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T100N2-VB Product details
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**T100N2-VB MOSFET Product Introduction**
T100N2-VB is a single N-channel power MOSFET in TO252 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 20V and the maximum drain current (ID) reaches 100A, which is suitable for low voltage power management and power conversion applications that require high current handling. T100N2-VB uses Trench technology and has extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 2.5V and 4.5mΩ @ VGS = 4.5V), which can effectively reduce power loss and improve overall system efficiency. The Vth (threshold voltage) range is 0.5V to 1.5V, which is suitable for applications in low voltage drive and high efficiency switching environments. The device is particularly suitable for systems with high current requirements and low operating voltages, such as power management, LED drivers, and power tools.
T100N2-VB is a single N-channel power MOSFET in TO252 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 20V and the maximum drain current (ID) reaches 100A, which is suitable for low voltage power management and power conversion applications that require high current handling. T100N2-VB uses Trench technology and has extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 2.5V and 4.5mΩ @ VGS = 4.5V), which can effectively reduce power loss and improve overall system efficiency. The Vth (threshold voltage) range is 0.5V to 1.5V, which is suitable for applications in low voltage drive and high efficiency switching environments. The device is particularly suitable for systems with high current requirements and low operating voltages, such as power management, LED drivers, and power tools.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**T100N2-VB MOSFET Detailed Parameters**
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Maximum power loss (Pd)**: 30W
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate drive current**: ±3A
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Maximum power loss (Pd)**: 30W
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate drive current**: ±3A
Domain and module applications：
**T100N2-VB MOSFET Application Examples**
T100N2-VB MOSFET can provide efficient and reliable power conversion in many application fields due to its excellent high current carrying capability and low on-resistance. Here are some typical applications:
1. **Power Management System**
- T100N2-VB can be widely used in power management systems, especially in low-voltage power modules that require high current handling capabilities, such as high-efficiency DC-DC converters, UPS (Uninterruptible Power Supply), etc. Its low RDS(ON) can effectively reduce losses and improve the conversion efficiency and stability of the power system.
2. **Power Tools**
- In power tools, T100N2-VB can be used as the main switching element to control the flow of battery current. Due to its high current capability and low loss characteristics, it is suitable for battery-powered systems of high-power power tools to ensure efficient and safe operation.
3. **Battery Management System (BMS)**
- The high current carrying capacity of T100N2-VB makes it very suitable for battery management systems, especially those battery charge and discharge management modules that need to handle high currents. It can effectively regulate the current flow of the battery, ensuring efficient and safe battery charging and discharging.
4. **LED Driver**
- In LED driver, T100N2-VB can be used to provide stable current output, especially in low voltage and high current scenarios. Low on-resistance enables it to maintain low power loss when handling high current, improving the brightness and service life of the LED.
5. **Automotive Electronics**
- T100N2-VB can also be used in the automotive electronics field, especially for battery management and power conversion systems for electric vehicles (EV) and hybrid electric vehicles (HEV). Its efficient switching performance and low loss characteristics enable it to optimize power transmission in automotive power systems, improving overall energy efficiency and system stability.
Through these application examples, the T100N2-VB MOSFET is able to provide stable and efficient performance in a variety of applications requiring high current and low voltage, and is suitable for use in various power control and power conversion modules.
T100N2-VB MOSFET can provide efficient and reliable power conversion in many application fields due to its excellent high current carrying capability and low on-resistance. Here are some typical applications:
1. **Power Management System**
- T100N2-VB can be widely used in power management systems, especially in low-voltage power modules that require high current handling capabilities, such as high-efficiency DC-DC converters, UPS (Uninterruptible Power Supply), etc. Its low RDS(ON) can effectively reduce losses and improve the conversion efficiency and stability of the power system.
2. **Power Tools**
- In power tools, T100N2-VB can be used as the main switching element to control the flow of battery current. Due to its high current capability and low loss characteristics, it is suitable for battery-powered systems of high-power power tools to ensure efficient and safe operation.
3. **Battery Management System (BMS)**
- The high current carrying capacity of T100N2-VB makes it very suitable for battery management systems, especially those battery charge and discharge management modules that need to handle high currents. It can effectively regulate the current flow of the battery, ensuring efficient and safe battery charging and discharging.
4. **LED Driver**
- In LED driver, T100N2-VB can be used to provide stable current output, especially in low voltage and high current scenarios. Low on-resistance enables it to maintain low power loss when handling high current, improving the brightness and service life of the LED.
5. **Automotive Electronics**
- T100N2-VB can also be used in the automotive electronics field, especially for battery management and power conversion systems for electric vehicles (EV) and hybrid electric vehicles (HEV). Its efficient switching performance and low loss characteristics enable it to optimize power transmission in automotive power systems, improving overall energy efficiency and system stability.
Through these application examples, the T100N2-VB MOSFET is able to provide stable and efficient performance in a variety of applications requiring high current and low voltage, and is suitable for use in various power control and power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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