT223 package** and high performance. It can operate stably in these low-power, high-frequency applications, providing precise current control while maintaining low heat generation.
5. **Load Switching and Current Switching**:
This MOSFET is suitable for small **load switching** and **current switching** applications. Its low on-resistance ensures fast and efficient current switching, especially in battery-powered electronic products, which can effectively switch load current, reduce current loss, and extend the battery life of the device. It is used in **consumer electronic products**, such as smart lamps, wireless sensor network (WSN) devices, etc.
6. **LED drive circuit**:
In LED drive circuits, T6NQ-VB is widely used as a switching element. Its low **RDS(ON)** characteristic minimizes energy loss in the LED drive power supply, ensuring high efficiency and long life of LED display devices. It is suitable for various types of low-power **LED drivers**, such as backlights, indoor lighting, and dimmable LED lamps.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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