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SW4N70K-VB TO220F Product details
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**SW4N70K-VB TO220F - Product Introduction**
SW4N70K-VB is a high voltage N-channel MOSFET in TO220F package, suitable for various high power switching applications. The product has a drain-to-source voltage (VDS) of 700V and a maximum gate drive voltage of 30V (±V). Its gate threshold voltage (Vth) is 3.5V, which ensures a low on-resistance (RDS(ON) = 1100mΩ@VGS=10V) and can carry up to 5A of continuous drain current (ID). SW4N70K-VB adopts advanced SJ_Multi-EPI technology, which makes it have high efficiency and high stability in power conversion and power management applications. The device is suitable for various high voltage switching power supplies, inverters and power electronic devices, with low switching losses and thermal losses, improving the overall performance and reliability of the system.
SW4N70K-VB is a high voltage N-channel MOSFET in TO220F package, suitable for various high power switching applications. The product has a drain-to-source voltage (VDS) of 700V and a maximum gate drive voltage of 30V (±V). Its gate threshold voltage (Vth) is 3.5V, which ensures a low on-resistance (RDS(ON) = 1100mΩ@VGS=10V) and can carry up to 5A of continuous drain current (ID). SW4N70K-VB adopts advanced SJ_Multi-EPI technology, which makes it have high efficiency and high stability in power conversion and power management applications. The device is suitable for various high voltage switching power supplies, inverters and power electronic devices, with low switching losses and thermal losses, improving the overall performance and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
**SW4N70K-VB TO220F - Detailed Parameter Description**
| Parameters| Description|
|---------------------|------------------------------------------------|
| **Package** | TO220F |
| **Configuration** | Single N-Channel MOSFET |
| **VDS** | 700V |
| **VGS** | ±30V |
| **Vth** | 3.5V |
| **RDS(ON)** | 1100mΩ @ VGS=10V |
| **ID** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Maximum Drain Power Loss** | Varies depending on thermal conditions and application|
| **Maximum Gate Drive Current** | 100nA |
| **Switching Characteristics** | Suitable for high efficiency switch mode power conversion, low switching losses|
| **Operating Temperature Range** | -55°C to +150°C (max junction temperature) |
| **Quiescent current** | Very low leakage current for high efficiency and low power designs |
| Parameters| Description|
|---------------------|------------------------------------------------|
| **Package** | TO220F |
| **Configuration** | Single N-Channel MOSFET |
| **VDS** | 700V |
| **VGS** | ±30V |
| **Vth** | 3.5V |
| **RDS(ON)** | 1100mΩ @ VGS=10V |
| **ID** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Maximum Drain Power Loss** | Varies depending on thermal conditions and application|
| **Maximum Gate Drive Current** | 100nA |
| **Switching Characteristics** | Suitable for high efficiency switch mode power conversion, low switching losses|
| **Operating Temperature Range** | -55°C to +150°C (max junction temperature) |
| **Quiescent current** | Very low leakage current for high efficiency and low power designs |
Domain and module applications：
**SW4N70K-VB TO220F - Applications and Module Examples**
1. **High Voltage Power Module**
The high voltage withstand capability (VDS 700V) of the SW4N70K-VB makes it ideal for use in high voltage power converters. For example, in AC-DC converters and DC-DC converters in power electronics, this MOSFET as the main switch can effectively control the current flow, reduce switching losses, and improve system efficiency.
2. **Inverter Applications**
This MOSFET is also very suitable for inverter applications, especially in solar photovoltaic power generation systems. Due to its high withstand voltage and high conduction efficiency, the SW4N70K-VB can be used as a core switch in high-power inverters to ensure stable power conversion from DC power sources (such as solar panels) to AC loads (such as home grids).
3. **Electric Vehicle (EV) Charger**
In electric vehicle (EV) charging systems, SW4N70K-VB can be used as an efficient switching element in the power management circuit of the charger. Its high voltage withstand capability and low on-resistance ensure efficient conversion of electrical energy during charging and reduce heat loss in the system.
4. **Power Supply and UPS System**
In an uninterruptible power supply (UPS) system, SW4N70K-VB acts as the main switch, which can quickly switch power when power is interrupted to keep the equipment powered continuously. Due to its high voltage and high current withstand capability, it can provide a stable output voltage and ensure the reliability of the power supply.
5. **Motor Drive System**
SW4N70K-VB is also suitable for efficient motor drive systems, especially in motor control systems that require precise control. For example, as a switching element in power tools, electric vehicle drive systems or industrial motor drives, it can control the start and operation of the motor with low switching losses and high reliability.
In summary, the SW4N70K-VB MOSFET is very suitable for use in efficient power conversion, power management, inverters, chargers, and various electric drive and power control applications due to its high voltage withstand capability, low on-resistance, and excellent switching performance.
1. **High Voltage Power Module**
The high voltage withstand capability (VDS 700V) of the SW4N70K-VB makes it ideal for use in high voltage power converters. For example, in AC-DC converters and DC-DC converters in power electronics, this MOSFET as the main switch can effectively control the current flow, reduce switching losses, and improve system efficiency.
2. **Inverter Applications**
This MOSFET is also very suitable for inverter applications, especially in solar photovoltaic power generation systems. Due to its high withstand voltage and high conduction efficiency, the SW4N70K-VB can be used as a core switch in high-power inverters to ensure stable power conversion from DC power sources (such as solar panels) to AC loads (such as home grids).
3. **Electric Vehicle (EV) Charger**
In electric vehicle (EV) charging systems, SW4N70K-VB can be used as an efficient switching element in the power management circuit of the charger. Its high voltage withstand capability and low on-resistance ensure efficient conversion of electrical energy during charging and reduce heat loss in the system.
4. **Power Supply and UPS System**
In an uninterruptible power supply (UPS) system, SW4N70K-VB acts as the main switch, which can quickly switch power when power is interrupted to keep the equipment powered continuously. Due to its high voltage and high current withstand capability, it can provide a stable output voltage and ensure the reliability of the power supply.
5. **Motor Drive System**
SW4N70K-VB is also suitable for efficient motor drive systems, especially in motor control systems that require precise control. For example, as a switching element in power tools, electric vehicle drive systems or industrial motor drives, it can control the start and operation of the motor with low switching losses and high reliability.
In summary, the SW4N70K-VB MOSFET is very suitable for use in efficient power conversion, power management, inverters, chargers, and various electric drive and power control applications due to its high voltage withstand capability, low on-resistance, and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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