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T22N50-VB Product details

Product introduction:

Product Introduction:

T22N50-VB is a high voltage, low on-resistance single N-channel MOSFET in TO220 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, this MOSFET is suitable for high voltage power supplies, motor drives and power conversion systems. Its lower on-resistance (RDS(ON) = 160mΩ @ VGS=10V) can effectively reduce conduction losses and improve overall efficiency. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and thermal management capabilities, and is widely used in high voltage power conversion and current control fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Power dissipation**: The specific value depends on the application environment. Usually, the data sheet provides the maximum power consumption parameters.

Domain and module applications:

Applications and modules:

1. **High-voltage power conversion: **
T22N50-VB plays an important role in efficient power conversion modules, especially in switch mode power supplies (SMPS) and power factor correction (PFC) modules. Its maximum drain-source voltage of up to 650V makes it very suitable for applications that need to handle higher voltages, such as AC to DC (AC/DC) and DC to DC (DC/DC) converters. Its low on-resistance (RDS(ON)) helps reduce losses when current passes through and improves conversion efficiency, especially in application scenarios that require high efficiency and stability.

2. **Motor drive: **
T22N50-VB is suitable for motor drive systems, especially in inverters and motor control modules. In these applications, it can efficiently switch the motor power supply to ensure smooth operation of the motor under different loads. Because this MOSFET provides high current carrying capacity and low on-resistance, it is particularly suitable for industrial motor drive systems that require high current, such as air conditioners, power tools, and automation equipment.

3. **Electric and hybrid vehicles: **
T22N50-VB is also widely used in the power control systems of electric vehicles (EV) and hybrid vehicles (HEV). Its high voltage resistance and low loss characteristics make it play an important role in battery management systems (BMS) and motor control units. This MOSFET helps improve the efficiency of battery management and electric drive systems, reduce energy losses, and improve overall performance and endurance.

4. **Solar inverter: **
T22N50-VB also plays an important role in solar photovoltaic power generation systems, especially in solar inverters. Due to its high voltage resistance of 650V, it can effectively handle high voltage currents from photovoltaic panels and convert DC to AC. Its low on-resistance reduces power losses in the inverter and improves the energy efficiency and stability of the overall system. It is suitable for improving the energy efficiency of residential and commercial photovoltaic power generation systems.

5. **Industrial Automation and Control: **
This MOSFET is also widely used in industrial automation and control systems, especially in equipment that requires high-power switching control, such as PLC (Programmable Logic Controller) and robot control systems. Its stable switching characteristics, low on-resistance and high current carrying capacity make it an ideal choice for these high-precision, high-power control systems.

In summary, T22N50-VB is a single N-channel MOSFET with high withstand voltage, low on-resistance and high current carrying capacity. It is widely used in power conversion, motor control, solar inverters, electric vehicles, industrial automation and other high-power and high-efficiency power electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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