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T110N2G-VB Product details
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T110N2G-VB Product Introduction
**Model**: T110N2G-VB
**Package**: TO252
**Configuration**: Single-N-Channel
**Maximum drain-source voltage (VDS)**: 20V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 0.5~1.5V
**On-resistance (RDS(ON))**: 6mΩ (@VGS=2.5V)
**On-resistance (RDS(ON))**: 4.5mΩ (@VGS=4.5V)
**Maximum drain current (ID)**: 100A
**Technology**: Trench (trench technology)
The T110N2G-VB is an ultra-low on-resistance, high current carrying capacity N-channel MOSFET in a TO252 package. It has very low on-resistance and a wide range of threshold voltage (Vth), making it suitable for a variety of high-performance and high-load applications. Its maximum drain-source voltage is 20V and it can withstand a drain current of up to 100A, making it particularly suitable for power management and power-intensive systems. The trench technology of the T110N2G-VB can further reduce power loss and improve operating efficiency.
**Model**: T110N2G-VB
**Package**: TO252
**Configuration**: Single-N-Channel
**Maximum drain-source voltage (VDS)**: 20V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 0.5~1.5V
**On-resistance (RDS(ON))**: 6mΩ (@VGS=2.5V)
**On-resistance (RDS(ON))**: 4.5mΩ (@VGS=4.5V)
**Maximum drain current (ID)**: 100A
**Technology**: Trench (trench technology)
The T110N2G-VB is an ultra-low on-resistance, high current carrying capacity N-channel MOSFET in a TO252 package. It has very low on-resistance and a wide range of threshold voltage (Vth), making it suitable for a variety of high-performance and high-load applications. Its maximum drain-source voltage is 20V and it can withstand a drain current of up to 100A, making it particularly suitable for power management and power-intensive systems. The trench technology of the T110N2G-VB can further reduce power loss and improve operating efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed product parameter description
- **VDS (maximum drain-source voltage)**: 20V
The maximum drain-source voltage of SWP110N2G-VB is 20V, which is suitable for low-voltage power management and power control applications, especially mobile devices, portable power modules, etc.
- **VGS (gate-source voltage)**: ±20V
Supporting gate-source voltage of ±20V, it is compatible with most drive circuits and control signals, and is suitable for a variety of low-voltage applications.
- **Vth (threshold voltage)**: 0.5V ~ 1.5V
T110N2G-VB has a wide range of threshold voltages, which makes it adaptable to different working environments and ensures stable operation even at low voltages.
- **RDS(ON) (On-resistance)**:
- 6mΩ (@VGS=2.5V)
- 4.5mΩ (@VGS=4.5V)
The MOSFET can maintain a very low on-resistance (6mΩ) at a lower gate voltage (at 2.5V), and its on-resistance drops to 4.5mΩ at a gate voltage of 4.5V, which is suitable for high-efficiency current control applications.
- **ID (Maximum drain current)**: 100A
The high drain current of up to 100A makes the T110N2G-VB suitable for high-current load driving, such as power conversion, inverters, and motor drives.
- **Package type**: TO252
The TO252 package is suitable for medium-power applications and has good heat dissipation performance, and can operate stably under high loads.
- **Technology**: Trench technology
The use of trench technology helps to further reduce on-resistance and increase switching speed, making it suitable for high-frequency, low-power loss applications.
- **VDS (maximum drain-source voltage)**: 20V
The maximum drain-source voltage of SWP110N2G-VB is 20V, which is suitable for low-voltage power management and power control applications, especially mobile devices, portable power modules, etc.
- **VGS (gate-source voltage)**: ±20V
Supporting gate-source voltage of ±20V, it is compatible with most drive circuits and control signals, and is suitable for a variety of low-voltage applications.
- **Vth (threshold voltage)**: 0.5V ~ 1.5V
T110N2G-VB has a wide range of threshold voltages, which makes it adaptable to different working environments and ensures stable operation even at low voltages.
- **RDS(ON) (On-resistance)**:
- 6mΩ (@VGS=2.5V)
- 4.5mΩ (@VGS=4.5V)
The MOSFET can maintain a very low on-resistance (6mΩ) at a lower gate voltage (at 2.5V), and its on-resistance drops to 4.5mΩ at a gate voltage of 4.5V, which is suitable for high-efficiency current control applications.
- **ID (Maximum drain current)**: 100A
The high drain current of up to 100A makes the T110N2G-VB suitable for high-current load driving, such as power conversion, inverters, and motor drives.
- **Package type**: TO252
The TO252 package is suitable for medium-power applications and has good heat dissipation performance, and can operate stably under high loads.
- **Technology**: Trench technology
The use of trench technology helps to further reduce on-resistance and increase switching speed, making it suitable for high-frequency, low-power loss applications.
Domain and module applications：
Applicable fields and modules
Due to its low on-resistance and ultra-high current carrying capacity, T110N2G-VB is particularly suitable for the following fields and modules:
1. **DC-DC converter and power management module**
Due to its low on-resistance and high current carrying capacity, T110N2G-VB is suitable for high-efficiency DC-DC converters, battery management systems (BMS) and various power management modules. In particular, in systems that require high efficiency and low power loss, this MOSFET can significantly improve conversion efficiency and reduce energy loss.
2. **Power tools and motor drive systems**
In power tools and motor control systems, T110N2G-VB can provide up to 100A of drain current, which is suitable for driving high-power loads. Its low RDS(ON) characteristics help reduce heat generation during motor operation and improve the overall efficiency of power tools and drive systems.
3. **Battery Management System (BMS)**
In the battery management system, T110N2G-VB can efficiently control the battery charging and discharging process, especially for battery applications with high current requirements. Its low on-resistance helps improve charging efficiency and battery cycle life.
4. **Power Module and LED Driver**
Suitable for high-efficiency power modules and LED driver power supplies, especially in applications where power needs to be precisely controlled and efficiently converted. T110N2G-VB can reduce power loss during the conversion process, improve system efficiency, and extend the service life of the equipment.
5. **Inverter**
T110N2G-VB's low on-resistance and high current capability make it ideal for inverter applications, especially in DC-AC inverters and solar power generation systems. It can withstand high current loads and maintain low heat generation, thereby improving the operating efficiency and long-term stability of the inverter.
6. **Mobile devices and portable power**
In mobile devices and portable power systems, the T110N2G-VB can provide efficient power conversion and current control, suitable for use in these devices with high requirements for battery life and power consumption.
7. **Automotive electronics**
In automotive electronic systems, the high current handling capability of the T110N2G-VB makes it suitable for multiple modules such as battery management, electric vehicle power systems, and on-board chargers. Its low RDS(ON) and high efficiency performance can reduce heat and power loss, suitable for high-efficiency on-board power systems.
Due to its low on-resistance and ultra-high current carrying capacity, T110N2G-VB is particularly suitable for the following fields and modules:
1. **DC-DC converter and power management module**
Due to its low on-resistance and high current carrying capacity, T110N2G-VB is suitable for high-efficiency DC-DC converters, battery management systems (BMS) and various power management modules. In particular, in systems that require high efficiency and low power loss, this MOSFET can significantly improve conversion efficiency and reduce energy loss.
2. **Power tools and motor drive systems**
In power tools and motor control systems, T110N2G-VB can provide up to 100A of drain current, which is suitable for driving high-power loads. Its low RDS(ON) characteristics help reduce heat generation during motor operation and improve the overall efficiency of power tools and drive systems.
3. **Battery Management System (BMS)**
In the battery management system, T110N2G-VB can efficiently control the battery charging and discharging process, especially for battery applications with high current requirements. Its low on-resistance helps improve charging efficiency and battery cycle life.
4. **Power Module and LED Driver**
Suitable for high-efficiency power modules and LED driver power supplies, especially in applications where power needs to be precisely controlled and efficiently converted. T110N2G-VB can reduce power loss during the conversion process, improve system efficiency, and extend the service life of the equipment.
5. **Inverter**
T110N2G-VB's low on-resistance and high current capability make it ideal for inverter applications, especially in DC-AC inverters and solar power generation systems. It can withstand high current loads and maintain low heat generation, thereby improving the operating efficiency and long-term stability of the inverter.
6. **Mobile devices and portable power**
In mobile devices and portable power systems, the T110N2G-VB can provide efficient power conversion and current control, suitable for use in these devices with high requirements for battery life and power consumption.
7. **Automotive electronics**
In automotive electronic systems, the high current handling capability of the T110N2G-VB makes it suitable for multiple modules such as battery management, electric vehicle power systems, and on-board chargers. Its low RDS(ON) and high efficiency performance can reduce heat and power loss, suitable for high-efficiency on-board power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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