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SW47N60K-VB Product details
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**SW47N60K-VB MOSFET Product Introduction**
**SW47N60K-VB** is a high-performance N-channel MOSFET in a **TO247** package, designed for medium-to-high voltage, high-current switching applications. Its **VDS (drain-source voltage)** is up to **600V**, suitable for high-voltage environments such as power electronics, industrial motor control, and power management. The **RDS(ON)** of the MOSFET is **60mΩ** at **VGS=10V**, with a lower on-resistance, thereby reducing power loss and improving overall efficiency. The **Vth (threshold voltage)** of the device is **3.5V**, which is compatible with most low-voltage logic drive signals. Using **SJ_Multi-EPI** technology, it provides lower conduction losses and faster switching characteristics, suitable for applications requiring high performance and high reliability.
**SW47N60K-VB** is a high-performance N-channel MOSFET in a **TO247** package, designed for medium-to-high voltage, high-current switching applications. Its **VDS (drain-source voltage)** is up to **600V**, suitable for high-voltage environments such as power electronics, industrial motor control, and power management. The **RDS(ON)** of the MOSFET is **60mΩ** at **VGS=10V**, with a lower on-resistance, thereby reducing power loss and improving overall efficiency. The **Vth (threshold voltage)** of the device is **3.5V**, which is compatible with most low-voltage logic drive signals. Using **SJ_Multi-EPI** technology, it provides lower conduction losses and faster switching characteristics, suitable for applications requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
**Detailed parameter description**
- **Package**: TO247
The TO247 package is a common high-power package suitable for applications that require high power handling capabilities and good heat dissipation performance, especially power supplies and drive systems that require high voltage resistance.
- **Configuration**: Single N-channel
The single N-channel MOSFET is configured as a high-efficiency switching element with low on-resistance and excellent switching performance, suitable for power conversion, switching power supplies and motor drives.
- **VDS (drain-source voltage)**: 600V
The maximum drain-source voltage of this MOSFET is **600V**, which is suitable for medium and high voltage power conversion and motor control applications and can handle large voltage stress.
- **VGS (gate-source voltage)**: ±30V
**SW47N60K-VB** supports **±30V** gate-source voltage, which is compatible with most control circuits and provides flexible drive options.
- **Vth (threshold voltage)**: 3.5V
With a threshold voltage of **3.5V**, this MOSFET can start working at a lower gate voltage and is suitable for use with a variety of logic level control signals.
- **RDS(ON) (on resistance)**: 60mΩ @ VGS=10V
At **VGS=10V**, the on resistance is **60mΩ**, and the low on resistance helps reduce power loss and improve overall working efficiency.
- **ID (maximum continuous leakage current)**: 47A
The maximum continuous leakage current of this MOSFET is **47A**, which can carry large current and is suitable for high power load applications.
- **Technology**: SJ_Multi-EPI
Using **SJ_Multi-EPI** (Super Junction Multi-Epi) technology, the on-resistance and switching loss are reduced, the overall power conversion efficiency and thermal stability are improved, and it is suitable for high-efficiency and high-power applications.
---
- **Package**: TO247
The TO247 package is a common high-power package suitable for applications that require high power handling capabilities and good heat dissipation performance, especially power supplies and drive systems that require high voltage resistance.
- **Configuration**: Single N-channel
The single N-channel MOSFET is configured as a high-efficiency switching element with low on-resistance and excellent switching performance, suitable for power conversion, switching power supplies and motor drives.
- **VDS (drain-source voltage)**: 600V
The maximum drain-source voltage of this MOSFET is **600V**, which is suitable for medium and high voltage power conversion and motor control applications and can handle large voltage stress.
- **VGS (gate-source voltage)**: ±30V
**SW47N60K-VB** supports **±30V** gate-source voltage, which is compatible with most control circuits and provides flexible drive options.
- **Vth (threshold voltage)**: 3.5V
With a threshold voltage of **3.5V**, this MOSFET can start working at a lower gate voltage and is suitable for use with a variety of logic level control signals.
- **RDS(ON) (on resistance)**: 60mΩ @ VGS=10V
At **VGS=10V**, the on resistance is **60mΩ**, and the low on resistance helps reduce power loss and improve overall working efficiency.
- **ID (maximum continuous leakage current)**: 47A
The maximum continuous leakage current of this MOSFET is **47A**, which can carry large current and is suitable for high power load applications.
- **Technology**: SJ_Multi-EPI
Using **SJ_Multi-EPI** (Super Junction Multi-Epi) technology, the on-resistance and switching loss are reduced, the overall power conversion efficiency and thermal stability are improved, and it is suitable for high-efficiency and high-power applications.
---
Domain and module applications：
**Application fields and module examples**
1. **High-efficiency switching power supply (SMPS)**
**SW47N60K-VB** is very suitable for the power conversion part of **switching power supply (SMPS)** due to its high voltage (600V) and low on-resistance. In these applications, MOSFET is used as a switching element for DC-AC conversion, DC-DC boost or buck, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **Motor drive and industrial control**
In **industrial motor control** systems, **SW47N60K-VB** is used as a switching element in **motor drive circuits**, such as in **brushless DC motors (BLDC)** or **stepper motor drivers**. This MOSFET can handle large currents (up to 47A) and is suitable for precise speed regulation and control of high-power motors.
3. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, SW47N60K-VB can be used as a power switch for battery charge and discharge control. Its high voltage and high current carrying capacity make it ideal for use in battery protection circuits, ensuring that the battery is not damaged by overcharge or overdischarge, extending the battery life.
4. **Solar Inverter**
**SW47N60K-VB** is widely used in **Solar Inverter**, especially in systems that convert solar energy into usable AC power. The high voltage rating (600V) of this MOSFET enables it to withstand the high voltage DC output from the solar panel and efficiently convert it to AC power, optimizing the output efficiency of the solar cell.
5. **Electric Vehicle (EV) Charging System**
In **Electric Vehicle (EV) Charging System**, SW47N60K-VB can be used in the power conversion module during the battery charging process. This MOSFET can effectively handle high current and high voltage input, ensuring stable power transmission during charging, improving charging efficiency and safety.
6. **Uninterruptible Power Supply (UPS)**
**SW47N60K-VB** As a switching element, it plays an important role in the **Uninterruptible Power Supply (UPS)** system. It can ensure that when the power is cut off, the UPS system can quickly switch to the backup power supply and provide stable power output to ensure the continuous operation of the system. Due to its high current and high voltage handling capabilities, it is suitable for high-power UPS systems.
7. **LED drive and lighting system**
In the **LED drive circuit**, SW47N60K-VB can be used as a power switch to adjust the current of LED lighting to achieve constant current drive. The high efficiency and low power consumption characteristics of this MOSFET make it very suitable for high-efficiency LED lighting applications.
8. **Power Inverter**
In **power inverter**, SW47N60K-VB MOSFET can be used for **DC-AC conversion**, such as DC to AC conversion in AC power systems, welding power supplies or communication equipment. Its high voltage and high current handling capabilities enable stable and efficient power conversion.
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**SW47N60K-VB**'s **600V** drain-source voltage and **47A** drain current carrying capacity make it suitable for a variety of switching power supplies, battery management, industrial control and energy conversion applications that require high power and high efficiency. By adopting **SJ_Multi-EPI** technology, this MOSFET provides excellent switching performance and thermal stability to meet the high efficiency and reliability requirements of modern high-power electronic devices.
1. **High-efficiency switching power supply (SMPS)**
**SW47N60K-VB** is very suitable for the power conversion part of **switching power supply (SMPS)** due to its high voltage (600V) and low on-resistance. In these applications, MOSFET is used as a switching element for DC-AC conversion, DC-DC boost or buck, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **Motor drive and industrial control**
In **industrial motor control** systems, **SW47N60K-VB** is used as a switching element in **motor drive circuits**, such as in **brushless DC motors (BLDC)** or **stepper motor drivers**. This MOSFET can handle large currents (up to 47A) and is suitable for precise speed regulation and control of high-power motors.
3. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, SW47N60K-VB can be used as a power switch for battery charge and discharge control. Its high voltage and high current carrying capacity make it ideal for use in battery protection circuits, ensuring that the battery is not damaged by overcharge or overdischarge, extending the battery life.
4. **Solar Inverter**
**SW47N60K-VB** is widely used in **Solar Inverter**, especially in systems that convert solar energy into usable AC power. The high voltage rating (600V) of this MOSFET enables it to withstand the high voltage DC output from the solar panel and efficiently convert it to AC power, optimizing the output efficiency of the solar cell.
5. **Electric Vehicle (EV) Charging System**
In **Electric Vehicle (EV) Charging System**, SW47N60K-VB can be used in the power conversion module during the battery charging process. This MOSFET can effectively handle high current and high voltage input, ensuring stable power transmission during charging, improving charging efficiency and safety.
6. **Uninterruptible Power Supply (UPS)**
**SW47N60K-VB** As a switching element, it plays an important role in the **Uninterruptible Power Supply (UPS)** system. It can ensure that when the power is cut off, the UPS system can quickly switch to the backup power supply and provide stable power output to ensure the continuous operation of the system. Due to its high current and high voltage handling capabilities, it is suitable for high-power UPS systems.
7. **LED drive and lighting system**
In the **LED drive circuit**, SW47N60K-VB can be used as a power switch to adjust the current of LED lighting to achieve constant current drive. The high efficiency and low power consumption characteristics of this MOSFET make it very suitable for high-efficiency LED lighting applications.
8. **Power Inverter**
In **power inverter**, SW47N60K-VB MOSFET can be used for **DC-AC conversion**, such as DC to AC conversion in AC power systems, welding power supplies or communication equipment. Its high voltage and high current handling capabilities enable stable and efficient power conversion.
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**SW47N60K-VB**'s **600V** drain-source voltage and **47A** drain current carrying capacity make it suitable for a variety of switching power supplies, battery management, industrial control and energy conversion applications that require high power and high efficiency. By adopting **SJ_Multi-EPI** technology, this MOSFET provides excellent switching performance and thermal stability to meet the high efficiency and reliability requirements of modern high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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