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SW47N65K-VB Product details
Back to previous pageProduct introduction：
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SW47N65K-VB is a high-performance single N-channel MOSFET in TO247 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), suitable for high voltage and high current switching applications. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 75mΩ at VGS=10V, with excellent conductivity and low switching loss. The maximum drain current (ID) of SW47N65K-VB is 47A, and it adopts advanced SJ_Multi-EPI technology, which makes the MOSFET have higher current carrying capacity and lower conduction loss. This product is very suitable for high voltage, low loss power conversion applications, and is widely used in various power modules, switching power supplies, converters and other fields.
**
SW47N65K-VB is a high-performance single N-channel MOSFET in TO247 package with 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS), suitable for high voltage and high current switching applications. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 75mΩ at VGS=10V, with excellent conductivity and low switching loss. The maximum drain current (ID) of SW47N65K-VB is 47A, and it adopts advanced SJ_Multi-EPI technology, which makes the MOSFET have higher current carrying capacity and lower conduction loss. This product is very suitable for high voltage, low loss power conversion applications, and is widely used in various power modules, switching power supplies, converters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 75mΩ (VGS=10V)
- **ID**: 47A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 75mΩ (VGS=10V)
- **ID**: 47A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
SW47N65K-VB MOSFET is particularly suitable for high-power switching applications due to its high voltage and high current handling capabilities. For example, it can be used in DC-DC converters, AC-DC converters and inverters, especially in power electronics, renewable energy systems (such as solar and wind power), SW47N65K-VB can work stably at high voltages to ensure efficient energy conversion. It can also be used in areas such as charging management systems, power supplies, motor drives, and UPS (uninterruptible power supply) systems for electric vehicles. Due to its low on-resistance and high efficiency, SW47N65K-VB performs well in power supply designs that require high performance and low loss, and is particularly suitable for industrial and commercial applications that require long-term stable operation in high-voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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