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T11N70-VB TO220F Product details
Back to previous pageProduct introduction：
1. Product Introduction
**T11N70-VB** is a **single N-channel MOSFET** in **TO220F package**, using **SJ_Multi-EPI technology**. Its design has excellent switching performance and is suitable for medium-power **switching power supplies, inverters** and other power electronic systems. The **maximum drain-source voltage (VDS) of this MOSFET is 700V**, which is suitable for use in **medium-high voltage** environments. It has a **low on-resistance (RDS(ON))**, which is 750mΩ** at **VGS=10V**, which can effectively reduce switching losses and is suitable for **switching circuits** and **current drive** systems that require high efficiency and stability.
This device is suitable for use in **power electronics, industrial control, photovoltaic inverters, automotive power systems** and other fields, providing efficient current switching and energy conversion, especially in **high voltage and high current environments**, with significant performance advantages.
**T11N70-VB** is a **single N-channel MOSFET** in **TO220F package**, using **SJ_Multi-EPI technology**. Its design has excellent switching performance and is suitable for medium-power **switching power supplies, inverters** and other power electronic systems. The **maximum drain-source voltage (VDS) of this MOSFET is 700V**, which is suitable for use in **medium-high voltage** environments. It has a **low on-resistance (RDS(ON))**, which is 750mΩ** at **VGS=10V**, which can effectively reduce switching losses and is suitable for **switching circuits** and **current drive** systems that require high efficiency and stability.
This device is suitable for use in **power electronics, industrial control, photovoltaic inverters, automotive power systems** and other fields, providing efficient current switching and energy conversion, especially in **high voltage and high current environments**, with significant performance advantages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Maximum drain current (ID)**: 7A
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Input capacitance (Ciss)**: 1000pF (typical value)
- **Output capacitance (Coss)**: 130pF (typical value)
- **Reverse recovery time (trr)**: 50ns (typical value)
- **Gate charge (Qg)**: 45nC (typical)
- **Technology**: SJ_Multi-EPI
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Power dissipation (Pd)**: 75W (depending on heat dissipation conditions)
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Maximum drain current (ID)**: 7A
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Input capacitance (Ciss)**: 1000pF (typical value)
- **Output capacitance (Coss)**: 130pF (typical value)
- **Reverse recovery time (trr)**: 50ns (typical value)
- **Gate charge (Qg)**: 45nC (typical)
- **Technology**: SJ_Multi-EPI
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Power dissipation (Pd)**: 75W (depending on heat dissipation conditions)
Domain and module applications：
3. Application Fields and Module Examples
**1. Switching Power Supplies **
- **Example**: T11N70-VB can be widely used in **switching power supply (SMPS)** systems, especially in **medium and high voltage power supplies** and **power conversion modules**, to give full play to its low on-resistance and efficient switching characteristics, optimize system performance and reduce power loss. Its **700V maximum drain-source voltage** and **7A drain current carrying capacity** make it perform well in **AC-DC power supplies, DC-DC converters** and other applications, and is suitable for **power management** and **power conversion** at medium power levels.
**2. Solar Inverters **
- **Example**: In **photovoltaic inverter** systems, T11N70-VB can be used for **DC to AC** conversion of **solar panels**. The low **RDS(ON)** and **700V voltage rating** of this MOSFET make it very suitable for **photovoltaic power generation** power conversion systems, especially in **medium power photovoltaic power generation applications**, it can provide efficient and reliable switching performance to ensure the operating efficiency and stability of the inverter.
**3. Electric Vehicles**
- **Example**: In the **drive circuit and battery management system (BMS)** of **electric vehicles**, T11N70-VB can be used as a switching element to control the charging and discharging process of the battery. Its **700V voltage range** and **7A high current carrying capacity** enable it to handle current switching in high voltage systems, and is suitable for battery charging modules, power systems, and power control systems.
**4. Motor Drives**
- **Example**: In **motor drive systems**, such as **industrial automation motors, fan drives, power tool drive systems**, etc., T11N70-VB can be used as an efficient switching element to provide stable current control. Its **high withstand voltage capability and low on-resistance** characteristics ensure high efficiency and stable operation of motor drive systems, especially in medium-power applications, which can reduce switching losses and improve overall system efficiency.
**5. Power Electronics Control**
- **Example**: SWP11N70-VB can be applied to **power electronic control modules**, such as **frequency converters, inverters, DC-AC converters** and other devices, and is suitable for medium-voltage power control systems. It has excellent switching performance and is particularly suitable for applications that require fast switching and low losses, such as **power transmission, power conversion, etc.**
**6. Communication and High-Frequency Applications**
- **Example**: In **communication equipment** and **high-frequency power amplifiers**, the T11N70-VB can be used as a power switch for power conversion and regulation. Its **low on-resistance** and **high current capability** make it very suitable for power management and signal processing in high-frequency **communication systems**.
**1. Switching Power Supplies **
- **Example**: T11N70-VB can be widely used in **switching power supply (SMPS)** systems, especially in **medium and high voltage power supplies** and **power conversion modules**, to give full play to its low on-resistance and efficient switching characteristics, optimize system performance and reduce power loss. Its **700V maximum drain-source voltage** and **7A drain current carrying capacity** make it perform well in **AC-DC power supplies, DC-DC converters** and other applications, and is suitable for **power management** and **power conversion** at medium power levels.
**2. Solar Inverters **
- **Example**: In **photovoltaic inverter** systems, T11N70-VB can be used for **DC to AC** conversion of **solar panels**. The low **RDS(ON)** and **700V voltage rating** of this MOSFET make it very suitable for **photovoltaic power generation** power conversion systems, especially in **medium power photovoltaic power generation applications**, it can provide efficient and reliable switching performance to ensure the operating efficiency and stability of the inverter.
**3. Electric Vehicles**
- **Example**: In the **drive circuit and battery management system (BMS)** of **electric vehicles**, T11N70-VB can be used as a switching element to control the charging and discharging process of the battery. Its **700V voltage range** and **7A high current carrying capacity** enable it to handle current switching in high voltage systems, and is suitable for battery charging modules, power systems, and power control systems.
**4. Motor Drives**
- **Example**: In **motor drive systems**, such as **industrial automation motors, fan drives, power tool drive systems**, etc., T11N70-VB can be used as an efficient switching element to provide stable current control. Its **high withstand voltage capability and low on-resistance** characteristics ensure high efficiency and stable operation of motor drive systems, especially in medium-power applications, which can reduce switching losses and improve overall system efficiency.
**5. Power Electronics Control**
- **Example**: SWP11N70-VB can be applied to **power electronic control modules**, such as **frequency converters, inverters, DC-AC converters** and other devices, and is suitable for medium-voltage power control systems. It has excellent switching performance and is particularly suitable for applications that require fast switching and low losses, such as **power transmission, power conversion, etc.**
**6. Communication and High-Frequency Applications**
- **Example**: In **communication equipment** and **high-frequency power amplifiers**, the T11N70-VB can be used as a power switch for power conversion and regulation. Its **low on-resistance** and **high current capability** make it very suitable for power management and signal processing in high-frequency **communication systems**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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