T1305-VB Product details
Product introduction:
T1305-VB Product Introduction
**Model**: T1305-VB
**Package**: TO252
**Configuration**: Single-P-Channel
**Maximum drain-source voltage (VDS)**: -60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: -1.7V
**On-resistance (RDS(ON))**:
- 100mΩ (@VGS=4.5V)
- 90mΩ (@VGS=10V)
**Maximum drain current (ID)**: -30A
**Technology**: Trench technology
T1305-VB is a high-performance P-channel MOSFET with ultra-low on-resistance and large drain current handling capability. It adopts TO252 package and is suitable for applications that require high efficiency and low power loss, especially in power management and current control modules. This MOSFET adopts trench technology, which makes it have low on-resistance, fast switching speed and can operate at a lower gate voltage. The maximum drain-source voltage of T1305-VB is -60V and the maximum drain current is -30A, which is very suitable for power conversion, DC-DC converter, motor drive and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed product parameter description
- **VDS (maximum drain-source voltage)**: -60V
The maximum drain-source voltage of T1305-VB is -60V, which is suitable for medium voltage load driving and power management, and can withstand higher voltages and perform effective control.
- **VGS (maximum gate-source voltage)**: ±20V
Supports gate-source voltage of ±20V, adapts to various control signals and drive circuits, and is especially suitable for digital circuits and analog control systems.
- **Vth (threshold voltage)**: -1.7V
The threshold voltage of this MOSFET is -1.7V, which means that it can be turned on at a lower gate voltage, which is suitable for low-voltage control systems and energy-saving applications.
- **RDS(ON) (On-resistance)**:
- 100mΩ (@VGS=4.5V)
- 90mΩ (@VGS=10V)
This MOSFET has a very low on-resistance and maintains good conductivity even at a lower gate voltage (4.5V), which makes it very popular in high-efficiency power management.
- **ID (Maximum drain current)**: -30A
The maximum drain current of T1305-VB is -30A, which can withstand large current loads and is suitable for high-power applications. It can work stably under high load conditions.
- **Package type**: TO252
The TO252 package is suitable for medium-power applications and has good heat dissipation performance, allowing it to operate reliably under high load and high temperature environments.
- **Technology**: Trench
Trench technology provides lower on-resistance, faster switching speed, and improves efficiency in a smaller package, suitable for high-frequency and high-performance applications.
Domain and module applications:
Applicable fields and modules
Due to its low on-resistance and high current carrying capacity, the T1305-VB is suitable for the following fields and modules:
1. **DC-DC converter**
In DC-DC converters, the T1305-VB can efficiently convert voltages, especially in applications where high efficiency and low power loss are required. Its low RDS(ON) characteristics ensure that heat generation is minimized during the conversion process, improving the energy efficiency of the system.
2. **Motor drive module**
With its high drain current carrying capacity (up to 30A), the T1305-VB is well suited for motor drive modules, especially in power tools, electric vehicles and other high-power electric drive systems. The MOSFET can provide stable current control and reduce power losses in the system.
3. **Battery Management System (BMS)**
The T1305-VB can achieve efficient current switching and control in battery management systems, especially in applications that require efficient charge and discharge control. Its low on-resistance characteristic can reduce energy loss and improve the overall performance of the system.
4. **Power converters and inverters**
In power converters and inverters, T1305-VB is suitable for high-efficiency control of DC-AC inversion and AC-DC rectification. Its low RDS(ON) ensures low switching losses and can withstand high current loads, making it suitable for use in solar power generation systems, UPS power supplies and other power electronic equipment.
5. **LED driver power supply**
In LED driver power supply modules, T1305-VB can provide efficient current regulation to ensure stable operation of LED lamps. Due to its low on-resistance and fast response time, it can reduce heat generation and improve system efficiency.
6. **Automotive electronic systems**
T1305-VB can be widely used in automotive electronic systems, especially in automotive power management, charging control and electric drive systems. It can stably carry large currents and reduce power losses, improving the efficiency of automotive power systems.
7. **High-efficiency power modules and intelligent power management**
Among high-efficiency power modules, T1305-VB can help achieve efficient power conversion, reduce energy waste, and improve the overall performance of the equipment due to its low on-resistance and high current carrying capacity, and is suitable for intelligent power management applications.
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