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T23N03-VB TO263 Product details

Product introduction:

Product Introduction:
T23N03-VB is a single N-channel MOSFET in TO263 package with high current carrying capacity and excellent switching performance. It is widely used in various power management and power control systems. With a drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V, the device is suitable for medium and low voltage, high current applications. The on-resistance of T23N03-VB is very low (RDS(ON) is 18mΩ @ VGS = 4.5V, 12mΩ @ VGS = 10V), which means it can provide efficient current transmission with low current loss. The maximum drain current (ID) is 50A, making it an ideal choice for high power switching applications. Using advanced Trench technology, this MOSFET performs well in high current switching and high frequency applications, reducing losses and improving system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 50A 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description:
- **Model**: T23N03-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C (specific value depends on the application environment)
- **Switching characteristics**: high efficiency and low loss, suitable for high frequency switching applications

Domain and module applications:

Applications and module examples:

1. **DC-DC converter**:
The low on-resistance and high current carrying capacity of T23N03-VB make it very suitable for DC-DC converters. Its low RDS(ON) can effectively reduce switching losses and improve conversion efficiency. This MOSFET performs particularly well in high-frequency, high-efficiency DC-DC conversion applications and is widely used in power adapters, battery chargers, and power modules for embedded systems.

2. **Power management system**:
In power management systems, T23N03-VB can be used for battery management, power monitoring, and voltage regulation systems. Due to its low RDS(ON) and high current handling capability, it is suitable for intelligent power devices such as mobile power supplies, UPS (uninterruptible power supply) systems, etc., to help ensure that the system can still work stably under high current loads and improve power efficiency.

3. **Power tools and home appliances**:
T23N03-VB is also widely used in power tools and home appliances, especially those with high requirements for power conversion and current control. In power tools, such as electric drills and cutting tools, this MOSFET can efficiently regulate the motor current, ensure the high-efficiency output of the tool, reduce heat loss and increase the service life of the equipment.

4. **LED driver power**:
In LED lighting applications, T23N03-VB MOSFET can be used in driver power modules to provide stable current control. Due to its low on-resistance, it can effectively control the current of LED lamps and reduce power loss, thereby improving the overall efficiency and light efficiency of the LED system. It is widely used in industrial lighting, automotive lighting and other energy-saving lighting fields.

5. **Electric Vehicles and Battery Management Systems (BMS)**:
In the battery management systems (BMS) of electric vehicles (EVs) and hybrid electric vehicles (HEVs), the T23N03-VB can precisely regulate the charge and discharge current of the battery pack due to its high current carrying capacity. This is essential for extending battery life, improving charging efficiency and system stability. It can also be used in battery charging modules of electric vehicles to improve charging efficiency and reduce energy loss.

6. **Automotive Power and Onboard Systems**:
The T23N03-VB can also be applied to automotive power systems such as onboard inverters and battery protection circuits. In high-current power conversion and battery management, low RDS(ON) and high current carrying capacity can ensure stable operation of the vehicle electrical system under high loads, optimize battery performance and improve energy efficiency.

7. **Battery Chargers and Power Banks**:
In portable battery chargers and power banks, the T23N03-VB MOSFET can be used for efficient current management. Its low on-resistance ensures efficient charging at high current loads and reduces heat loss, helping to extend the life of the charger and battery.

These applications demonstrate the wide range of uses of the T23N03-VB MOSFET in a variety of high current, high power and high efficiency applications. It is an indispensable key component in power management, power conversion, power tools and various intelligent electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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