中文
English
SW4N60DC-VB TO251 Product details
Back to previous pageProduct introduction：
**
SW4N60DC-VB is a single N-channel MOSFET in TO251 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), suitable for medium-power switching applications. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 2200mΩ at VGS=10V, which is suitable for medium-power applications requiring relatively high current. The maximum leakage current (ID) of SW4N60DC-VB is 4A, and it uses planar technology (Plannar), which provides reliable current carrying capacity while ensuring good switching characteristics. Its high-voltage tolerance and stable performance make it widely used in various power management and switching power supply modules.
**
SW4N60DC-VB is a single N-channel MOSFET in TO251 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), suitable for medium-power switching applications. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 2200mΩ at VGS=10V, which is suitable for medium-power applications requiring relatively high current. The maximum leakage current (ID) of SW4N60DC-VB is 4A, and it uses planar technology (Plannar), which provides reliable current carrying capacity while ensuring good switching characteristics. Its high-voltage tolerance and stable performance make it widely used in various power management and switching power supply modules.
**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (VGS=10V)
- **ID**: 4A
- **Technology**: Plannar
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 2200mΩ (VGS=10V)
- **ID**: 4A
- **Technology**: Plannar
Domain and module applications：
SW4N60DC-VB is suitable for some application scenarios that require high voltage switching but not too high current requirements due to its high withstand voltage and stable conduction performance. For example, it can be widely used in switching power supplies (SMPS), low-power AC-DC power converters, simple motor control systems, electronic loads, and other high-voltage power modules. In these applications, SW4N60DC-VB can work stably at high voltages and is suitable for occasions that need to withstand a certain current. Its higher on-resistance makes it more suitable for medium-power systems that do not have very strict requirements on power loss. In addition, due to its packaging and power handling characteristics, SW4N60DC-VB is also suitable for power protection modules, lighting drive circuits and other fields in some electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
