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SWF7N90-VB Product details
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SWF7N90-VB Product Introduction
**Model**: SWF7N90-VB
**Package**: TO220F
**Configuration**: Single-N-Channel
**Maximum drain-source voltage (VDS)**: 900V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 1500mΩ (@VGS=10V)
**Maximum drain current (ID)**: 5A
**Technology**: SJ_Multi-EPI (Multiple Floating Gate Technology)
SWF7N90-VB is an N-channel MOSFET in TO220F package, suitable for high voltage applications, with high drain-source voltage (VDS) and low on-resistance. The product adopts advanced SJ_Multi-EPI technology to ensure its efficient switching performance and low loss characteristics. Its maximum drain current (ID) is 5A, suitable for power management and high power applications.
**Model**: SWF7N90-VB
**Package**: TO220F
**Configuration**: Single-N-Channel
**Maximum drain-source voltage (VDS)**: 900V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 1500mΩ (@VGS=10V)
**Maximum drain current (ID)**: 5A
**Technology**: SJ_Multi-EPI (Multiple Floating Gate Technology)
SWF7N90-VB is an N-channel MOSFET in TO220F package, suitable for high voltage applications, with high drain-source voltage (VDS) and low on-resistance. The product adopts advanced SJ_Multi-EPI technology to ensure its efficient switching performance and low loss characteristics. Its maximum drain current (ID) is 5A, suitable for power management and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed product parameter description
- **VDS (maximum drain-source voltage)**: 900V
This parameter indicates that the SWF7N90-VB can withstand a maximum drain-source voltage of 900V under normal working conditions, which is suitable for applications in high-voltage power supplies and industrial equipment.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports a maximum gate-source voltage of ±30V, making it compatible with a variety of drive circuits and has good switching control capabilities.
- **Vth (threshold voltage)**: 3.5V
The MOSFET has a threshold voltage of 3.5V, that is, when the gate-source voltage is greater than 3.5V, the MOSFET starts to turn on. This feature makes it very suitable for low-voltage control circuits.
- **RDS(ON) (On-resistance)**: 1500mΩ (@VGS=10V)
The on-resistance of this MOSFET is relatively low, which can reduce power loss and is more advantageous in high current applications. As the gate voltage increases, the on-resistance gradually decreases, thereby improving efficiency.
- **ID (Maximum drain current)**: 5A
At the maximum drain-source voltage and standard conditions, the SWF7N90-VB can withstand a maximum drain current of 5A, suitable for medium power applications.
- **Package type**: TO220F
This MOSFET adopts the TO220F package, which provides good thermal management and mechanical strength for high power applications.
- **Technology**: SJ_Multi-EPI
The use of multi-floating gate technology can optimize the conduction characteristics, reduce conduction losses, and improve switching efficiency.
- **VDS (maximum drain-source voltage)**: 900V
This parameter indicates that the SWF7N90-VB can withstand a maximum drain-source voltage of 900V under normal working conditions, which is suitable for applications in high-voltage power supplies and industrial equipment.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports a maximum gate-source voltage of ±30V, making it compatible with a variety of drive circuits and has good switching control capabilities.
- **Vth (threshold voltage)**: 3.5V
The MOSFET has a threshold voltage of 3.5V, that is, when the gate-source voltage is greater than 3.5V, the MOSFET starts to turn on. This feature makes it very suitable for low-voltage control circuits.
- **RDS(ON) (On-resistance)**: 1500mΩ (@VGS=10V)
The on-resistance of this MOSFET is relatively low, which can reduce power loss and is more advantageous in high current applications. As the gate voltage increases, the on-resistance gradually decreases, thereby improving efficiency.
- **ID (Maximum drain current)**: 5A
At the maximum drain-source voltage and standard conditions, the SWF7N90-VB can withstand a maximum drain current of 5A, suitable for medium power applications.
- **Package type**: TO220F
This MOSFET adopts the TO220F package, which provides good thermal management and mechanical strength for high power applications.
- **Technology**: SJ_Multi-EPI
The use of multi-floating gate technology can optimize the conduction characteristics, reduce conduction losses, and improve switching efficiency.
Domain and module applications：
Applicable fields and modules
SWF7N90-VB is widely used in the following fields due to its high VDS and moderate on-resistance:
1. **Power management system**:
The high VDS and low on-resistance characteristics of this MOSFET make it very suitable for power modules such as switching power supplies (SMPS), DC-DC converters, power factor correction (PFC). Especially in applications requiring high efficiency and high voltage tolerance, SWF7N90-VB is able to provide stable performance and low losses.
2. **Industrial power equipment**:
Suitable for industrial power control systems such as frequency converters, inverters, UPS power supplies, etc. These devices usually require MOSFETs that can withstand higher voltages and maintain efficient performance during frequent switching operations.
3. **Electric vehicle charging system**:
Due to the high voltage and current carrying capacity of SWF7N90-VB, it is also widely used in applications such as electric vehicle chargers, inverters, and charging stations, especially those systems that require high voltage power management.
4. **Consumer electronics and communication equipment**:
SWF7N90-VB is suitable for power management modules in various consumer electronic products, especially those that require higher voltage and current, such as TVs, audio equipment, wireless communication equipment, etc.
5. **High-voltage switch control module**:
The high VDS of this MOSFET makes it suitable for switching circuits that need to handle higher voltages, such as high-voltage relays, power switches, etc. It can work efficiently and stably in a high-voltage environment to ensure the safe and reliable operation of the equipment.
6. **Automotive electronics**:
In automotive power systems (such as electric drive systems, on-board power systems, etc.), SWF7N90-VB can also be used as a power switch, especially in application scenarios requiring high voltage and high efficiency.
Through the above analysis, SWF7N90-VB is a MOSFET suitable for a variety of high voltage and power control. With its high VDS, high ID and low on-resistance, it can provide reliable switching control for multiple high-efficiency, high-voltage power systems.
SWF7N90-VB is widely used in the following fields due to its high VDS and moderate on-resistance:
1. **Power management system**:
The high VDS and low on-resistance characteristics of this MOSFET make it very suitable for power modules such as switching power supplies (SMPS), DC-DC converters, power factor correction (PFC). Especially in applications requiring high efficiency and high voltage tolerance, SWF7N90-VB is able to provide stable performance and low losses.
2. **Industrial power equipment**:
Suitable for industrial power control systems such as frequency converters, inverters, UPS power supplies, etc. These devices usually require MOSFETs that can withstand higher voltages and maintain efficient performance during frequent switching operations.
3. **Electric vehicle charging system**:
Due to the high voltage and current carrying capacity of SWF7N90-VB, it is also widely used in applications such as electric vehicle chargers, inverters, and charging stations, especially those systems that require high voltage power management.
4. **Consumer electronics and communication equipment**:
SWF7N90-VB is suitable for power management modules in various consumer electronic products, especially those that require higher voltage and current, such as TVs, audio equipment, wireless communication equipment, etc.
5. **High-voltage switch control module**:
The high VDS of this MOSFET makes it suitable for switching circuits that need to handle higher voltages, such as high-voltage relays, power switches, etc. It can work efficiently and stably in a high-voltage environment to ensure the safe and reliable operation of the equipment.
6. **Automotive electronics**:
In automotive power systems (such as electric drive systems, on-board power systems, etc.), SWF7N90-VB can also be used as a power switch, especially in application scenarios requiring high voltage and high efficiency.
Through the above analysis, SWF7N90-VB is a MOSFET suitable for a variety of high voltage and power control. With its high VDS, high ID and low on-resistance, it can provide reliable switching control for multiple high-efficiency, high-voltage power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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