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SW4N65K2-VB TO252 Product details

Product introduction:

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SW4N65K2-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, making it suitable for medium power and high voltage scenarios. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 850mΩ at VGS=10V, providing lower conduction losses and higher efficiency. The maximum drain current (ID) of SW4N65K2-VB is 5A, and it uses advanced SJ_Multi-EPI technology, which can improve its current carrying capacity and reliability and ensure higher operating stability. This MOSFET is particularly suitable for switching power supplies, power conversion modules, and other high-voltage, high-current power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 3.5V 5A 850mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 600V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 600V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
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- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 600V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 850mΩ (VGS=10V)
- **ID**: 5A
- **Technology**: SJ_Multi-EPI technology

Domain and module applications:


SW4N65K2-VB is suitable for a variety of high-voltage, high-efficiency power conversion applications. It can be widely used in power modules for AC-DC power supplies, DC-DC converters, power tools, battery management systems, and household appliances. In these applications, SW4N65K2-VB is able to provide high-voltage switching while ensuring low conduction losses and good current handling capabilities. Especially in power electronics and battery management systems, SW4N65K2-VB provides high current handling capabilities and can operate stably in higher voltage environments. In addition, this MOSFET is also very suitable for power modules for electric vehicle charging stations, power protection systems, and communication equipment, helping to improve efficiency and stability. Due to its low on-resistance and high current carrying capacity, it is also suitable for applications requiring lower power consumption, ensuring efficient operation of the entire system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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