Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. **T1100L-VB Detailed Parameters**
- **Package Type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- **20mΩ @ VGS = 4.5V**
- **9mΩ @ VGS = 10V**
- **Maximum Drain Current (ID)**: 100A
- **Maximum Power Dissipation**: Maximum Approx. **250W** (Depending on working conditions and heat dissipation design)
- **Operating Temperature Range**: -55°C to +150°C
- **Switching Speed**: Suitable for high frequency switching applications with fast switching response
- **Technology Type**: Trench
- **Maximum Junction Temperature**: 150°C
- **Reverse Recovery Characteristics**: Low reverse recovery time, suitable for fast switching operation
Domain and module applications:
3. **Application fields and module examples of T1100L-VB**
# **High-efficiency switching power supply (SMPS)**
Due to its **low RDS(ON)** and **high current carrying capacity**, T1100L-VB is very suitable for **high-efficiency switching power supply** (SMPS) applications. It can significantly reduce energy loss and improve conversion efficiency, especially in high-current applications.
**Application examples**: In **industrial power systems, computer power supplies, and LED driver power supplies**, T1100L-VB can be used as a switching element to handle high-power and high-frequency power conversion and improve the efficiency of the overall system.
# **Power amplifier**
T1100L-VB can also be used in **power amplifiers** (such as audio amplifiers and RF power amplifiers), especially in applications that require high power and high efficiency. Due to its low on-resistance and high current handling capability, it can meet the current requirements of these demanding applications.
**Application example**: In **wireless communication equipment, broadcast transmitters and high-frequency applications**, T1100L-VB can be used as a switching element in a power amplifier to provide efficient and stable signal amplification.
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Summary
T1100L-VB is a **100V N-Channel MOSFET** with **low on-resistance (9mΩ @ VGS = 10V)** and **100A maximum current carrying capacity**, which is very suitable for **high-efficiency switching power supplies, DC motor drives, battery management systems, power amplifiers** and **automotive electronic systems** and other fields. Its **low energy consumption and high efficiency** characteristics make it perform well in applications that require high current and high efficiency, and it is an ideal choice for improving energy efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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