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T12N10G-VB Product details
Back to previous pageProduct introduction：
**T12N10G-VB - Product Introduction**
T12N10G-VB is a high-performance N-channel MOSFET in a TO252 package, designed for power control and switching applications with medium voltage and current handling. The maximum drain-source voltage (VDS) of this MOSFET is 100V and the gate threshold voltage (Vth) is 1.8V, which enables it to be enabled at low gate voltage and provide high efficiency under a wide range of operating conditions. Its on-resistance (RDS(ON)) is 114mΩ (@VGS=10V), with low conduction losses, suitable for efficient power management and switching applications.
The device is capable of providing a maximum drain current of 15A, which is ideal for applications that require medium voltage (100V) and medium current (15A) handling capabilities. Using Trench technology, the T12N10G-VB can effectively reduce switching losses and improve operating efficiency, making it an ideal choice for applications such as power electronic systems, low-power power supplies, LED drivers, and battery management systems.
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T12N10G-VB is a high-performance N-channel MOSFET in a TO252 package, designed for power control and switching applications with medium voltage and current handling. The maximum drain-source voltage (VDS) of this MOSFET is 100V and the gate threshold voltage (Vth) is 1.8V, which enables it to be enabled at low gate voltage and provide high efficiency under a wide range of operating conditions. Its on-resistance (RDS(ON)) is 114mΩ (@VGS=10V), with low conduction losses, suitable for efficient power management and switching applications.
The device is capable of providing a maximum drain current of 15A, which is ideal for applications that require medium voltage (100V) and medium current (15A) handling capabilities. Using Trench technology, the T12N10G-VB can effectively reduce switching losses and improve operating efficiency, making it an ideal choice for applications such as power electronic systems, low-power power supplies, LED drivers, and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**T12N10G-VB - Detailed Parameter Description**
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel MOSFET |
| **VDS (Drain-Source Voltage)** | 100V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Gate Threshold Voltage)** | 1.8V |
| **RDS(ON)** | 114mΩ @ VGS=10V |
| **ID (Drain Current)** | 15A |
| **Technology** | Trench Technology|
| **Maximum Junction Temperature** | 150°C |
| **Operating Temperature Range** | -55°C to +150°C |
| **Power Dissipation** | Low power loss, high performance applications|
| **Application** | Power conversion, LED driving, battery management, etc.|
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| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel MOSFET |
| **VDS (Drain-Source Voltage)** | 100V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Gate Threshold Voltage)** | 1.8V |
| **RDS(ON)** | 114mΩ @ VGS=10V |
| **ID (Drain Current)** | 15A |
| **Technology** | Trench Technology|
| **Maximum Junction Temperature** | 150°C |
| **Operating Temperature Range** | -55°C to +150°C |
| **Power Dissipation** | Low power loss, high performance applications|
| **Application** | Power conversion, LED driving, battery management, etc.|
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Domain and module applications：
**T12N10G-VB - Applications and Module Examples**
1. **Power Converter (AC-DC / DC-DC Converter)**
The low on-resistance and high current handling capability of the T12N10G-VB make it widely used in power converters. It is suitable for AC-DC and DC-DC power conversion circuits, especially when high efficiency, low power consumption and medium voltage power supply (100V) are required. Its efficient switching characteristics make it very suitable for power adapters, computer power supplies, LED power supplies, etc.
2. **LED Driver**
In the LED driver circuit, the T12N10G-VB MOSFET can be used as a switching element to efficiently drive the LED lighting system. Its low on-resistance and excellent switching performance ensure that the LED driver maintains low heat generation while operating stably, providing longer service life and higher energy efficiency.
3. **Battery Management System (BMS)**
T12N10G-VB is also commonly used in battery management systems (BMS), especially in medium-power applications. Its low on-resistance reduces energy loss during battery charging and discharging, making it a key component in high-efficiency battery management systems. The MOSFET can operate stably under high current loads, making it an ideal choice for equipment such as power tools, portable power supplies and electric vehicles.
4. **Power Factor Correction (PFC) Circuit**
Power Factor Correction (PFC) circuits are often used to improve the efficiency and power quality of power systems. T12N10G-VB can be used in this type of circuit, especially in PFC applications that require higher voltage and current. It can help reduce harmonic distortion in power systems and improve power efficiency, especially in power adapters and industrial power systems.
5. **Power Tools and Consumer Electronics**
In power tools and consumer electronics, T12N10G-VB is suitable for medium-power power management. Due to its high current carrying capacity and low conduction losses, it can reduce heat generation while ensuring high efficiency. This MOSFET is suitable for power switches and battery management modules in various power tools, power equipment and portable electronic devices.
6. **Automotive Power System**
The performance of T12N10G-VB makes it widely used in automotive power systems, especially in vehicle charging systems, vehicle power converters and battery management systems. It can provide stable and reliable performance in high current environments, helping to improve battery charging efficiency and extend battery life.
1. **Power Converter (AC-DC / DC-DC Converter)**
The low on-resistance and high current handling capability of the T12N10G-VB make it widely used in power converters. It is suitable for AC-DC and DC-DC power conversion circuits, especially when high efficiency, low power consumption and medium voltage power supply (100V) are required. Its efficient switching characteristics make it very suitable for power adapters, computer power supplies, LED power supplies, etc.
2. **LED Driver**
In the LED driver circuit, the T12N10G-VB MOSFET can be used as a switching element to efficiently drive the LED lighting system. Its low on-resistance and excellent switching performance ensure that the LED driver maintains low heat generation while operating stably, providing longer service life and higher energy efficiency.
3. **Battery Management System (BMS)**
T12N10G-VB is also commonly used in battery management systems (BMS), especially in medium-power applications. Its low on-resistance reduces energy loss during battery charging and discharging, making it a key component in high-efficiency battery management systems. The MOSFET can operate stably under high current loads, making it an ideal choice for equipment such as power tools, portable power supplies and electric vehicles.
4. **Power Factor Correction (PFC) Circuit**
Power Factor Correction (PFC) circuits are often used to improve the efficiency and power quality of power systems. T12N10G-VB can be used in this type of circuit, especially in PFC applications that require higher voltage and current. It can help reduce harmonic distortion in power systems and improve power efficiency, especially in power adapters and industrial power systems.
5. **Power Tools and Consumer Electronics**
In power tools and consumer electronics, T12N10G-VB is suitable for medium-power power management. Due to its high current carrying capacity and low conduction losses, it can reduce heat generation while ensuring high efficiency. This MOSFET is suitable for power switches and battery management modules in various power tools, power equipment and portable electronic devices.
6. **Automotive Power System**
The performance of T12N10G-VB makes it widely used in automotive power systems, especially in vehicle charging systems, vehicle power converters and battery management systems. It can provide stable and reliable performance in high current environments, helping to improve battery charging efficiency and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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