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SW4N50K-VB TO252 Product details
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**SW4N50K-VB MOSFET Product Introduction**
**SW4N50K-VB** is an N-channel power MOSFET in a **TO252** package, designed for medium and high voltage applications. Its **VDS (drain-source voltage)** rating is **500V**, suitable for applications requiring higher voltage tolerance and high current carrying capacity. The **RDS(ON)** of the MOSFET is **550mΩ** at **VGS=10V**, with a moderate on-resistance, which can effectively reduce power loss and improve system efficiency. Its **Vth (threshold voltage)** is **3.5V**, making it compatible with most low-voltage logic drive signals and easy to integrate into a variety of control circuits. Using **SJ_Multi-EPI** technology, this MOSFET provides lower on-resistance and faster switching characteristics, suitable for high-efficiency, high-power power management, motor control and power conversion applications.
**SW4N50K-VB** is an N-channel power MOSFET in a **TO252** package, designed for medium and high voltage applications. Its **VDS (drain-source voltage)** rating is **500V**, suitable for applications requiring higher voltage tolerance and high current carrying capacity. The **RDS(ON)** of the MOSFET is **550mΩ** at **VGS=10V**, with a moderate on-resistance, which can effectively reduce power loss and improve system efficiency. Its **Vth (threshold voltage)** is **3.5V**, making it compatible with most low-voltage logic drive signals and easy to integrate into a variety of control circuits. Using **SJ_Multi-EPI** technology, this MOSFET provides lower on-resistance and faster switching characteristics, suitable for high-efficiency, high-power power management, motor control and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
- **Package**: TO252
The TO252 package is a common medium-power package with good thermal performance and compact size, suitable for space-constrained high-efficiency applications such as power modules and small motor drive circuits.
- **Configuration**: Single N-channel
The single N-channel MOSFET configuration enables the device to provide low on-resistance and high switching efficiency, suitable for use in power conversion and power management systems.
- **VDS (drain-source voltage)**: 500V
The maximum drain-source voltage of this MOSFET is **500V**, suitable for medium and high voltage applications such as switching power supplies, power converters, inverters, etc.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports **±30V** gate-source voltage, which is compatible with most control circuits and provides flexible drive options.
- **Vth (threshold voltage)**: 3.5V
The threshold voltage of 3.5V enables the MOSFET to start at a lower control voltage, which is suitable for compatibility with low-voltage drive circuits.
- **RDS(ON) (on-resistance)**: 550mΩ @ VGS=10V
At **VGS=10V**, the on-resistance of the MOSFET is **550mΩ**. The moderate on-resistance helps to control power loss while carrying a large current, which is suitable for medium-power applications.
- **ID (maximum continuous drain current)**: 7A
The maximum continuous drain current of this MOSFET is **7A**, which can carry moderate current and is suitable for applications that require a certain current capacity.
- **Technology**: SJ_Multi-EPI
Using **SJ_Multi-EPI** (Super Junction Multi-Epi) technology, the on-resistance and switching performance are optimized, providing higher efficiency and lower switching losses, suitable for high-performance applications.
---
- **Package**: TO252
The TO252 package is a common medium-power package with good thermal performance and compact size, suitable for space-constrained high-efficiency applications such as power modules and small motor drive circuits.
- **Configuration**: Single N-channel
The single N-channel MOSFET configuration enables the device to provide low on-resistance and high switching efficiency, suitable for use in power conversion and power management systems.
- **VDS (drain-source voltage)**: 500V
The maximum drain-source voltage of this MOSFET is **500V**, suitable for medium and high voltage applications such as switching power supplies, power converters, inverters, etc.
- **VGS (gate-source voltage)**: ±30V
The MOSFET supports **±30V** gate-source voltage, which is compatible with most control circuits and provides flexible drive options.
- **Vth (threshold voltage)**: 3.5V
The threshold voltage of 3.5V enables the MOSFET to start at a lower control voltage, which is suitable for compatibility with low-voltage drive circuits.
- **RDS(ON) (on-resistance)**: 550mΩ @ VGS=10V
At **VGS=10V**, the on-resistance of the MOSFET is **550mΩ**. The moderate on-resistance helps to control power loss while carrying a large current, which is suitable for medium-power applications.
- **ID (maximum continuous drain current)**: 7A
The maximum continuous drain current of this MOSFET is **7A**, which can carry moderate current and is suitable for applications that require a certain current capacity.
- **Technology**: SJ_Multi-EPI
Using **SJ_Multi-EPI** (Super Junction Multi-Epi) technology, the on-resistance and switching performance are optimized, providing higher efficiency and lower switching losses, suitable for high-performance applications.
---
Domain and module applications：
**Application fields and module examples**
1. **Switching power supply (SMPS)**
**SW4N50K-VB** is very suitable for the power conversion part of **Switching power supply (SMPS)** due to its **500V** high voltage tolerance and moderate on-resistance. MOSFET can be used as a switching element in DC-DC boost, buck converter, or **AC-DC converter**, effectively improving energy conversion efficiency and reducing power loss.
2. **Motor control and drive**
In **industrial motor control**, SW4N50K-VB can be used in **motor drive circuits**, especially in medium-power motor applications, such as **stepper motor** or **brushless DC motor (BLDC)** control systems. This MOSFET can withstand medium currents and provide good efficiency and reliability at high-speed switching.
3. **Inverter Application**
In **Solar Inverter** or **Wind Inverter**, SW4N50K-VB can be used to convert DC to AC. Its high voltage capability (500V) enables it to handle the higher DC voltage from solar panels or wind turbines and efficiently convert it to AC, ensuring high efficiency and reliability of the system.
4. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, SW4N50K-VB can be used as a power switch to manage the battery charge and discharge process. It can control the battery charge and discharge current and prevent the battery from overcharging and over-discharging, thereby extending the battery life and ensuring battery safety.
5. **Electric Vehicle (EV) Charging System**
In **Electric Vehicle (EV) Charging System**, SW4N50K-VB can be used in the battery charging module. Its high voltage and moderate current capability enable it to handle charging current stably, ensuring that electric vehicles can be charged quickly and safely.
6. **Uninterruptible Power Supply (UPS)**
In an **Uninterruptible Power Supply (UPS)** system, the SW4N50K-VB MOSFET can be used as a power switching element to manage the flow of power between the battery and the load, ensuring backup power when the main power is lost. Its high voltage and current carrying capacity are very suitable for high-power UPS systems.
7. **LED Lighting Driver**
In an **LED drive circuit**, the SW4N50K-VB can be used as a switching element to control the current of the LED, ensuring efficient operation of the LED lighting system. This MOSFET is suitable for high-efficiency lighting applications, providing sufficient current to drive the LED while reducing power consumption.
8. **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC)** circuits, SW4N50K-VB can be used to improve the power factor of the power supply and reduce harmonics and current fluctuations. Due to its high voltage tolerance and good switching performance, SW4N50K-VB can provide efficient switching operation in the power factor correction module and optimize the operating efficiency of the power supply.
---
**SW4N50K-VB** is very suitable for medium and high power switching power supplies, motor control, battery management, inverters, LED drivers and other high-efficiency power conversion applications with its **500V** drain-source voltage, moderate on-resistance and high current carrying capacity. Its **SJ_Multi-EPI** technology provides excellent switching performance and thermal stability, making it efficient and reliable in a variety of applications.
1. **Switching power supply (SMPS)**
**SW4N50K-VB** is very suitable for the power conversion part of **Switching power supply (SMPS)** due to its **500V** high voltage tolerance and moderate on-resistance. MOSFET can be used as a switching element in DC-DC boost, buck converter, or **AC-DC converter**, effectively improving energy conversion efficiency and reducing power loss.
2. **Motor control and drive**
In **industrial motor control**, SW4N50K-VB can be used in **motor drive circuits**, especially in medium-power motor applications, such as **stepper motor** or **brushless DC motor (BLDC)** control systems. This MOSFET can withstand medium currents and provide good efficiency and reliability at high-speed switching.
3. **Inverter Application**
In **Solar Inverter** or **Wind Inverter**, SW4N50K-VB can be used to convert DC to AC. Its high voltage capability (500V) enables it to handle the higher DC voltage from solar panels or wind turbines and efficiently convert it to AC, ensuring high efficiency and reliability of the system.
4. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, SW4N50K-VB can be used as a power switch to manage the battery charge and discharge process. It can control the battery charge and discharge current and prevent the battery from overcharging and over-discharging, thereby extending the battery life and ensuring battery safety.
5. **Electric Vehicle (EV) Charging System**
In **Electric Vehicle (EV) Charging System**, SW4N50K-VB can be used in the battery charging module. Its high voltage and moderate current capability enable it to handle charging current stably, ensuring that electric vehicles can be charged quickly and safely.
6. **Uninterruptible Power Supply (UPS)**
In an **Uninterruptible Power Supply (UPS)** system, the SW4N50K-VB MOSFET can be used as a power switching element to manage the flow of power between the battery and the load, ensuring backup power when the main power is lost. Its high voltage and current carrying capacity are very suitable for high-power UPS systems.
7. **LED Lighting Driver**
In an **LED drive circuit**, the SW4N50K-VB can be used as a switching element to control the current of the LED, ensuring efficient operation of the LED lighting system. This MOSFET is suitable for high-efficiency lighting applications, providing sufficient current to drive the LED while reducing power consumption.
8. **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC)** circuits, SW4N50K-VB can be used to improve the power factor of the power supply and reduce harmonics and current fluctuations. Due to its high voltage tolerance and good switching performance, SW4N50K-VB can provide efficient switching operation in the power factor correction module and optimize the operating efficiency of the power supply.
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**SW4N50K-VB** is very suitable for medium and high power switching power supplies, motor control, battery management, inverters, LED drivers and other high-efficiency power conversion applications with its **500V** drain-source voltage, moderate on-resistance and high current carrying capacity. Its **SJ_Multi-EPI** technology provides excellent switching performance and thermal stability, making it efficient and reliable in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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