T1450-VB TO252 Product details
Product introduction:
**T1450-VB TO252 MOSFET** is a high-performance N-channel metal oxide semiconductor field effect transistor (MOSFET) with low on-resistance (RDS(ON)), suitable for a variety of high-efficiency power management and switching applications. It uses **Trench** technology, which helps to reduce switching losses while providing high current drive capability. This MOSFET is packaged in **TO252**, can withstand a drain-source voltage (VDS) of up to **40V**, and supports a maximum continuous drain current (ID) of **55A**. Its gate-source voltage (VGS) supports a maximum of **±20V** and has a low threshold voltage (Vth) of **2.5V**, which is suitable for circuit design with high current, high switching frequency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: T1450-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 55A
- **Technology**: Trench technology
Domain and module applications:
1. **DC-DC converter**: T1450-VB is suitable for efficient DC-DC converter design, especially in applications requiring high current output and high efficiency. Due to its low RDS(ON) and high ID, it can effectively reduce power loss and improve overall efficiency during power conversion. It is widely used in vehicle power supply, communication base station power supply and other fields.
2. **Power tools and battery management system (BMS)**: Due to its high conduction capability, this MOSFET is suitable for providing efficient current switching functions in power tools and battery management systems. Its low RDS(ON) value means lower energy loss, which is crucial for improving battery life and reducing heat generation.
3. **Power switch module**: T1450-VB can be used as an efficient switch in power electronics applications and is suitable for systems such as motor drives, inverters and photovoltaic inverters. Due to its low on-resistance, it can improve the efficiency of power conversion and reduce heat loss of equipment.
4. **Load switch application**: This MOSFET is also very suitable for load switch applications, and can provide fast response and stable performance in load switching control. It is suitable for smart home appliances, power systems, and automation equipment.
5. **Automotive electronic system**: In the automotive field, T1450-VB can be used in battery management, drive control circuits, and electric vehicle chargers. Its low power consumption and high current capability can effectively improve the battery charging and discharging efficiency in the vehicle electrical system and optimize the vehicle energy management.
The high performance and low loss characteristics of this MOSFET make it widely applicable in a variety of applications with high current and high efficiency requirements.
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