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T6N15G-VB Product details
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T6N15G-VB MOSFET Product Introduction
T6N15G-VB is a single-tube N-type MOSFET in TO252 package, designed for high-efficiency and high-reliability power management and drive applications. Its maximum drain-source voltage (Vds) is 150V, suitable for medium and high voltage circuits. This MOSFET uses advanced Trench technology to optimize switching performance and reduce on-resistance (Rds(on)). When Vgs=10V, Rds(on) is 74mΩ, providing low-loss and high-efficiency power conversion capabilities. Its maximum drain current (Id) can reach 25.4A, suitable for applications requiring high current drive.
T6N15G-VB is a single-tube N-type MOSFET in TO252 package, designed for high-efficiency and high-reliability power management and drive applications. Its maximum drain-source voltage (Vds) is 150V, suitable for medium and high voltage circuits. This MOSFET uses advanced Trench technology to optimize switching performance and reduce on-resistance (Rds(on)). When Vgs=10V, Rds(on) is 74mΩ, providing low-loss and high-efficiency power conversion capabilities. Its maximum drain current (Id) can reach 25.4A, suitable for applications requiring high current drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | 74mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
T6N15G-VB MOSFET Detailed Parameter Description
| Parameters| Description|
|---------------------|----------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (Vds)** | 150V |
| **Gate-Source Voltage (Vgs)** | ±20V |
| **Threshold Voltage (Vth)** | 2.5V |
| **On-Resistance (Rds(on))** | 74mΩ @ Vgs=10V |
| **Maximum Drain Current (Id)** | 25.4A |
| **Technology** | Trench Technology|
| Parameters| Description|
|---------------------|----------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (Vds)** | 150V |
| **Gate-Source Voltage (Vgs)** | ±20V |
| **Threshold Voltage (Vth)** | 2.5V |
| **On-Resistance (Rds(on))** | 74mΩ @ Vgs=10V |
| **Maximum Drain Current (Id)** | 25.4A |
| **Technology** | Trench Technology|
Domain and module applications：
T6N15G-VB MOSFET application areas and module examples
T6N15G-VB MOSFET is suitable for the following areas and modules:
1. **Power management system**: Due to its low on-resistance and high current handling capability, T6N15G-VB is well suited for power conversion, DC-DC converters, and voltage regulation modules. These applications typically require handling high currents and high drain-source voltages, and the excellent switching performance of MOSFETs can significantly improve the overall efficiency of the system.
2. **Battery management system (BMS)**: In battery charge and discharge management systems, the high current carrying capacity of T6N15G-VB makes it an ideal choice, capable of efficiently controlling the current during battery charging while ensuring stable operation under overload conditions.
3. **Electric vehicle (EV) drive system**: In electric vehicles, T6N15G-VB can be used in motor control modules and power inverters to handle high voltage and high current requirements while providing efficient energy conversion and thermal management capabilities.
4. **Industrial Automation Control**: In industrial robots and automation equipment, T6N15G-VB can be used for servo motor drives, power switches, and other power conversion modules, especially for applications that require fast switching and high power efficiency.
5. **Consumer Electronic Devices**: In mobile devices and portable electronic products, T6N15G-VB can be used in power management systems to improve product battery life and charging efficiency, and is suitable for use in smartphones, tablets, and other mobile devices.
In summary, as a high-performance N-type MOSFET, T6N15G-VB is suitable for a wide range of power management, drive systems, and high-performance modules, and can provide excellent electrical performance and thermal management solutions in multiple fields.
T6N15G-VB MOSFET is suitable for the following areas and modules:
1. **Power management system**: Due to its low on-resistance and high current handling capability, T6N15G-VB is well suited for power conversion, DC-DC converters, and voltage regulation modules. These applications typically require handling high currents and high drain-source voltages, and the excellent switching performance of MOSFETs can significantly improve the overall efficiency of the system.
2. **Battery management system (BMS)**: In battery charge and discharge management systems, the high current carrying capacity of T6N15G-VB makes it an ideal choice, capable of efficiently controlling the current during battery charging while ensuring stable operation under overload conditions.
3. **Electric vehicle (EV) drive system**: In electric vehicles, T6N15G-VB can be used in motor control modules and power inverters to handle high voltage and high current requirements while providing efficient energy conversion and thermal management capabilities.
4. **Industrial Automation Control**: In industrial robots and automation equipment, T6N15G-VB can be used for servo motor drives, power switches, and other power conversion modules, especially for applications that require fast switching and high power efficiency.
5. **Consumer Electronic Devices**: In mobile devices and portable electronic products, T6N15G-VB can be used in power management systems to improve product battery life and charging efficiency, and is suitable for use in smartphones, tablets, and other mobile devices.
In summary, as a high-performance N-type MOSFET, T6N15G-VB is suitable for a wide range of power management, drive systems, and high-performance modules, and can provide excellent electrical performance and thermal management solutions in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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