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SW830A-VB TO220F Product details
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**SW830A-VB MOSFET Product Introduction**
**SW830A-VB** is a **single N-channel MOSFET** in a **TO220F package**, designed for high-voltage, high-current power management and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is **650V**, the maximum drain current (ID) is **7A**, and it has an **1100mΩ** on-resistance (RDS(ON) @ VGS=10V). It uses **Plannar** technology to ensure good switching performance and stable conduction characteristics. It is suitable for applications requiring high voltage, low on-resistance and high switching efficiency, such as power adapters, inverters, motor drive systems, and various types of power conversion equipment.
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**SW830A-VB** is a **single N-channel MOSFET** in a **TO220F package**, designed for high-voltage, high-current power management and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is **650V**, the maximum drain current (ID) is **7A**, and it has an **1100mΩ** on-resistance (RDS(ON) @ VGS=10V). It uses **Plannar** technology to ensure good switching performance and stable conduction characteristics. It is suitable for applications requiring high voltage, low on-resistance and high switching efficiency, such as power adapters, inverters, motor drive systems, and various types of power conversion equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
**Detailed parameter description**
- **Package type**: TO220F
**TO220F** The package provides excellent heat dissipation capability, suitable for high-power applications, can effectively reduce thermal resistance, and ensure the stable operation of MOSFET, especially suitable for environments that require high current carrying and high heat dissipation.
- **Configuration**: Single N-channel
MOSFETs with N-channel structure usually have lower on-resistance and higher switching efficiency, suitable for current control and high-efficiency switching applications.
- **Maximum drain-source voltage (VDS)**: 650V
**VDS = 650V**, this MOSFET can withstand higher voltages and is suitable for use in high-voltage power modules and power conversion equipment, such as power adapters, inverters and other high-voltage working environments.
- **Maximum gate-source voltage (VGS)**: ±30V
**VGS = ±30V**, the gate-source voltage range of this MOSFET is large, which can adapt to a variety of control circuits and drive voltage configurations, and has good control flexibility.
- **Threshold voltage (Vth)**: 3.5V
**Vth = 3.5V**, this threshold voltage is moderate, ensuring the reliability and response speed of the switch, suitable for a wide range of power applications.
- **On-resistance (RDS(ON))**:
- **1100mΩ** @ VGS = 10V
At **VGS = 10V**, the on-resistance is **1100mΩ**. Although this value is relatively high, it still provides good conductivity for general power applications and is suitable for applications with light loads.
- **Maximum Drain Current (ID)**: 7A
**ID = 7A**, this MOSFET can handle relatively high currents and is suitable for power management scenarios that require medium current control.
- **Technology**: Plannar
**Plannar** technology is used to ensure good stability, low switching losses and small current conduction losses under high voltage and high frequency operating conditions.
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- **Package type**: TO220F
**TO220F** The package provides excellent heat dissipation capability, suitable for high-power applications, can effectively reduce thermal resistance, and ensure the stable operation of MOSFET, especially suitable for environments that require high current carrying and high heat dissipation.
- **Configuration**: Single N-channel
MOSFETs with N-channel structure usually have lower on-resistance and higher switching efficiency, suitable for current control and high-efficiency switching applications.
- **Maximum drain-source voltage (VDS)**: 650V
**VDS = 650V**, this MOSFET can withstand higher voltages and is suitable for use in high-voltage power modules and power conversion equipment, such as power adapters, inverters and other high-voltage working environments.
- **Maximum gate-source voltage (VGS)**: ±30V
**VGS = ±30V**, the gate-source voltage range of this MOSFET is large, which can adapt to a variety of control circuits and drive voltage configurations, and has good control flexibility.
- **Threshold voltage (Vth)**: 3.5V
**Vth = 3.5V**, this threshold voltage is moderate, ensuring the reliability and response speed of the switch, suitable for a wide range of power applications.
- **On-resistance (RDS(ON))**:
- **1100mΩ** @ VGS = 10V
At **VGS = 10V**, the on-resistance is **1100mΩ**. Although this value is relatively high, it still provides good conductivity for general power applications and is suitable for applications with light loads.
- **Maximum Drain Current (ID)**: 7A
**ID = 7A**, this MOSFET can handle relatively high currents and is suitable for power management scenarios that require medium current control.
- **Technology**: Plannar
**Plannar** technology is used to ensure good stability, low switching losses and small current conduction losses under high voltage and high frequency operating conditions.
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Domain and module applications：
**Application fields and module examples**
1. **Switching Power Supply (SMPS)**
SW830A-VB is very suitable for **switching power supply (SMPS)**, especially **AC-DC converter**, **DC-DC converter** and **LED driver**. Its high voltage tolerance and good conduction characteristics enable it to effectively control current and achieve efficient power conversion.
2. **Power Adapter**
This MOSFET can be used in **power adapter**, such as **charger** and **battery management system**, to provide stable control for high-power power conversion. Its high voltage resistance enables it to work stably in power-intensive devices.
3. **Inverter**
**SW830A-VB** can be widely used in **inverters**, especially **solar inverter** and **wind inverter**. Its 650V withstand voltage and 7A leakage current capability enable it to switch efficiently and maintain stable output during power conversion.
4. **Motor drive system**
In **motor drive system**, SW830A-VB is suitable for **industrial automation motor control** and **power tools**, providing precise current regulation and efficient switch control to ensure stable operation of motors under various loads.
5. **High-voltage power module**
This MOSFET is an ideal choice for **high-voltage power modules**, especially in **high-voltage power systems**, such as power electronic equipment and industrial power modules. It can effectively handle 650V voltage and support 7A current load, ensuring the stability of the power system.
6. **Power converter**
In **power converter**, SW830A-VB can be applied to **electric vehicle chargers** and **power conversion systems**. Its high voltage tolerance and low on-resistance ensure high efficiency and stability during charging.
7. **Home appliance power management**
**SW830A-VB** is also widely used in **home appliance power management**, especially in **home appliance power modules** such as **air conditioners, electric water heaters, refrigerators, etc. This MOSFET provides stable power management and can effectively control the power conversion of home appliances.
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1. **Switching Power Supply (SMPS)**
SW830A-VB is very suitable for **switching power supply (SMPS)**, especially **AC-DC converter**, **DC-DC converter** and **LED driver**. Its high voltage tolerance and good conduction characteristics enable it to effectively control current and achieve efficient power conversion.
2. **Power Adapter**
This MOSFET can be used in **power adapter**, such as **charger** and **battery management system**, to provide stable control for high-power power conversion. Its high voltage resistance enables it to work stably in power-intensive devices.
3. **Inverter**
**SW830A-VB** can be widely used in **inverters**, especially **solar inverter** and **wind inverter**. Its 650V withstand voltage and 7A leakage current capability enable it to switch efficiently and maintain stable output during power conversion.
4. **Motor drive system**
In **motor drive system**, SW830A-VB is suitable for **industrial automation motor control** and **power tools**, providing precise current regulation and efficient switch control to ensure stable operation of motors under various loads.
5. **High-voltage power module**
This MOSFET is an ideal choice for **high-voltage power modules**, especially in **high-voltage power systems**, such as power electronic equipment and industrial power modules. It can effectively handle 650V voltage and support 7A current load, ensuring the stability of the power system.
6. **Power converter**
In **power converter**, SW830A-VB can be applied to **electric vehicle chargers** and **power conversion systems**. Its high voltage tolerance and low on-resistance ensure high efficiency and stability during charging.
7. **Home appliance power management**
**SW830A-VB** is also widely used in **home appliance power management**, especially in **home appliance power modules** such as **air conditioners, electric water heaters, refrigerators, etc. This MOSFET provides stable power management and can effectively control the power conversion of home appliances.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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