T23N03-VB TO252 Product details
Product introduction:
T23N03-VB is a unipolar N-channel MOSFET in TO252 package with a drain-to-source voltage (V_DS) of 30V and a maximum drain current (I_D) of 70A. This MOSFET adopts advanced Trench technology to provide low on-resistance (R_DS(ON)), which is 7mΩ at V_GS=10V and 9mΩ at V_GS=4.5V, and can provide high efficiency in high current and high frequency applications. Its threshold voltage (V_th) is 1.7V, which is suitable for power management, battery management and high-efficiency switching circuits. With its excellent conductivity, fast switching characteristics and low power loss, T23N03-VB MOSFET is widely used in power modules, inverters, power tools and other products with low to medium power requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain to source voltage (V_DS)**: 30V
- **Gate to source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
- **Power loss**: Very low, especially suitable for high current applications
- **Switching characteristics**: Low on-resistance, fast switching
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Domain and module applications:
1. **DC-DC converters and power management systems**:
T23N03-VB is suitable for DC-DC converters and power management modules, especially in low to medium power applications. Its low on-resistance enables it to significantly reduce the power loss generated during the switching process, thereby improving the overall power efficiency. Common applications include portable battery-powered devices, server power modules, and other low-voltage power systems.
2. **Battery Management System (BMS)**:
In the battery management system, the T23N03-VB MOSFET can efficiently control the charging and discharging process of the battery. With its low on-resistance, the MOSFET can efficiently transmit current while reducing the heat generated during the battery management process and improving the thermal management performance of the system. It is particularly suitable for applications such as lithium battery management systems and intelligent battery management modules.
3. **Power Tools and Small Electric Equipment**:
T23N03-VB is widely used in power tools and small electric equipment, especially in drive systems that require high current switching. Its low on-resistance and high current carrying capacity make it ideal for applications such as driving motors or controlling high-frequency currents, which can improve the efficiency and service life of power tools.
4. **Automotive electronics and power systems**:
In the field of automotive electronics, T23N03-VB can be used in battery charging systems, motor control systems, and energy recovery systems. Its efficient switching characteristics and low on-resistance help reduce power losses in automotive electrical systems, improve overall efficiency and battery life, and are particularly suitable for battery management and motor drive modules in new energy vehicles (EVs).
5. **Inverters and power conversion equipment**:
T23N03-VB also performs well in small inverters and power conversion equipment, especially in solar inverters, UPS systems, and other low- to medium-power energy conversion equipment. Its fast switching capability and low R_DS(ON) characteristics enable it to improve the system's power conversion efficiency, especially reducing unnecessary energy losses in high-frequency switching applications.
Through these application examples, T23N03-VB MOSFET demonstrates its excellent performance in multiple fields, especially in power management, battery control, power tools, electric vehicles and inverters, and has a wide range of applicability.
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