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SWD100N03-VB Product details

Product introduction:

SWD100N03-VB MOSFET Product Introduction

SWD100N03-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications, with a maximum drain-source voltage (V_DS) of 30V and a maximum drain current (I_D) of 100A. The device uses Trench technology to ensure low on-resistance (R_DS(ON)), which is 3mΩ and 2mΩ at gate-source voltages of 4.5V and 10V respectively, providing higher energy efficiency and lower power loss.

Due to its excellent conductive performance and low switching losses, SWD100N03-VB is ideal in systems that require high-speed switching and high current transmission. It is suitable for various applications such as power management, power conversion, DC-DC converters, etc., and can effectively improve circuit efficiency and reduce heat generation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 100A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SWD100N03-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Configuration**: Unipolar N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 100A
- **Technology type**: Trench

Domain and module applications:

SWD100N03-VB MOSFET Applications and Modules

1. **DC-DC Converter**:
The low on-resistance and high current handling capability of SWD100N03-VB make it an ideal choice for high-efficiency DC-DC converters, especially in applications that need to handle high current and low voltage. It can effectively improve power conversion efficiency and reduce heat loss during the conversion process, and is suitable for power modules such as power adapters, chargers, and inverters.

2. **Power Management System**:
In the power management system, SWD100N03-VB can provide efficient current transmission, especially for applications with high current requirements, such as server power supplies, consumer electronics, network communication equipment, etc. This MOSFET can effectively reduce power loss during power conversion, thereby extending battery life or improving power efficiency.

3. **Power Tools and Battery Charging Systems**:
In power tools and battery charging systems, the SWD100N03-VB can be used as a switching element in a battery management system (BMS) to manage the battery charging and discharging process. Its high current capability enables it to provide stable current control when the battery is rapidly charged and discharged, thereby ensuring battery life and safety.

4. **Automotive Electronics and Electric Vehicles (EV)**:
SWD100N03-VB can be used in battery management systems, power conversion modules, and motor drive systems in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high current carrying capacity and low on-resistance ensure high efficiency and stability of the system in high-power demanding environments.

5. **Consumer Electronics**:
Due to its low power consumption and high efficiency, the SWD100N03-VB is also very suitable for consumer electronics such as mobile phones, laptops, smart wearable devices, etc., which require efficient power management and fast charging functions. It optimizes the charging efficiency and thermal management of the battery inside the device.

6. **Photovoltaic Systems and Inverters**:
In solar photovoltaic systems, the SWD100N03-VB can be used in solar inverters to convert direct current (DC) to alternating current (AC). Its low on-resistance and high current capability help improve the efficiency of the system and reduce the energy loss and heat generation of the system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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