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T1100L-VB Product details

Product introduction:

1. **T1100L-VB Product Introduction**

T1100L-VB is a **100V N-Channel MOSFET**, **TO220 package**, **manufactured with **advanced Trench technology**. This MOSFET has a very low **on-resistance (RDS(ON))** of **9mΩ** at **VGS = 10V**, and can carry a maximum drain current (ID)** of up to **100A, which makes it excel in high-power applications. The **100V drain-source voltage** and **low on-resistance** characteristics of the T1100L-VB make it widely used in efficient current control and power conversion systems, especially in areas requiring high efficiency and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **T1100L-VB Detailed Parameters**

- **Package Type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- **20mΩ @ VGS = 4.5V**
- **9mΩ @ VGS = 10V**
- **Maximum Drain Current (ID)**: 100A
- **Maximum Power Dissipation**: Maximum Approx. **250W** (Depending on working conditions and heat dissipation design)
- **Operating Temperature Range**: -55°C to +150°C
- **Switching Speed**: Suitable for high frequency switching applications with fast switching response
- **Technology Type**: Trench
- **Maximum Junction Temperature**: 150°C
- **Reverse Recovery Characteristics**: Low reverse recovery time, suitable for fast switching operation

Domain and module applications:

3. **Application fields and module examples of T1100L-VB**

# **High-efficiency switching power supply (SMPS)**
Due to its **low RDS(ON)** and **high current carrying capacity**, T1100L-VB is very suitable for **high-efficiency switching power supply** (SMPS) applications. It can significantly reduce energy loss and improve conversion efficiency, especially in high-current applications.

**Application examples**: In **industrial power systems, computer power supplies, and LED driver power supplies**, T1100L-VB can be used as a switching element to handle high-power and high-frequency power conversion and improve the efficiency of the overall system.

# **Power amplifier**
T1100L-VB can also be used in **power amplifiers** (such as audio amplifiers and RF power amplifiers), especially in applications that require high power and high efficiency. Due to its low on-resistance and high current handling capability, it can meet the current requirements of these demanding applications.

**Application example**: In **wireless communication equipment, broadcast transmitters and high-frequency applications**, T1100L-VB can be used as a switching element in a power amplifier to provide efficient and stable signal amplification.

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Summary

T1100L-VB is a **100V N-Channel MOSFET** with **low on-resistance (9mΩ @ VGS = 10V)** and **100A maximum current carrying capacity**, which is very suitable for **high-efficiency switching power supplies, DC motor drives, battery management systems, power amplifiers** and **automotive electronic systems** and other fields. Its **low energy consumption and high efficiency** characteristics make it perform well in applications that require high current and high efficiency, and it is an ideal choice for improving energy efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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