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SW4N65DA-VB TO251 Product details
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**SW4N65DA-VB MOSFET Product Introduction**
**SW4N65DA-VB** is an **N-channel power MOSFET**, packaged in **TO220F**, designed for medium and high voltage power applications. Its **VDS (drain-source voltage)** is as high as **650V**, which can withstand higher voltages and is suitable for high-voltage switching power supplies, motor drives and other power conversion modules. The **RDS(ON)** of the MOSFET is **2560mΩ** at **VGS=10V**, and the moderate on-resistance can ensure its balance between power loss and efficiency. The **Vth (threshold voltage)** of this MOSFET is **3.5V**, making it compatible with most standard voltage drive circuits. Manufactured using **Plannar** technology, it can provide higher power efficiency and lower switching losses, and is suitable for a variety of medium and high power applications.
**SW4N65DA-VB** is an **N-channel power MOSFET**, packaged in **TO220F**, designed for medium and high voltage power applications. Its **VDS (drain-source voltage)** is as high as **650V**, which can withstand higher voltages and is suitable for high-voltage switching power supplies, motor drives and other power conversion modules. The **RDS(ON)** of the MOSFET is **2560mΩ** at **VGS=10V**, and the moderate on-resistance can ensure its balance between power loss and efficiency. The **Vth (threshold voltage)** of this MOSFET is **3.5V**, making it compatible with most standard voltage drive circuits. Manufactured using **Plannar** technology, it can provide higher power efficiency and lower switching losses, and is suitable for a variety of medium and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**Detailed parameter description**
- **Package**: TO220F
**TO220F** package is a common power semiconductor package with good heat dissipation performance and is suitable for high-power applications. The package has a large thermal pin, which can effectively reduce the operating temperature of the device.
- **Configuration**: Single N-channel
The **Single N-channel** configuration enables this MOSFET to have a lower on-resistance when the current is on and can switch more efficiently, suitable for high-frequency and high-efficiency applications.
- **VDS (drain-source voltage)**: 650V
The maximum drain-source voltage of this MOSFET is **650V**, which enables it to adapt to high-voltage working environments and is often used in medium and high-voltage switching power supplies, power converters, inverters and other applications that need to withstand higher voltages.
- **VGS (gate-source voltage)**: ±30V
**VGS** supports **±30V** range, which provides flexible driving options and is compatible with most driving circuits, suitable for control systems with different voltage levels.
- **Vth (threshold voltage)**: 3.5V
**Vth (threshold voltage)** is **3.5V**, which means that the MOSFET can start to conduct at this voltage, which is suitable for compatibility with **3.3V** or **5V** logic level control circuits.
- **RDS(ON) (on-resistance)**: 2560mΩ @ VGS=10V
At **VGS=10V**, **RDS(ON)** is **2560mΩ**. The relatively high on-resistance means that the MOSFET will have some power loss under higher current conditions, but it can still work effectively in some low current applications.
- **ID (maximum continuous drain current)**: 4A
The maximum continuous drain current of this MOSFET is **4A**, which is suitable for applications with lower current carrying capacity and can operate stably in small and medium power power modules and motor drive circuits.
- **Technology**: Plannar
Manufactured using **Plannar** technology, this technology can provide lower on-resistance and more stable switching performance, suitable for use in medium power applications that require higher voltage and stable operation.
---
- **Package**: TO220F
**TO220F** package is a common power semiconductor package with good heat dissipation performance and is suitable for high-power applications. The package has a large thermal pin, which can effectively reduce the operating temperature of the device.
- **Configuration**: Single N-channel
The **Single N-channel** configuration enables this MOSFET to have a lower on-resistance when the current is on and can switch more efficiently, suitable for high-frequency and high-efficiency applications.
- **VDS (drain-source voltage)**: 650V
The maximum drain-source voltage of this MOSFET is **650V**, which enables it to adapt to high-voltage working environments and is often used in medium and high-voltage switching power supplies, power converters, inverters and other applications that need to withstand higher voltages.
- **VGS (gate-source voltage)**: ±30V
**VGS** supports **±30V** range, which provides flexible driving options and is compatible with most driving circuits, suitable for control systems with different voltage levels.
- **Vth (threshold voltage)**: 3.5V
**Vth (threshold voltage)** is **3.5V**, which means that the MOSFET can start to conduct at this voltage, which is suitable for compatibility with **3.3V** or **5V** logic level control circuits.
- **RDS(ON) (on-resistance)**: 2560mΩ @ VGS=10V
At **VGS=10V**, **RDS(ON)** is **2560mΩ**. The relatively high on-resistance means that the MOSFET will have some power loss under higher current conditions, but it can still work effectively in some low current applications.
- **ID (maximum continuous drain current)**: 4A
The maximum continuous drain current of this MOSFET is **4A**, which is suitable for applications with lower current carrying capacity and can operate stably in small and medium power power modules and motor drive circuits.
- **Technology**: Plannar
Manufactured using **Plannar** technology, this technology can provide lower on-resistance and more stable switching performance, suitable for use in medium power applications that require higher voltage and stable operation.
---
Domain and module applications：
**Application fields and module examples**
1. **Switching Power Supply (SMPS)**
**SW4N65DA-VB**'s high voltage tolerance (650V) makes it very suitable for the power conversion part of **Switching Power Supply (SMPS)**. Its higher on-resistance is suitable for low to medium power power modules, capable of handling medium current power conversion tasks. It is widely used in **AC-DC converters**, **DC-DC buck-boost converters**, etc.
2. **Motor drive**
In **motor control** systems, especially for small power motors such as **DC motors** or **stepper motors**, this MOSFET is suitable for the switching circuit of the motor drive. Despite the high on-resistance, it is still suitable for low to medium power motor control and can achieve efficient switching in low to medium power drive systems.
3. **Inverter**
In **solar inverter** or **wind inverter**, SW4N65DA-VB can be used as a switching element to help convert DC power into AC power. Although its on-resistance is relatively high, it is still suitable for medium-power inverter applications and can provide stable conversion efficiency under moderate power requirements.
4. **Battery Management System (BMS)**
**SW4N65DA-VB** can be used in **Battery Management System (BMS)** as an important switching element in the battery charging and discharging process. It can control the charging and discharging of the battery and prevent the battery from over-discharging or over-charging, ensuring the safety and stability of the battery system.
5. **Uninterruptible Power Supply (UPS)**
In **Uninterruptible Power Supply (UPS)** systems, SW4N65DA-VB can be used as a power switch to control the flow of power between the battery and the load, ensuring a stable power supply when the main power is lost. Suitable for low to medium power UPS systems, it can reduce costs while ensuring performance.
6. **Lighting Driver**
In **LED lighting driver circuits**, SW4N65DA-VB can be used to regulate current to ensure the efficiency of LED lights. Suitable for medium-power LED lighting systems, its high voltage and large current carrying capacity can meet the needs of high-efficiency lighting.
7. **Power Adapter and Charger**
**SW4N65DA-VB** can also be used in **power adapter** and **battery charger**, especially in applications that need to support higher voltages and relatively low currents. This MOSFET can effectively switch current to ensure stable operation of the power system.
8. **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC) circuit**, SW4N65DA-VB can be used as a switching element to help improve the power factor of the power supply. Although its on-resistance is high, it can effectively improve power efficiency and reduce current harmonics in the low to medium power range.
---
**SW4N65DA-VB** is suitable for medium and low power switching power supplies, motor control, inverters, LED drivers and other fields with its **650V** high voltage tolerance, moderate on-resistance and stable switching performance. MOSFET using **Plannar** technology provides better switching characteristics and stability, while improving efficiency, adapting to various voltage and current requirements.
1. **Switching Power Supply (SMPS)**
**SW4N65DA-VB**'s high voltage tolerance (650V) makes it very suitable for the power conversion part of **Switching Power Supply (SMPS)**. Its higher on-resistance is suitable for low to medium power power modules, capable of handling medium current power conversion tasks. It is widely used in **AC-DC converters**, **DC-DC buck-boost converters**, etc.
2. **Motor drive**
In **motor control** systems, especially for small power motors such as **DC motors** or **stepper motors**, this MOSFET is suitable for the switching circuit of the motor drive. Despite the high on-resistance, it is still suitable for low to medium power motor control and can achieve efficient switching in low to medium power drive systems.
3. **Inverter**
In **solar inverter** or **wind inverter**, SW4N65DA-VB can be used as a switching element to help convert DC power into AC power. Although its on-resistance is relatively high, it is still suitable for medium-power inverter applications and can provide stable conversion efficiency under moderate power requirements.
4. **Battery Management System (BMS)**
**SW4N65DA-VB** can be used in **Battery Management System (BMS)** as an important switching element in the battery charging and discharging process. It can control the charging and discharging of the battery and prevent the battery from over-discharging or over-charging, ensuring the safety and stability of the battery system.
5. **Uninterruptible Power Supply (UPS)**
In **Uninterruptible Power Supply (UPS)** systems, SW4N65DA-VB can be used as a power switch to control the flow of power between the battery and the load, ensuring a stable power supply when the main power is lost. Suitable for low to medium power UPS systems, it can reduce costs while ensuring performance.
6. **Lighting Driver**
In **LED lighting driver circuits**, SW4N65DA-VB can be used to regulate current to ensure the efficiency of LED lights. Suitable for medium-power LED lighting systems, its high voltage and large current carrying capacity can meet the needs of high-efficiency lighting.
7. **Power Adapter and Charger**
**SW4N65DA-VB** can also be used in **power adapter** and **battery charger**, especially in applications that need to support higher voltages and relatively low currents. This MOSFET can effectively switch current to ensure stable operation of the power system.
8. **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC) circuit**, SW4N65DA-VB can be used as a switching element to help improve the power factor of the power supply. Although its on-resistance is high, it can effectively improve power efficiency and reduce current harmonics in the low to medium power range.
---
**SW4N65DA-VB** is suitable for medium and low power switching power supplies, motor control, inverters, LED drivers and other fields with its **650V** high voltage tolerance, moderate on-resistance and stable switching performance. MOSFET using **Plannar** technology provides better switching characteristics and stability, while improving efficiency, adapting to various voltage and current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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