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SW4N70D-VB TO252 Product details
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**SW4N70D-VB MOSFET Product Introduction**
**SW4N70D-VB** is an **N-channel power MOSFET** in a **TO252** package, suitable for high voltage and medium current power switching applications. The device can withstand a maximum drain-source voltage (**VDS**) of **700V** and has an **2600mΩ** on-resistance (**RDS(ON)**) at **VGS=10V**. The MOSFET is manufactured using **Plannar** technology, has low switching losses and good thermal stability, and is suitable for various power conversion and control circuits. Its **Vth** is **3.5V**, making it compatible with standard drive circuits and able to meet the requirements of most applications. SW4N70D-VB is suitable for power management, motor control, LED lighting drive and other fields.
**SW4N70D-VB** is an **N-channel power MOSFET** in a **TO252** package, suitable for high voltage and medium current power switching applications. The device can withstand a maximum drain-source voltage (**VDS**) of **700V** and has an **2600mΩ** on-resistance (**RDS(ON)**) at **VGS=10V**. The MOSFET is manufactured using **Plannar** technology, has low switching losses and good thermal stability, and is suitable for various power conversion and control circuits. Its **Vth** is **3.5V**, making it compatible with standard drive circuits and able to meet the requirements of most applications. SW4N70D-VB is suitable for power management, motor control, LED lighting drive and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 4A | 2600mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
- **Package**: TO252
**TO252** package is a surface mount package, commonly used in medium power applications. It has good heat dissipation performance and can provide effective electrical connections in a limited space, suitable for low to medium power applications.
- **Configuration**: Single N-channel
Adopting **N-channel configuration**, this design enables MOSFET to provide lower on-resistance when powered on, suitable for power conversion applications, ensuring efficient switching performance.
- **VDS (drain-source voltage)**: 700V
**VDS** is **700V**, which can withstand drain-source voltages up to 700V, suitable for high voltage environments, and widely used in high voltage switching circuits such as power supplies and motor control.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports a gate-source voltage (VGS) of **±30V**, which is compatible with a variety of drive circuits and suitable for various standard control signals.
- **Vth (threshold voltage)**: 3.5V
**Vth** is **3.5V**, which means that the MOSFET will start to conduct when the gate voltage reaches about 3.5V, which is suitable for compatibility with circuits driven by **3.3V** or **5V** levels.
- **RDS(ON)（On-resistance）**:
- **3250mΩ** @ VGS=4.5V
- **2600mΩ** @ VGS=10V
The on-resistance is **2600mΩ** at **VGS=10V**, which is suitable for medium power switching circuits, has reasonable conduction efficiency, and is suitable for balancing performance and power loss.
- **ID（Maximum continuous leakage current）**: 4A
**ID** is **4A**, which is suitable for carrying medium current loads and is suitable for power switching applications that require a certain current to flow continuously.
- **Technology**: Plannar
Manufactured using **Plannar** technology, it has low on-resistance and good switching characteristics, and is suitable for high voltage power conversion applications. **Plannar** structure provides higher reliability and good thermal management performance.
---
- **Package**: TO252
**TO252** package is a surface mount package, commonly used in medium power applications. It has good heat dissipation performance and can provide effective electrical connections in a limited space, suitable for low to medium power applications.
- **Configuration**: Single N-channel
Adopting **N-channel configuration**, this design enables MOSFET to provide lower on-resistance when powered on, suitable for power conversion applications, ensuring efficient switching performance.
- **VDS (drain-source voltage)**: 700V
**VDS** is **700V**, which can withstand drain-source voltages up to 700V, suitable for high voltage environments, and widely used in high voltage switching circuits such as power supplies and motor control.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports a gate-source voltage (VGS) of **±30V**, which is compatible with a variety of drive circuits and suitable for various standard control signals.
- **Vth (threshold voltage)**: 3.5V
**Vth** is **3.5V**, which means that the MOSFET will start to conduct when the gate voltage reaches about 3.5V, which is suitable for compatibility with circuits driven by **3.3V** or **5V** levels.
- **RDS(ON)（On-resistance）**:
- **3250mΩ** @ VGS=4.5V
- **2600mΩ** @ VGS=10V
The on-resistance is **2600mΩ** at **VGS=10V**, which is suitable for medium power switching circuits, has reasonable conduction efficiency, and is suitable for balancing performance and power loss.
- **ID（Maximum continuous leakage current）**: 4A
**ID** is **4A**, which is suitable for carrying medium current loads and is suitable for power switching applications that require a certain current to flow continuously.
- **Technology**: Plannar
Manufactured using **Plannar** technology, it has low on-resistance and good switching characteristics, and is suitable for high voltage power conversion applications. **Plannar** structure provides higher reliability and good thermal management performance.
---
Domain and module applications：
**Application fields and module examples**
1. **High voltage power converters (AC-DC converters)**
**SW4N70D-VB** is ideal for **AC-DC power converters**, especially those that need to withstand high voltages (such as 700V). Its **700V** maximum drain-source voltage enables it to effectively handle high voltage inputs and convert them into lower DC voltage outputs. Applications include **power adapters**, **chargers**, and **power modules**.
2. **Motor drive systems**
This MOSFET is suitable for **motor drive circuits**, especially **DC motor** and **AC motor** control in high voltage and medium current environments. Its **VDS** is as high as **700V**, which is very suitable for the power switch part of **motor controller** or **inverter**, and can provide stable switching performance and efficient current control in motor control systems.
3. **Inverter Application**
In **solar inverter**, **wind power inverter** and other applications, **SW4N70D-VB** can be used as a key switching element. Because it can withstand **700V** high voltage, it can be used in high-voltage inverters that convert DC to AC, providing efficient energy conversion for the system.
4. **Power Factor Correction (PFC) Circuit**
This MOSFET plays an important role in **Power Factor Correction (PFC) Circuit**. It can help improve the power factor of **AC-DC power supply**, reduce the harmonic interference of the power supply, and thus improve the efficiency of the system. In **PFC power supply design**, SW4N70D-VB provides low on-resistance and high voltage handling capability, ensuring the high efficiency of the system.
5. **LED Driver**
In **LED lighting driver**, SW4N70D-VB is suitable for current control and power conversion. Since its **VDS** is as high as **700V**, it can handle larger voltages and is therefore suitable for high-power LED lighting applications, such as **high-power LED lighting systems** or **street lighting control power supplies**.
6. **High-voltage Switching Circuit**
In high-voltage switching circuits, SW4N70D-VB can be used as a **switching element** and is widely used in **high-voltage DC switching circuits** and **power electronic equipment**. Its **VDS** can meet the needs of high-voltage applications, such as **power conditioners** and **power switching modules**.
7. **Battery Management System (BMS)**
**SW4N70D-VB** can be used in the power switching part of **Battery Management System (BMS)** to help regulate the battery charging and discharging process and ensure the safety and efficiency of the battery system. Especially suitable for battery management systems that require high voltage handling capabilities.
8. **Uninterruptible Power Supply (UPS) System**
This MOSFET can be used in **Uninterruptible Power Supply (UPS)** systems to ensure that the battery continues to power the load when the power fails. Its **700V** withstand voltage capability makes it very suitable for use in medium-power UPS systems.
9. **Automotive Power Module**
In the power systems of **electric vehicles** and **hybrid vehicles**, the SW4N70D-VB can be used as a switching element in **DC-DC converters** or **battery management systems** to handle high voltage and medium current power conversion.
---
**SW4N70D-VB**, with its **700V** high voltage tolerance, moderate on-resistance and **4A** current capability, is suitable for **high voltage power converters**, **motor drive systems**, **inverters**, **PFC circuits**, **LED driver power supplies** and other fields, especially in power conversion and control applications requiring high voltage and high current. It has broad application prospects.
1. **High voltage power converters (AC-DC converters)**
**SW4N70D-VB** is ideal for **AC-DC power converters**, especially those that need to withstand high voltages (such as 700V). Its **700V** maximum drain-source voltage enables it to effectively handle high voltage inputs and convert them into lower DC voltage outputs. Applications include **power adapters**, **chargers**, and **power modules**.
2. **Motor drive systems**
This MOSFET is suitable for **motor drive circuits**, especially **DC motor** and **AC motor** control in high voltage and medium current environments. Its **VDS** is as high as **700V**, which is very suitable for the power switch part of **motor controller** or **inverter**, and can provide stable switching performance and efficient current control in motor control systems.
3. **Inverter Application**
In **solar inverter**, **wind power inverter** and other applications, **SW4N70D-VB** can be used as a key switching element. Because it can withstand **700V** high voltage, it can be used in high-voltage inverters that convert DC to AC, providing efficient energy conversion for the system.
4. **Power Factor Correction (PFC) Circuit**
This MOSFET plays an important role in **Power Factor Correction (PFC) Circuit**. It can help improve the power factor of **AC-DC power supply**, reduce the harmonic interference of the power supply, and thus improve the efficiency of the system. In **PFC power supply design**, SW4N70D-VB provides low on-resistance and high voltage handling capability, ensuring the high efficiency of the system.
5. **LED Driver**
In **LED lighting driver**, SW4N70D-VB is suitable for current control and power conversion. Since its **VDS** is as high as **700V**, it can handle larger voltages and is therefore suitable for high-power LED lighting applications, such as **high-power LED lighting systems** or **street lighting control power supplies**.
6. **High-voltage Switching Circuit**
In high-voltage switching circuits, SW4N70D-VB can be used as a **switching element** and is widely used in **high-voltage DC switching circuits** and **power electronic equipment**. Its **VDS** can meet the needs of high-voltage applications, such as **power conditioners** and **power switching modules**.
7. **Battery Management System (BMS)**
**SW4N70D-VB** can be used in the power switching part of **Battery Management System (BMS)** to help regulate the battery charging and discharging process and ensure the safety and efficiency of the battery system. Especially suitable for battery management systems that require high voltage handling capabilities.
8. **Uninterruptible Power Supply (UPS) System**
This MOSFET can be used in **Uninterruptible Power Supply (UPS)** systems to ensure that the battery continues to power the load when the power fails. Its **700V** withstand voltage capability makes it very suitable for use in medium-power UPS systems.
9. **Automotive Power Module**
In the power systems of **electric vehicles** and **hybrid vehicles**, the SW4N70D-VB can be used as a switching element in **DC-DC converters** or **battery management systems** to handle high voltage and medium current power conversion.
---
**SW4N70D-VB**, with its **700V** high voltage tolerance, moderate on-resistance and **4A** current capability, is suitable for **high voltage power converters**, **motor drive systems**, **inverters**, **PFC circuits**, **LED driver power supplies** and other fields, especially in power conversion and control applications requiring high voltage and high current. It has broad application prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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