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SW80N06V1-VB TO251 Product details
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Product Introduction
**SW80N06V1-VB** is a high-performance N-Channel MOSFET in TO251 package, suitable for high voltage and high current switching applications. It has a drain-source voltage (V_DS) of 60V and a low on-resistance (R_DS(on)), which can effectively reduce power loss and improve efficiency. This MOSFET uses Trench technology, which optimizes the switching characteristics and conductivity of the device, thereby improving overall efficiency and reliability.
The maximum drain current of SW80N06V1-VB MOSFET is 97A, and it performs well in high current applications. Its excellent on-resistance (R_DS(on)) characteristics make it suitable for modules such as high-efficiency power supplies, inverters, and DC-DC converters. Its threshold voltage is 2.5V, which is suitable for various circuits requiring low voltage drive, and it has wide adaptability and high power carrying capacity.
**SW80N06V1-VB** is a high-performance N-Channel MOSFET in TO251 package, suitable for high voltage and high current switching applications. It has a drain-source voltage (V_DS) of 60V and a low on-resistance (R_DS(on)), which can effectively reduce power loss and improve efficiency. This MOSFET uses Trench technology, which optimizes the switching characteristics and conductivity of the device, thereby improving overall efficiency and reliability.
The maximum drain current of SW80N06V1-VB MOSFET is 97A, and it performs well in high current applications. Its excellent on-resistance (R_DS(on)) characteristics make it suitable for modules such as high-efficiency power supplies, inverters, and DC-DC converters. Its threshold voltage is 2.5V, which is suitable for various circuits requiring low voltage drive, and it has wide adaptability and high power carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 97A
- **Technology**: Trench
- **Maximum power consumption**: 40W (may vary according to application environment)
- **Operating temperature range**: -55°C to 150°C
- **Maximum pulse current**: 250A (peak)
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(on))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 97A
- **Technology**: Trench
- **Maximum power consumption**: 40W (may vary according to application environment)
- **Operating temperature range**: -55°C to 150°C
- **Maximum pulse current**: 250A (peak)
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**
The low on-resistance of SW80N06V1-VB makes it very suitable for power management systems, especially in applications that require high efficiency. It can be used in systems such as **DC-DC converters**, **AC-DC power adapters**, and **battery chargers** to effectively reduce energy losses and improve conversion efficiency.
2. **Electric vehicle (EV) charging system**
The high drain current carrying capacity and low on-resistance of this MOSFET make it suitable for charging modules of electric vehicles (EVs), especially in fast charging systems. It can handle higher currents, provide stable power conversion efficiency, and enhance system reliability.
3. **Inverter and solar power generation system**
In solar photovoltaic systems and other inverter applications, SW80N06V1-VB MOSFET can be used in **DC-AC inverters**, where its low on-resistance and high current capacity can improve power conversion efficiency, reduce energy losses, and ensure efficient operation of the system.
4. **Power Tools and Portable Devices**
In the power systems of portable power tools and other mobile devices, SW80N06V1-VB can also provide efficient power switching, reduce power consumption and increase usage time, especially suitable for battery-driven devices.
5. **Power Transmission and Distribution Systems**
The high current carrying capacity of this MOSFET makes it suitable for power transmission and distribution systems, especially in scenarios that require fast switching and high efficiency, such as power switches and current regulation modules in **smart grids**.
Through its efficient switching performance and durability, SW80N06V1-VB MOSFET is widely used in many fields to help improve the overall efficiency, reliability and power performance of the system.
1. **High-efficiency power management**
The low on-resistance of SW80N06V1-VB makes it very suitable for power management systems, especially in applications that require high efficiency. It can be used in systems such as **DC-DC converters**, **AC-DC power adapters**, and **battery chargers** to effectively reduce energy losses and improve conversion efficiency.
2. **Electric vehicle (EV) charging system**
The high drain current carrying capacity and low on-resistance of this MOSFET make it suitable for charging modules of electric vehicles (EVs), especially in fast charging systems. It can handle higher currents, provide stable power conversion efficiency, and enhance system reliability.
3. **Inverter and solar power generation system**
In solar photovoltaic systems and other inverter applications, SW80N06V1-VB MOSFET can be used in **DC-AC inverters**, where its low on-resistance and high current capacity can improve power conversion efficiency, reduce energy losses, and ensure efficient operation of the system.
4. **Power Tools and Portable Devices**
In the power systems of portable power tools and other mobile devices, SW80N06V1-VB can also provide efficient power switching, reduce power consumption and increase usage time, especially suitable for battery-driven devices.
5. **Power Transmission and Distribution Systems**
The high current carrying capacity of this MOSFET makes it suitable for power transmission and distribution systems, especially in scenarios that require fast switching and high efficiency, such as power switches and current regulation modules in **smart grids**.
Through its efficient switching performance and durability, SW80N06V1-VB MOSFET is widely used in many fields to help improve the overall efficiency, reliability and power performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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