SW7N65K2-VB TO251 Product details
Product introduction:
**SW7N65K2-VB** is a high-performance single N-channel MOSFET in TO251 package, suitable for high voltage (650V) and high current (9A) applications. This MOSFET has a low on-resistance (R_DS(ON)) of 500mΩ (@V_GS = 10V) and adopts SJ_Multi-EPI technology, which can effectively reduce conduction losses and improve switching efficiency. It has a high drain voltage tolerance (650V) and is suitable for power management systems that require high voltage and high efficiency. SW7N65K2-VB is suitable for a wide range of applications in switching power supplies, inverters, power electronics and electric vehicles.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type:** TO251
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (V_DS):** 650V
- **Gate-source voltage (V_GS):** ±30V
- **Threshold voltage (V_th):** 3.5V
- **On-resistance (R_DS(ON)):**
- 500mΩ (@ V_GS = 10V)
- **Maximum leakage current (I_D):** 9A
- **Technology:** SJ_Multi-EPI
Domain and module applications:
**Switching Power Supplies:**
SW7N65K2-VB is suitable for various switching power supplies (SMPS), including DC-DC converters, AC-DC power adapters, and power systems for high voltage ranges. Due to its low on-resistance (500mΩ), it helps reduce power losses during the conversion process and ensures efficient power conversion. This makes this MOSFET an indispensable key component in high-efficiency power supply design.
**Solar Inverters:**
In solar inverters, SW7N65K2-VB can be used as a high-voltage (650V) switching element to help convert direct current (DC) generated by solar energy into alternating current (AC). Its low on-resistance and high withstand voltage characteristics make it an ideal choice in solar systems, which can effectively improve inverter efficiency and reduce energy loss, providing stable power output.
**Electric Vehicles:**
The SW7N65K2-VB is suitable for electric vehicle (EV) power control systems, such as battery management systems (BMS) and drive motor control modules. It can effectively handle higher voltage and current requirements, helping to improve the power conversion efficiency of EV systems while ensuring stable performance and long service life.
**Industrial Power Supplies:**
In the industrial field, the SW7N65K2-VB can be used in high-power power systems, such as industrial automation control, power tools, servo drive systems, etc. The high voltage handling capability and low conduction loss provided by this MOSFET make it excel in these applications that require high efficiency and reliability.
**Battery Chargers:**
This MOSFET can be used in battery charger systems, especially for applications with high voltage and high current charging requirements, such as lithium battery chargers. Due to its lower on-resistance, SW7N65K2-VB can reduce the heat generated during charging, improve charging efficiency, and ensure the safety and stability of the battery charging process.
**Power Electronics Devices:**
In power electronic devices, SW7N65K2-VB can be used in high-power modules such as inverters, DC motor drives, etc. These devices usually require high-voltage, high-current and high-efficiency switching elements. SW7N65K2-VB ensures high efficiency and low energy loss of the system through its excellent on-performance and switching characteristics.
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