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T12N10-VB TO251 Product details
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T12N10-VB MOSFET Product Introduction
T12N10-VB is an N-channel power MOSFET with excellent performance, using TO251 package, designed for a variety of high-efficiency power conversion and switching applications. This MOSFET has a maximum drain-source voltage (V_DS) of 100V, a maximum drain current (I_D) of 15A, and a threshold voltage (V_th) of 1.8V, making it very suitable for applications such as power management, power conversion, and motor drive. It is based on Trench technology and provides low on-resistance (R_DS(ON) = 110mΩ @ V_GS = 10V), and performs well in high-frequency switching operations, reducing energy loss and improving the overall efficiency of the system.
This MOSFET is suitable for use in low to medium voltage power applications, providing an efficient and reliable switching solution that can effectively improve system efficiency and reduce power loss. T12N10-VB can be widely used in power adapters, motor drives, battery management systems, DC-DC converters and other fields to help improve the energy efficiency and reliability of electronic equipment.
T12N10-VB is an N-channel power MOSFET with excellent performance, using TO251 package, designed for a variety of high-efficiency power conversion and switching applications. This MOSFET has a maximum drain-source voltage (V_DS) of 100V, a maximum drain current (I_D) of 15A, and a threshold voltage (V_th) of 1.8V, making it very suitable for applications such as power management, power conversion, and motor drive. It is based on Trench technology and provides low on-resistance (R_DS(ON) = 110mΩ @ V_GS = 10V), and performs well in high-frequency switching operations, reducing energy loss and improving the overall efficiency of the system.
This MOSFET is suitable for use in low to medium voltage power applications, providing an efficient and reliable switching solution that can effectively improve system efficiency and reduce power loss. T12N10-VB can be widely used in power adapters, motor drives, battery management systems, DC-DC converters and other fields to help improve the energy efficiency and reliability of electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
T12N10-VB MOSFET Detailed Parameters
- **Package Type**: TO251
- **Configuration**: Unipolar N-channel
- **Maximum Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: 1.8V
- **On-Resistance (R_DS(ON))**:
- 110mΩ @ V_GS = 10V
- **Maximum Drain Current (I_D)**: 15A
- **Technology**: Trench Technology
- **Power Loss**: Suitable for medium and high power conversion applications
- **Switching Frequency**: Suitable for high-efficiency power systems
- **Operating Temperature Range**: -55°C to +150°C
- **Maximum Junction Temperature**: 150°C
- **Maximum power dissipation**: Suitable for medium load power applications under proper heat dissipation conditions
- **Package Type**: TO251
- **Configuration**: Unipolar N-channel
- **Maximum Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: 1.8V
- **On-Resistance (R_DS(ON))**:
- 110mΩ @ V_GS = 10V
- **Maximum Drain Current (I_D)**: 15A
- **Technology**: Trench Technology
- **Power Loss**: Suitable for medium and high power conversion applications
- **Switching Frequency**: Suitable for high-efficiency power systems
- **Operating Temperature Range**: -55°C to +150°C
- **Maximum Junction Temperature**: 150°C
- **Maximum power dissipation**: Suitable for medium load power applications under proper heat dissipation conditions
Domain and module applications：
T12N10-VB MOSFET Application Fields and Modules
1. **Power Management and Power Conversion**
- With its low on-resistance and high current carrying capacity, the T12N10-VB MOSFET is suitable for power adapters, AC-DC power modules and DC-DC converters. In power management systems, this MOSFET provides efficient power conversion, reduces power loss and improves the energy efficiency of the overall system. Its 100V withstand voltage capability enables it to provide stable support in various power devices.
2. **Motor Drive System**
- Due to its 15A maximum leakage current and low R_DS(ON) value, the T12N10-VB is very suitable in motor drive applications, especially for DC motor (DC Motors) drive, stepper motor drive and brushless DC motor (BLDC Motors) power conversion. This MOSFET can ensure efficient power transmission while reducing energy loss and temperature rise, and is widely used in automation systems, power tools, robots and electric vehicles.
3. **LED Driver**
- In LED driver systems, the T12N10-VB MOSFET can provide stable current control to ensure long-term operation of LED lighting systems. Due to its low on-resistance, it can significantly reduce switching losses and improve power conversion efficiency, making it suitable for home, commercial and industrial lighting.
4. **Battery Management System**
- This MOSFET is also suitable for use in battery management systems (BMS), especially in battery charging and battery monitoring modules. The high current capability and excellent switching performance of the T12N10-VB enable it to effectively manage the battery charging and discharging process, provide precise current control, and avoid overheating and power loss. It is widely used in battery management systems for energy storage systems, portable devices and electric vehicles.
5. **Industrial Control and Automation**
- In industrial control and automation systems, the T12N10-VB is used as a switching element in power supply, drive control systems and various electrical devices. Its high current handling capability and low switching loss make it suitable for industrial environments that require high reliability and high efficiency.
6. **Communication Equipment Power Management**
- In communication equipment, T12N10-VB is used in power converters, power amplifier power supplies, and power modules for wireless base stations. The high-frequency switching characteristics and low-loss characteristics of MOSFET enable it to provide efficient and stable power support in the power system of wireless equipment, meeting the needs of modern communication equipment for high efficiency and low heat.
1. **Power Management and Power Conversion**
- With its low on-resistance and high current carrying capacity, the T12N10-VB MOSFET is suitable for power adapters, AC-DC power modules and DC-DC converters. In power management systems, this MOSFET provides efficient power conversion, reduces power loss and improves the energy efficiency of the overall system. Its 100V withstand voltage capability enables it to provide stable support in various power devices.
2. **Motor Drive System**
- Due to its 15A maximum leakage current and low R_DS(ON) value, the T12N10-VB is very suitable in motor drive applications, especially for DC motor (DC Motors) drive, stepper motor drive and brushless DC motor (BLDC Motors) power conversion. This MOSFET can ensure efficient power transmission while reducing energy loss and temperature rise, and is widely used in automation systems, power tools, robots and electric vehicles.
3. **LED Driver**
- In LED driver systems, the T12N10-VB MOSFET can provide stable current control to ensure long-term operation of LED lighting systems. Due to its low on-resistance, it can significantly reduce switching losses and improve power conversion efficiency, making it suitable for home, commercial and industrial lighting.
4. **Battery Management System**
- This MOSFET is also suitable for use in battery management systems (BMS), especially in battery charging and battery monitoring modules. The high current capability and excellent switching performance of the T12N10-VB enable it to effectively manage the battery charging and discharging process, provide precise current control, and avoid overheating and power loss. It is widely used in battery management systems for energy storage systems, portable devices and electric vehicles.
5. **Industrial Control and Automation**
- In industrial control and automation systems, the T12N10-VB is used as a switching element in power supply, drive control systems and various electrical devices. Its high current handling capability and low switching loss make it suitable for industrial environments that require high reliability and high efficiency.
6. **Communication Equipment Power Management**
- In communication equipment, T12N10-VB is used in power converters, power amplifier power supplies, and power modules for wireless base stations. The high-frequency switching characteristics and low-loss characteristics of MOSFET enable it to provide efficient and stable power support in the power system of wireless equipment, meeting the needs of modern communication equipment for high efficiency and low heat.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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