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SW50N06A-VB Product details

Product introduction:

SW50N06A-VB MOSFET Product Introduction

SW50N06A-VB is a unipolar N-channel MOSFET in TO252 package, designed for high-efficiency switching circuits and power management applications. This MOSFET has a drain-source voltage (V_DS) of 60V and can withstand large current loads (maximum 58A), making it suitable for electronic devices that require high power and high efficiency. The use of Trench technology gives it a lower on-resistance (R_DS(ON)), ensuring low power loss, and is particularly suitable for high-efficiency power conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SW50N06A-VB MOSFET detailed parameter description

- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 13mΩ (V_GS = 4.5V)
- 10mΩ (V_GS = 10V)
- **Maximum leakage current (I_D)**: 58A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: Suitable for high power density applications. The specific maximum power dissipation can be determined according to the application environment and heat dissipation conditions.

Domain and module applications:

SW50N06A-VB MOSFET Application Fields and Modules

1. **Power Management Module**:
- This MOSFET is widely used in power management modules, especially in high-efficiency switching power supplies (SMPS) as a high-frequency switching element. Its low on-resistance and large current carrying capacity enable it to provide lower power loss in high-efficiency power supplies and improve the overall energy efficiency of the system.

2. **DC-DC Converter**:
- In the DC-DC converter, SW50N06A-VB can be used as a switch tube to help achieve efficient voltage conversion. The 60V voltage tolerance and 58A high current capacity of this MOSFET are particularly suitable for applications that require fast switching and low power loss, such as solar inverters and high-power LED driver power supplies.

3. **Battery Management System (BMS)**:
- In the battery management system, this MOSFET can be used to control power transmission during battery charging and discharging, ensuring charging efficiency and protecting the battery from over-discharge. Its low R_DS(ON) value means that it can effectively reduce heat loss when charging and extend battery life.

4. **Power Tools and Drive Systems**:
- SW50N06A-VB is also used in power tools (such as electric drills, garden tools), especially as a power switch in drive systems. Its high current carrying capacity and high switching frequency enable it to efficiently drive electric motors and provide more stable power output.

5. **Automotive Electronic Modules**:
- In automotive electronic systems, SW50N06A-VB can be used as a key switching element in battery management, charging control and power conversion modules. Its durability and high current carrying capacity make it suitable for various automotive applications, such as on-board chargers and drive systems for electric vehicles.

In summary, the SW50N06A-VB MOSFET is suitable for a wide range of electronic applications requiring high efficiency and low power loss, such as power management, DC-DC conversion, battery management systems, power tool drive systems, and automotive electronic modules due to its low on-resistance and high current carrying capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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