中文
English
SW4N65DC-VB Product details
Back to previous pageProduct introduction：
**
SW4N65DC-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for high-voltage switching applications. Its drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V, which is suitable for medium-power power management and power conversion applications. The on-resistance (RDS(ON)) of this MOSFET is 2200mΩ at VGS=10V, and the maximum leakage current (ID) is 4A. SW4N65DC-VB uses planar technology (Plannar), providing relatively stable conduction characteristics and moderate switching performance, suitable for some application scenarios that are less sensitive to power loss.
**
SW4N65DC-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for high-voltage switching applications. Its drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V, which is suitable for medium-power power management and power conversion applications. The on-resistance (RDS(ON)) of this MOSFET is 2200mΩ at VGS=10V, and the maximum leakage current (ID) is 4A. SW4N65DC-VB uses planar technology (Plannar), providing relatively stable conduction characteristics and moderate switching performance, suitable for some application scenarios that are less sensitive to power loss.
**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (VGS=10V)
- **ID**: 4A
- **Technology**: Plannar
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (VGS=10V)
- **ID**: 4A
- **Technology**: Plannar
Domain and module applications：
SW4N65DC-VB is suitable for applications requiring medium current (up to 4A) and high voltage switching due to its high voltage tolerance of 650V. For example, it can be widely used in power modules (such as AC-DC converters), switching power supplies (SMPS), power tools, low-power motor control, power protection modules in household appliances and other fields. In these applications, SW4N65DC-VB can reliably carry high voltages and perform stable switching operations. Despite its relatively high on-resistance, SW4N65DC-VB is still suitable for power conversion scenarios where power loss requirements are not particularly stringent. In addition, its planar technology enables it to excel in some devices with limited budgets or low power density requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
