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T60N02R-VB TO252 Product details

Product introduction:

T60N02R-VB MOSFET Product Introduction

T60N02R-VB is a unipolar N-channel MOSFET in TO252 package, designed for high-efficiency power management, switching circuits and power control applications. With a drain-to-source voltage (V_DS) of 30V and a maximum drain current (I_D) of 80A, this MOSFET is suitable for medium-power applications, especially in power tools, power management systems, chargers, battery management and other occasions. Using advanced Trench technology, T60N02R-VB MOSFET has a very low on-resistance (R_DS(ON)), which is 5mΩ at V_GS=10V and 6mΩ at V_GS=4.5V, which can significantly reduce power loss and improve the conversion efficiency of the system. Its threshold voltage (V_th) is 1.7V, which can provide stable switching performance at a lower driving voltage, making it suitable for low-power and high-efficiency power systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
T60N02R-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain to source voltage (V_DS)**: 30V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench
- **Power loss**: Low, suitable for high current applications
- **Switching characteristics**: Low on-resistance, high-speed switching, suitable for high-performance systems

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Domain and module applications:

Applications and module examples: 1. **Power management system (DC-DC converter)**:
T60N02R-VB MOSFET is widely used in DC-DC converters, especially in power systems that require high efficiency and low power loss. Its low on-resistance (5mΩ @ V_GS=10V) ensures that energy loss is minimized during power conversion, and is particularly suitable for systems such as LED driver power supplies, low-power battery chargers, and power amplifiers. This MOSFET can significantly improve power conversion efficiency, reduce heat loss, and ensure the stability and efficient operation of the power system.

2. **Battery management system (BMS)**:
T60N02R-VB MOSFET is very suitable for battery management systems (BMS), especially in the process of battery charge and discharge control. Its low on-resistance characteristic (6mΩ @ V_GS=4.5V) can help achieve efficient current control and reduce power loss. The MOSFET's 80A maximum drain current carrying capacity enables it to efficiently manage high current charging and discharging, making it particularly suitable for applications that require high current and high efficiency battery management, such as power tools, electric vehicles, and battery energy storage systems.

3. **Power Tools and Power Equipment**:
In power tools and power equipment, the T60N02R-VB MOSFET can be used as part of the motor drive system to provide efficient current switching capabilities and reduce power losses in the system. Its low on-resistance and high current carrying capacity make it an ideal choice for power tools such as electric drills, electric saws, and electric screwdrivers. The high switching frequency and low temperature rise characteristics of the MOSFET enable it to work stably for a long time, improving the performance and efficiency of electric equipment.

4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
The T60N02R-VB has important applications in the battery management system (BMS), chargers, and motor drive systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Its high current carrying capacity of 80A and low on-resistance enable it to efficiently manage the battery charging and discharging process, optimize the efficiency of battery energy use, and ensure the stability of the system. In the power system of electric vehicles, the T60N02R-VB can provide efficient power conversion, extend battery life, and improve the vehicle's power performance.

5. **Solar inverters and renewable energy systems**:
T60N02R-VB MOSFET is suitable for solar inverters and other renewable energy systems, especially playing a key role in power conversion. Its low on-resistance and high switching efficiency enable the inverter to convert DC to AC with higher efficiency, which is suitable for large-scale solar photovoltaic systems, wind power generation systems, etc. T60N02R-VB MOSFET can significantly improve the conversion efficiency of renewable energy systems, reduce energy losses, and ensure stable operation under high current conditions.

6. **Industrial Automation and Motor Control**:
T60N02R-VB MOSFET is widely used in the fields of industrial automation and motor control, especially in inverters and motor drive systems. Its low on-resistance (5mΩ @ V_GS=10V) can reduce power loss in the motor drive system and improve the efficiency of the drive system. The high current carrying capacity (80A) of MOSFET enables it to meet the needs of high-power, high-precision current control in industrial automation equipment, and is widely used in high-power motor drive systems such as automated production lines, robot control, and power tools.

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T60N02R-VB MOSFET is suitable for a variety of high-efficiency, high-power applications due to its low on-resistance, low power loss, and high current handling capability. Whether in power management, battery management, power tools, electric vehicles, solar inverters, or industrial automation control systems, it can provide excellent performance and help the system achieve higher efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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