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SWF7N65K-VB Product details

Product introduction:

**SWF7N65K-VB MOSFET Product Introduction**

SWF7N65K-VB is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of up to 9A. This MOSFET adopts TO220F package and is suitable for various high-voltage applications, especially those requiring high efficiency and low switching losses. Using SJ_Multi-EPI technology, this product provides excellent conduction efficiency and thermal stability. Its turn-on voltage (Vth) is 3.5V, ensuring efficient switching operation with low driving voltage, which is suitable for power conversion, switching power supplies and other high-current, high-voltage circuit designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 9A 550mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
**SWF7N65K-VB MOSFET detailed parameter description**

- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 550mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Power loss (Pd)**: 94W
- **Operating temperature range**: -55°C to +150°C
- **Maximum drain-source current (ID)**: 9A
- **Maximum power loss (Pd)**: 94W

Domain and module applications:

**SWF7N65K-VB MOSFET Application Examples**

The high voltage and high current handling capabilities of the SWF7N65K-VB make it very suitable for a variety of industrial applications. Here are some typical application areas and module examples:

1. **Power Management System**
- In a high-efficiency switching power supply (SMPS), the SWF7N65K-VB is able to provide high voltage and high current switching characteristics. Through its low RDS(ON) value, it can effectively reduce switching losses and improve power conversion efficiency, especially in 12V/24V power conversion applications.

2. **Power Amplifier**
- Due to its low on-resistance, this MOSFET performs well in audio amplifiers and RF amplifiers, providing strong current driving capabilities, especially for applications requiring high power output and low temperature rise.

3. **Electric Vehicles (EV) and Charging Stations**
- In the power conversion modules of electric vehicle drive circuits and charging stations, the SWF7N65K-VB provides excellent voltage tolerance and high current output, suitable for battery charging and energy conversion systems.

4. **Motor Drive and Industrial Control**
- In the field of industrial automation, especially for motor drive and inverter control, this MOSFET can handle high voltage and current, support precise current control and high-efficiency conversion.

5. **High-voltage DC-DC Converters**
- In high-voltage DC-DC converters, the SWF7N65K-VB can efficiently convert power, especially for solar power generation systems and other scenarios that require high-voltage stable output.

From these examples, it can be seen that the SWF7N65K-VB has a wide range of applicability in multiple high-voltage and high-current applications, and can provide excellent performance and high efficiency to help improve the energy efficiency and reliability of the entire system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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